3D Flash Memories
暫譯: 3D 快閃記憶體

  • 出版商: Springer
  • 出版日期: 2018-06-07
  • 售價: $6,150
  • 貴賓價: 9.5$5,843
  • 語言: 英文
  • 頁數: 404
  • 裝訂: Paperback
  • ISBN: 9402413650
  • ISBN-13: 9789402413656
  • 海外代購書籍(需單獨結帳)

商品描述

This book walks the reader through the next step in the evolution of NAND flash memory technology, namely the development of 3D flash memories, in which multiple layers of memory cells are grown within the same piece of silicon.  It describes their working principles, device architectures, fabrication techniques and practical implementations, and highlights why 3D flash is a brand new technology.

After reviewing market trends for both NAND and solid state drives (SSDs), the book digs into the details of the flash memory cell itself, covering both floating gate and emerging charge trap technologies. There is a plethora of different materials and vertical integration schemes out there. New memory cells, new materials, new architectures (3D Stacked, BiCS and P-BiCS, 3D FG, 3D VG, 3D advanced architectures); basically, each NAND manufacturer has its own solution. Chapter 3 to chapter 7 offer a broad overview of how 3D can materialize. The 3D wave is impacting emerging memories as well and chapter 8 covers 3D RRAM (resistive RAM) crosspoint arrays. Visualizing 3D structures can be a challenge for the human brain: this is way all these chapters contain a lot of bird’s-eye views and cross sections along the 3 axes.

The second part of the book is devoted to other important aspects, such as advanced packaging technology (i.e. TSV in chapter 9) and error correction codes, which have been leveraged to improve flash reliability for decades.  Chapter 10 describes the evolution from legacy BCH to the most recent LDPC codes, while chapter 11 deals with some of the most recent advancements in the ECC field. Last but not least, chapter 12 looks at 3D flash memories from a system perspective.

Is 14nm the last step for planar cells? Can 100 layers be integrated within the same piece of silicon? Is 4 bit/cell possible with 3D? Will 3D be reliable enough for enterprise and datacenter applications? These are some of the questions that this book helps answering by providing insights into 3D flash memory design, process technology and applications.

商品描述(中文翻譯)

這本書引導讀者了解NAND快閃記憶體技術的下一步演進,即3D快閃記憶體的發展,其中多層記憶體單元在同一片矽晶片上生長。它描述了這些技術的工作原理、裝置架構、製造技術和實際應用,並強調為什麼3D快閃記憶體是一項全新的技術。

在回顧NAND和固態硬碟(SSDs)的市場趨勢後,這本書深入探討了快閃記憶體單元的細節,涵蓋了浮動閘極和新興的電荷陷阱技術。市面上有各種不同的材料和垂直整合方案。新的記憶體單元、新的材料、新的架構(3D堆疊、BiCS和P-BiCS、3D FG、3D VG、3D先進架構);基本上,每個NAND製造商都有自己的解決方案。第三章到第七章提供了3D實現的廣泛概述。3D浪潮也影響了新興記憶體,第八章涵蓋了3D RRAM(電阻式隨機存取記憶體)交叉點陣列。可視化3D結構對人腦來說可能是一個挑戰,因此這些章節包含了大量的鳥瞰圖和沿三個軸的橫截面圖。

本書的第二部分專注於其他重要方面,例如先進封裝技術(即第九章的TSV)和錯誤更正碼,這些技術已被利用來提高快閃記憶體的可靠性數十年。第十章描述了從傳統BCH到最新的LDPC碼的演變,而第十一章則處理ECC領域的一些最新進展。最後,第十二章從系統的角度探討3D快閃記憶體。

14nm是平面單元的最後一步嗎?是否可以在同一片矽晶片上整合100層?3D是否能實現每個單元4位元?3D是否足夠可靠以應用於企業和數據中心?這些是本書幫助回答的一些問題,通過提供對3D快閃記憶體設計、製程技術和應用的見解。