Charge-Trapping Non-Volatile Memories: Volume 2--Emerging Materials and Structures
暫譯: 電荷捕獲非揮發性記憶體:第二卷—新興材料與結構
- 出版商: Springer
- 出版日期: 2017-02-22
- 售價: $4,480
- 貴賓價: 9.5 折 $4,256
- 語言: 英文
- 頁數: 211
- 裝訂: Hardcover
- ISBN: 3319487035
- ISBN-13: 9783319487038
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商品描述
This book describes the technology of charge-trapping non-volatile memories and their uses. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved and the fundamental properties of the technology. Modern material properties, used as charge-trapping layers, for new applications are introduced.
- Provides a comprehensive overview of the technology for charge-trapping non-volatile memories;
- Details new architectures and current modeling concepts for non-volatile memory devices;
- Focuses on conduction through multi-layer gate dielectrics stacks.
商品描述(中文翻譯)
本書描述了電荷捕獲非揮發性記憶體的技術及其應用。作者解釋了每種裝置架構的裝置物理,並具體描述了所涉及的材料及該技術的基本特性。介紹了用作電荷捕獲層的現代材料特性,以應用於新用途。
- 提供電荷捕獲非揮發性記憶體技術的全面概述;
- 詳細介紹非揮發性記憶體裝置的新架構和當前建模概念;
- 專注於多層閘介電層堆疊中的導電性。