Modeling and Characterization of RF and Microwave Power FETs
暫譯: 射頻與微波功率FET的建模與特性分析
Peter Aaen, Jaime A. Plá, John Wood
- 出版商: Cambridge
- 出版日期: 2007-06-25
- 售價: $1,350
- 貴賓價: 9.8 折 $1,323
- 語言: 英文
- 頁數: 380
- 裝訂: Hardcover
- ISBN: 0521870666
- ISBN-13: 9780521870665
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相關分類:
微波工程 Microwave
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商品描述
Description
This is a book about the compact modeling of RF power FETs. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this is the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices. This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. All three authors work in the RF Division at Freescale Semiconductor, Inc., in Tempe Arizona. Peter H. Aaen is Modeling Group Manager, Jaime A. Plá is Design Organization Manager, and John Wood is Senior Technical Contributor responsible for RF CAD and Modeling, and a Fellow of the IEEE.
• First book to cover high-power LDMOS in detail, including modeling techniques • Describes fundamental techniques and approaches to FET device modeling in general • Practical guide to how best to use models, for the RF power amplifier designer
Table of Contents
1. RF and microwave power transistors; 2.An introduction to the compact modeling of high power FETs; 3. Electrical measurement techniques; 4. Passive components: simulation and modeling; 5. Thermal characterization and modeling; 6. Modeling the active transistor; 7. Function approximation for compact modeling; 8. Model implementation in CAD tools; 9. Model validation; About the authors; Index.
商品描述(中文翻譯)
**描述**
這是一本關於射頻功率場效應晶體管(RF power FETs)緊湊模型的書籍。在書中,您將找到特性化和測量技術、分析方法,以及模擬器實現、模型驗證和驗證程序的描述,這些都是為了產生一個可以讓電路設計師有信心使用的晶體管模型。這本書由在LDMOS和III-V技術方面擁有多年設備建模經驗的半導體行業專業人士撰寫,是第一本針對高功率RF晶體管特定建模需求的書籍。書中描述了一種與技術無關的方法,涉及熱效應、縮放問題、非線性建模和封裝內匹配網路。這些內容使用當前市場領先的高功率RF技術LDMOS以及III-V功率設備進行說明。本書是FET建模的全面闡述,對於RF和微波功率放大器設計及建模社群中的資深專業人士和新畢業生來說,都是必備的資源。三位作者均在位於亞利桑那州坦佩的Freescale Semiconductor, Inc.的RF部門工作。Peter H. Aaen是建模小組經理,Jaime A. Plá是設計組織經理,John Wood是負責RF CAD和建模的高級技術貢獻者,並且是IEEE的會士。
- 第一本詳細介紹高功率LDMOS的書籍,包括建模技術
- 描述FET設備建模的一般基本技術和方法
- 實用指南,幫助RF功率放大器設計師最佳使用模型
**目錄**
1. 射頻和微波功率晶體管;2. 高功率FET的緊湊建模介紹;3. 電氣測量技術;4. 被動元件:模擬和建模;5. 熱特性化和建模;6. 主動晶體管建模;7. 緊湊建模的函數近似;8. CAD工具中的模型實現;9. 模型驗證;關於作者;索引。