Introduction to RF Power Amplifier Design and Simulation (Hardcover)
暫譯: 射頻功率放大器設計與模擬入門 (精裝版)
Abdullah Eroglu
- 出版商: CRC
- 出版日期: 2015-07-29
- 售價: $5,980
- 貴賓價: 9.5 折 $5,681
- 語言: 英文
- 頁數: 449
- 裝訂: Hardcover
- ISBN: 1482231646
- ISBN-13: 9781482231649
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相關分類:
電力電子 Power-electronics、電子學 Eletronics、電磁學 Electromagnetics
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商品描述
Introduction to RF Power Amplifier Design and Simulation fills a gap in the existing literature by providing step-by-step guidance for the design of radio frequency (RF) power amplifiers, from analytical formulation to simulation, implementation, and measurement. Featuring numerous illustrations and examples of real-world engineering applications, this book:
- Gives an overview of intermodulation and elaborates on the difference between linear and nonlinear amplifiers
- Describes the high-frequency model and transient characteristics of metal–oxide–semiconductor field-effect transistors
- Details active device modeling techniques for transistors and parasitic extraction methods for active devices
- Explores network and scattering parameters, resonators, matching networks, and tools such as the Smith chart
- Covers power-sensing devices including four-port directional couplers and new types of reflectometers
- Presents RF filter designs for power amplifiers as well as application examples of special filter types
- Demonstrates the use of computer-aided design (CAD) tools, implementing systematic design techniques
Blending theory with practice, Introduction to RF Power Amplifier Design and Simulation supplies engineers, researchers, and RF/microwave engineering students with a valuable resource for the creation of efficient, better-performing, low-profile, high-power RF amplifiers.
商品描述(中文翻譯)
《射頻功率放大器設計與模擬導論》填補了現有文獻中的空白,提供了從分析公式到模擬、實施和測量的射頻(RF)功率放大器設計的逐步指導。本書包含大量插圖和真實工程應用的範例,內容包括:
- 概述互調現象,並詳細說明線性放大器與非線性放大器之間的區別
- 描述金屬氧化物半導體場效應晶體管的高頻模型和瞬態特性
- 詳細介紹晶體管的主動元件建模技術及主動元件的寄生提取方法
- 探討網路和散射參數、諧振器、匹配網路以及史密斯圖等工具
- 涵蓋包括四端口定向耦合器和新型反射計在內的功率感測裝置
- 提供功率放大器的RF濾波器設計以及特殊濾波器類型的應用範例
- 演示計算機輔助設計(CAD)工具的使用,實施系統化設計技術
《射頻功率放大器設計與模擬導論》將理論與實踐相結合,為工程師、研究人員和RF/微波工程學生提供了一個寶貴的資源,以創建高效、性能更佳、低剖面、高功率的RF放大器。