Circuit Design for Modern Applications
暫譯: 現代應用的電路設計

Roobert, A. Andrew, Venkatesh, M., Rahi, Shiromani Balmukund

Circuit Design for Modern Applications
  • 出版商: CRC
  • 出版日期: 2025-02-05
  • 售價: $6,450
  • 貴賓價: 9.5 折 $6,128
  • 語言: 英文
  • 頁數: 388
  • 裝訂: Hardcover - also called cloth, retail trade, or trade
  • ISBN: 1032774312
  • ISBN-13: 9781032774312

    • 海外代購書籍(需單獨結帳)

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商品描述

This book offers a clear exploration of cutting-edge semiconductor circuit technologies and their practical applications. It covers topics like advanced transistor design, low-power consumption techniques, and high-performance circuit design.

Circuit Design for Modern Applications explores the recent innovations in semiconductor technology. Bandgap reference circuits, quad model transistors, voltagecontrolled oscillators, LDO regulators, power amplifiers, low noise amplifiers, operational amplifiers, low-power CNTFET-based quaternary multipliers, and STT MRAM-based cache memory for multicore systems are discussed. It points out the difficulties in designing CMOS analog and RF circuits for mmWave applications and looks into newly developed field-effect transistors for an alternate solution. Innovative devices such as III-V material-based HEMTs, and junctionless FETs are discussed. The book also looks at creative ways to improve circuit performance and energy efficiency, which is a useful resource for academics, researchers, and industry experts working in semiconductors.

This book will help the readers to stay on the cutting edge of contemporary circuit design technologies, covering various topics from fundamental circuit design to high-performance circuits.

商品描述(中文翻譯)

本書清楚地探討了尖端半導體電路技術及其實際應用。內容涵蓋了先進的晶體管設計、低功耗技術以及高性能電路設計等主題。

《現代應用的電路設計》探討了半導體技術的最新創新。書中討論了帶隙參考電路、四模晶體管、電壓控制振盪器、LDO 穩壓器、功率放大器、低噪聲放大器、運算放大器、基於低功耗 CNTFET 的四元乘法器，以及基於 STT MRAM 的多核心系統快取記憶體。它指出了在毫米波應用中設計 CMOS 類比和射頻電路的困難，並探討了新開發的場效應晶體管作為替代解決方案。書中還討論了如 III-V 材料基的 HEMT 和無接面 FET 等創新設備。本書還探討了改善電路性能和能效的創新方法，對於在半導體領域工作的學術界、研究人員和行業專家來說，是一個有用的資源。

本書將幫助讀者保持在當代電路設計技術的前沿，涵蓋從基本電路設計到高性能電路的各種主題。

作者簡介

A. Andrew Roobert is currently a Postdoctoral Fellow in the Department of Electronics and Electrical Engineering, Indian Institute of Technology Guwahati, Assam, India. He completed his Ph.D. degree in RFIC Design at Thiagarajar College of Engineering, Madurai, M.E. degree in VLSI Design at Francis Xavier Engineering College, Tirunelveli, and B.E. degree in Electronics and Communication Engineering at National Engineering College Kovilpatti. His research interests include RFIC Design, LNA Design, Circuit optimization, Low power VLSI Design, Physical Design, VLSI architecture design, electronic system design and wireless communication.

M. Venkatesh is currently an Assistant Professor in the Department of Electronics and Communication Engineering, CMR Institute of Technology, Bengaluru, India. He received his B.E degree in Electronics and Communication Engineering from SACS MAVMM Engineering College, Madurai (2013), M.E degree in VLSI Design from P.S.N.A. College of Engineering and Technology, Dindigul (2015), and completed his Ph.D. in Thiagarajar College of Engineering, Madurai on July (2020). His research interests include analytical modeling and simulation of Nanoscale SOI MOSFETs, Nanowire Transistors, HEMTs, Tunnel FET and Quantum Effects in Multigate MOSFETs.

Shiromani Balmukund Rahi completed his Ph. D. [2018] at the Indian Institute of Technology Kanpur (India) and post-doctoral research [2021] with Prof. N. Guenifi (Electronics Department, University Mostefa Benboulaid of Batna Algeria (Algeria). Currently he works at Mahamaya College of Agriculture Engineering and Technology Akabarpur Ambedkar Nagar Uttar Pradesh affiliated to Narendra Dev University of Agriculture and Technology Uttar Pradesh India and associated with Indian Institute of Technology Kanpur (India) for advance research for ultra low power devices, circuits and systems. He is currently working on various advanced Field Effect devices such as Tunnel FETs, negative FETs, Nanosheet FETs, NC-Tunnel FET, NC-FinFETs, and FeFETs.

