Radio Frequency Transistors: Principles and Practical Applications
暫譯: 射頻晶體管:原理與實際應用
Norman Dye, Helge Granberg
- 出版商: Newnes
- 出版日期: 2001-01-23
- 售價: $980
- 語言: 英文
- 頁數: 320
- 裝訂: Paperback
- ISBN: 0750672811
- ISBN-13: 9780750672818
已絕版
買這商品的人也買了...
-
$970Introduction to Algorithms, 2/e
-
$920$727 -
$750$638 -
$690$538 -
$720$569 -
$880$792 -
$1,530$1,454 -
$750$638 -
$945Head First EJB: Passing the Sun Certified Business Component Developer Exam
-
$720$569 -
$560$476 -
$650$553 -
$390$304 -
$490$417 -
$650$553 -
$450$351 -
$850$723 -
$280$218 -
$480$379 -
$750$593 -
$720$569 -
$780$616 -
$390$332 -
$580$493 -
$2,275$2,161
相關主題
商品描述
Radio Frequency Transistors: Principles and Practical Applications is a
complete tool kit for successful RF circuit design. As cellular and satellite
communications fields continue to expand, the need for RF circuit design grows.
Radio Frequency Transistors contains a wealth of practical design information
based on years of experience from authors who have worked with the leading
manufacturers of RF components. The book focuses primarily on the more difficult
area of high power transistor amplifier design and
construction.
An entire chapter devoted solely to LDMOS high
power RF transistors has been added to the new edition. A comparison is given
between LDMOS FETs, TMOS FETs and bipolar transistors, showing clearly why LDMOS
is the designer's choice for high power, linear amplifiers in today's rapidly
expanding digital world of communications. Coverage also includes applications
of LDMOS RF high power transistors in current generation cellular technologies,
the design of LDMOS high power amplifiers, and comments about the latest efforts
to model LDMOS RF power devices.
Other topics covered include the
selection of matched high power RF transistors, input impedance matching of high
power transistors, interstage matching, and capacitors and inductors at radio
frequencies
Contents
Understanding RF data sheet parameters; DC specifications; Functional characteristics for power transistors, low power transistors, linear modules, and power modules; RF transistor fundamentals; Transistor characteristics in specific applications; Bandwidth considerations; MOSFETs vs. bipolars; FETs and BJTs; types of transistors; Comparing parameters; Circuit configurations; Common emitter and common source; Common Base and common gate; Common collector and common drain; Classes of operation; Forms of modulation; Operating transistors in pulse mode; Reliability considerations; Construction techniques; Types of packages; Emitter/source inductance; Laying out a circuit board; Tips for systematic PC layout design; Mounting RF devices; RF modules; Power amplifier design; Single-ended RF amplifier designs; Parallel transistor amplifiers; MOSFETs; Push-pull amplifiers; Computer-aided design programs; Circuit testing; Types of low-pass filters; Wideband impedance matching; Conventional transformers; Twisted wire transformers; Transmission line transformers; Equal delay transmission line transformers; Power splitting and combining; Basic types of power combiners; In phase and 180 degree combiners; 90 degree hybrids; Line hybrids; Ring hybrids; Branch line couplers; Wilkinson couplers; Frequency compensation and negative feedback; LDMOS high power transistors; Differences between LDMOS high power transistors and bipolars; Differences between LDMOS high power transistors and TMOS FETs; Designing high power RF amplifiers using LDMOS; Small signal amplifier design; Scattering parameters; Noise parameters; Biasing considerations; Power gain; Stability; Actual steps in low power amplifier design; and much more
商品描述(中文翻譯)
無線頻率晶體管:原理與實用應用是成功的無線頻率電路設計的完整工具包。隨著行動通信和衛星通信領域的持續擴展,對無線頻率電路設計的需求也在增長。《無線頻率晶體管》包含了大量基於多年與無線頻率元件主要製造商合作經驗的實用設計資訊。本書主要集中於高功率晶體管放大器設計與建造的較困難領域。
新版本中新增了一整章專門討論LDMOS高功率無線頻率晶體管。書中對LDMOS FET、TMOS FET和雙極晶體管進行了比較,清楚地顯示出為何LDMOS是設計師在當今快速擴展的數位通信世界中選擇高功率線性放大器的首選。內容還包括LDMOS高功率無線頻率晶體管在當前一代行動技術中的應用、LDMOS高功率放大器的設計,以及對最新LDMOS無線頻率功率元件建模努力的評論。
其他涵蓋的主題包括匹配高功率無線頻率晶體管的選擇、高功率晶體管的輸入阻抗匹配、級間匹配,以及無線頻率下的電容器和電感器。
**內容**
理解無線頻率數據表參數;直流規格;功率晶體管、低功率晶體管、線性模組和功率模組的功能特性;無線頻率晶體管基礎;特定應用中的晶體管特性;帶寬考量;MOSFET與雙極晶體管的比較;FET與BJT;晶體管類型;參數比較;電路配置;共發射極和共源極;共基極和共閘極;共集極和共漏極;操作類別;調變形式;脈衝模式下的晶體管操作;可靠性考量;建造技術;封裝類型;發射極/源極電感;電路板佈局;系統化PC佈局設計的提示;安裝無線頻率設備;無線頻率模組;功率放大器設計;單端無線頻率放大器設計;並聯晶體管放大器;MOSFET;推拉放大器;計算機輔助設計程序;電路測試;低通濾波器類型;寬頻阻抗匹配;傳統變壓器;扭絞線變壓器;傳輸線變壓器;等延遲傳輸線變壓器;功率分配與合併;基本功率合併器類型;同相與180度合併器;90度混合器;線性混合器;環形混合器;分支線耦合器;Wilkinson耦合器;頻率補償與負反饋;LDMOS高功率晶體管;LDMOS高功率晶體管與雙極晶體管的差異;LDMOS高功率晶體管與TMOS FET的差異;使用LDMOS設計高功率無線頻率放大器;小信號放大器設計;散射參數;噪聲參數;偏置考量;功率增益;穩定性;低功率放大器設計的實際步驟;以及更多內容。