High-k Gate Dielectrics for CMOS Technology (Hardcover)

Gang He, Zhaoqi Sun

  • 出版商: Wiley
  • 出版日期: 2012-10-15
  • 售價: $6,360
  • 貴賓價: 9.5$6,042
  • 語言: 英文
  • 頁數: 590
  • 裝訂: Hardcover
  • ISBN: 3527330321
  • ISBN-13: 9783527330324
  • 相關分類: CMOS
  • 立即出貨(限量) (庫存=1)

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商品描述

A state-of-the-art overview of high-k dielectric materials for advanced field-effect transistors, from both a fundamental and a technological viewpoint, summarizing the latest research results and development solutions.
As such, the book clearly discusses the advantages of these materials over conventional materials and also addresses the issues that accompany their integration into existing production technologies. Topics covered include downscaling limits of current transistor designs, deposition techniques for high-k dielectric materials, electrical characterization of the resulting devices, and an outlook towards future transistor stacking technology.
Aimed at academia and industry alike, this monograph combines introductory parts for newcomers to the field as well as advanced sections with directly applicable solutions for experienced researchers and developers in materials science, physics and electrical engineering.

商品描述(中文翻譯)

這本書是一份關於高介電常數材料在先進場效電晶體中的最新研究成果和發展解決方案的尖端綜述,從基礎和技術的角度進行了總結。因此,本書清楚地討論了這些材料相對於傳統材料的優勢,並解決了將其整合到現有生產技術中所面臨的問題。涵蓋的主題包括目前晶體管設計的尺寸縮小限制、高介電常數材料的沉積技術、所得器件的電性表徵,以及對未來晶體管堆疊技術的展望。

這本專書旨在面向學術界和工業界,結合了對該領域新手的入門部分,以及對材料科學、物理學和電氣工程等經驗豐富的研究人員和開發人員直接應用的高級部分。