G. Lakshmi Priya is currently an Assistant Professor Senior Grade-II in the School of Electronics Engineering (SENSE), VIT University, Chennai. She completed her Ph.D. in Semiconductor Device Modeling (2020), M.E. in Communication Systems, B.E. in Electronics and Communication Engineering from Thiagarajar College of Engineering, Madurai affiliated to Anna University Chennai. Her primary area of research is Semiconductor Devices and Nanoscale Transistors.

Samuel Tensingh received his B.E. degree in Electronics and Communication Engineering from Anna University, Chennai, India in 2008, and Master of Science in Integrated Circuit Design from Nanyang Technological University, Singapore & Technical University of Munich, Germany in 2010. He also received a Master of Business Administration from Anglia Ruskin University, United Kingdom in 2012. Currently he is working as an Associate Lecturer in the School of Biomedical Engineering, at the University of Sydney, Australia. He also previously worked for ST Microelectronics, Broadcom, and Avago Technologies in Singapore.

作者簡介(中文翻譯)

A. Andrew Roobert 目前是印度阿薩姆邦古瓦哈提印度理工學院電子與電氣工程系的博士後研究員。他在泰雅卡拉工程學院（Thiagarajar College of Engineering, Madurai）獲得射頻集成電路（RFIC）設計的博士學位，在法蘭西斯·澤維爾工程學院（Francis Xavier Engineering College, Tirunelveli）獲得VLSI設計的碩士學位，以及在國立工程學院（National Engineering College Kovilpatti）獲得電子與通信工程的學士學位。他的研究興趣包括RFIC設計、低噪聲放大器（LNA）設計、電路優化、低功耗VLSI設計、物理設計、VLSI架構設計、電子系統設計和無線通信。

M. Venkatesh 目前是印度班加羅爾CMR科技學院電子與通信工程系的助理教授。他在SACS MAVMM工程學院（Madurai）獲得電子與通信工程的學士學位（2013年），在P.S.N.A.工程與技術學院（Dindigul）獲得VLSI設計的碩士學位（2015年），並於2020年7月在泰雅卡拉工程學院（Madurai）完成博士學位。他的研究興趣包括納米尺度SOI MOSFET的分析建模與模擬、納米線晶體管、HEMT、隧道場效應晶體管（Tunnel FET）及多閘MOSFET中的量子效應。

Shiromani Balmukund Rahi 於2018年在印度坎普爾印度理工學院獲得博士學位，並於2021年在阿爾及利亞巴特納的穆斯特法·本布萊德大學（University Mostefa Benboulaid of Batna Algeria）電子系的N. Guenifi教授那裡進行博士後研究。目前，他在印度北方邦阿姆貝德卡爾納加爾的馬哈瑪雅農業工程與技術學院（Mahamaya College of Agriculture Engineering and Technology Akabarpur Ambedkar Nagar Uttar Pradesh）工作，並與坎普爾印度理工學院（Indian Institute of Technology Kanpur）合作進行超低功耗設備、電路和系統的先進研究。他目前正在研究各種先進的場效應設備，如隧道場效應晶體管（Tunnel FETs）、負場效應晶體管（negative FETs）、納米片場效應晶體管（Nanosheet FETs）、NC隧道場效應晶體管（NC-Tunnel FET）、NC鰭式場效應晶體管（NC-FinFETs）和FeFETs。

G. Lakshmi Priya 目前是VIT大學（VIT University, Chennai）電子工程學院（School of Electronics Engineering, SENSE）的高級助理教授。她於2020年獲得半導體器件建模的博士學位，並在泰雅卡拉工程學院（Thiagarajar College of Engineering, Madurai）獲得通信系統的碩士學位和電子與通信工程的學士學位，該學院隸屬於安娜大學（Anna University Chennai）。她的主要研究領域是半導體器件和納米尺度晶體管。

Samuel Tensingh 於2008年在印度安娜大學（Anna University, Chennai）獲得電子與通信工程的學士學位，並於2010年在新加坡南洋理工大學（Nanyang Technological University）和德國慕尼黑工業大學（Technical University of Munich）獲得集成電路設計的碩士學位。他還於2012年在英國安格利亞魯斯金大學（Anglia Ruskin University）獲得工商管理碩士學位。目前，他在澳大利亞悉尼大學（University of Sydney）生物醫學工程學院擔任副講師。他之前曾在新加坡的ST微電子（ST Microelectronics）、博通（Broadcom）和Avago Technologies工作。

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