Power Gan Devices: Materials, Applications and Reliability (Paperback)
暫譯: 功率氮化鎵元件：材料、應用與可靠性 (平裝本)

Meneghini, Matteo, Meneghesso, Gaudenzio, Zanoni, Enrico

Power Gan Devices: Materials, Applications and Reliability (Paperback)

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商品描述

This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption.

The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach.

 

 

This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.

商品描述(中文翻譯)

這本書提供了第一個關於氮化鎵（GaN）基功率晶體管的特性和製造方法的全面概述，並由該領域最活躍的研究團隊貢獻。書中描述了氮化鎵如何成為製造功率晶體管的優秀材料；由於GaN具有高能隙、高擊穿電場和飽和速度，這些裝置可以達到超過千伏（kV）範圍的擊穿電壓，以及非常高的開關頻率，因此適合應用於功率轉換系統。基於GaN的開關模式功率轉換器已經展示出超過99%的效率，從而為GaN晶體管在功率轉換市場的大規模採用鋪平了道路。這預計在環境和經濟層面上都將帶來重要的優勢，因為功率轉換損耗佔全球電力消耗的10%。

書的第一部分描述了氮化鎵相較於傳統半導體材料的特性和優勢。第二部分則介紹了裝置製造所使用的技術，以及GaN-on-Silicon的量產方法。特別關注三種最先進的裝置結構：橫向晶體管、垂直功率裝置和基於納米線的HEMT（高電子遷移率晶體管）。書中還涵蓋了其他相關主題，如正常關閉操作的策略以及與裝置可靠性相關的問題。最後一章則從系統層面回顧了GaN HEMT的開關特性。

這本書是材料、裝置和功率電子領域工作者的獨特參考資料；它提供了有關材料生長、裝置製造、可靠性問題和電路級開關研究的跨學科資訊。

作者簡介

Matteo Meneghini received the Ph.D. degree in the optimization of GaN-based LED and laser structures from the University of Padova, Italy. He is currently Assistant Professor at the Department of Information Engineering, University of Padova. During his career he has extensively worked on the reliability and parasitics of GaN-based semiconductor devices for application in the RF, power electronics and optoelectronics fields: his research is mainly focused towards the understanding of the physical mechanisms that limit the performance and the reliability of GaN-based LEDs, lasers, and HEMTs.

Gaudenzio Meneghesso received the Ph.D. degree in electrical and telecommunication engineering from the University of Padova, Padova, Italy, in 1997. In 1995, he was with the University of Twente, Enschede, The Netherlands, with a Human Capital and Mobility fellowship (within the SUSTAIN Network) working on the dynamic behavior of protection structures against electrostatic discharge (ESD). Since 2011, he has been a Full Professor with the Department of Information Engineering, University of Padova.
Enrico Zanoni was born in Verona, Italy, in 1956. He received the Laurea degree in physics (cum laude) from the University of Modena and Reggio Emilia, Modena, Italy, in 1982, after a student internship with the S. Carlo Foundation, Modena. During 1985-1988, he was an Assistant Professor with the Faculty of Engineering, University of Bari, Bari, Italy. From 1988 to 1993, he frequently visited the U.S. and established research collaborations with Bell Laboratories; Hughes Research Laboratories; IBM T. J. Watson Research Center; Massachusetts Institute of Technology, Cambridge, MA, USA; TRW (currently, Northrop Grumman); University of California, Santa Barbara, CA, USA; and many other industrial and academic laboratories. During 1996-1997, he was a Full Professor of industrial electronics with the University of Modena and Reggio Emilia. He is currently with the University of Padova, Padua, Italy, where he was an Assistant Professor during 1988-1992, an Associate Professor of electronics during 1992-1993, a Full Professor of microelectronics during 1993-1996, and has been a Full Professor of digital electronics with the Department of Information Engineering since 1997.

 

作者簡介(中文翻譯)

Matteo Meneghini 於義大利帕多瓦大學獲得基於氮化鎵（GaN）的LED和激光結構優化的博士學位。他目前是帕多瓦大學資訊工程系的助理教授。在他的職業生涯中，他廣泛研究了用於射頻（RF）、電力電子和光電領域的基於GaN的半導體器件的可靠性和寄生效應：他的研究主要集中在理解限制基於GaN的LED、激光器和高電子遷移率晶體管（HEMTs）性能和可靠性的物理機制。

Gaudenzio Meneghesso 於1997年在義大利帕多瓦大學獲得電氣和電信工程的博士學位。1995年，他在荷蘭恩斯赫德的特溫特大學擔任人力資本與流動性獎學金（在SUSTAIN網絡內）研究靜電放電（ESD）保護結構的動態行為。自2011年以來，他一直是帕多瓦大學資訊工程系的正教授。

Enrico Zanoni 於1956年出生於義大利維羅納。他於1982年在義大利摩德納和雷焦艾米利亞大學獲得物理學（優等）學位，並在摩德納的S. Carlo基金會進行學生實習。1985年至1988年期間，他在義大利巴里大學工程學院擔任助理教授。從1988年到1993年，他經常訪問美國，並與貝爾實驗室、休斯研究實驗室、IBM T. J. Watson研究中心、麻省理工學院（MIT）、TRW（目前的北方格魯曼）、加州大學聖巴巴拉分校及許多其他工業和學術實驗室建立了研究合作。1996年至1997年期間，他擔任摩德納和雷焦艾米利亞大學的工業電子正教授。目前他在義大利帕多瓦大學任教，曾於1988年至1992年擔任助理教授，1992年至1993年擔任電子學副教授，1993年至1996年擔任微電子學正教授，自1997年以來擔任資訊工程系的數位電子學正教授。

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