Resistive Switching: From Fundamentals of Nanoionic Redox Processes to Memristive Device Applications（Hardcover）
暫譯: 電阻切換：從奈米離子還原過程的基本原理到記憶體元件應用（精裝本）
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商品描述
With its comprehensive coverage, this reference introduces readers to the wide topic of resistance switching, providing the knowledge, tools, and methods needed to understand, characterize and apply resistive switching memories.
Starting with those materials that display resistive switching behavior, the book explains the basics of resistive switching as well as switching mechanisms and models. An in-depth discussion of memory reliability is followed by chapters on memory cell structures and architectures, while a section on logic gates rounds off the text.
An invaluable self-contained book for materials scientists, electrical engineers and physicists dealing with memory research and development.
Starting with those materials that display resistive switching behavior, the book explains the basics of resistive switching as well as switching mechanisms and models. An in-depth discussion of memory reliability is followed by chapters on memory cell structures and architectures, while a section on logic gates rounds off the text.
An invaluable self-contained book for materials scientists, electrical engineers and physicists dealing with memory research and development.
商品描述(中文翻譯)
這本參考書全面涵蓋了電阻切換的廣泛主題，為讀者提供了理解、特徵化和應用電阻切換記憶體所需的知識、工具和方法。書中首先介紹了顯示電阻切換行為的材料，接著解釋了電阻切換的基本概念以及切換機制和模型。隨後深入討論了記憶體的可靠性，並包含有關記憶體單元結構和架構的章節，最後以邏輯閘的部分作為結尾。這是一本對於從事記憶體研究和開發的材料科學家、電機工程師和物理學家來說，極具價值的獨立書籍。
