High-k Gate Dielectrics for CMOS Technology (Hardcover)
暫譯: CMOS技術的高介電常數閘極絕緣體 (精裝版)

Gang He, Zhaoqi Sun

  • 出版商: Wiley
  • 出版日期: 2012-10-15
  • 定價: $6,360
  • 售價: 9.5$6,042
  • 語言: 英文
  • 頁數: 590
  • 裝訂: Hardcover
  • ISBN: 3527330321
  • ISBN-13: 9783527330324
  • 相關分類: CMOS
  • 立即出貨(限量) (庫存=1)

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商品描述

A state-of-the-art overview of high-k dielectric materials for advanced field-effect transistors, from both a fundamental and a technological viewpoint, summarizing the latest research results and development solutions.
As such, the book clearly discusses the advantages of these materials over conventional materials and also addresses the issues that accompany their integration into existing production technologies. Topics covered include downscaling limits of current transistor designs, deposition techniques for high-k dielectric materials, electrical characterization of the resulting devices, and an outlook towards future transistor stacking technology.
Aimed at academia and industry alike, this monograph combines introductory parts for newcomers to the field as well as advanced sections with directly applicable solutions for experienced researchers and developers in materials science, physics and electrical engineering.

商品描述(中文翻譯)

本書從基本和技術的角度提供了高介電常數(high-k)絕緣材料在先進場效應晶體管中的最新研究成果和發展解決方案的最前沿概述。

本書清楚地討論了這些材料相較於傳統材料的優勢,並且也探討了它們在現有生產技術中整合所面臨的問題。涵蓋的主題包括當前晶體管設計的縮小極限、高介電常數絕緣材料的沉積技術、所產生設備的電氣特性以及對未來晶體管堆疊技術的展望。

本書旨在服務學術界和產業界,結合了針對該領域新手的入門部分以及針對材料科學、物理學和電機工程領域的經驗豐富研究人員和開發者的直接應用解決方案的進階部分。