Gallium Nitride (Gan): Physics, Devices, and Technology
暫譯: 氮化鎵 (GaN)：物理、器件與技術

Medjdoub, Farid

Gallium Nitride (Gan): Physics, Devices, and Technology

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商品描述

Addresses a Growing Need for High-Power and High-Frequency Transistors

 

Gallium Nitride (GaN): Physics, Devices, and Technology offers a balanced perspective on the state of the art in gallium nitride technology. A semiconductor commonly used in bright light-emitting diodes, GaN can serve as a great alternative to existing devices used in microelectronics. It has a wide band gap and high electron mobility that gives it special properties for applications in optoelectronic, high-power, and high-frequency devices, and because of its high off-state breakdown strength combined with excellent on-state channel conductivity, GaN is an ideal candidate for switching power transistors.

 

Explores Recent Progress in High-Frequency GaN Technology

 

Written by a panel of academic and industry experts from around the globe, this book reviews the advantages of GaN-based material systems suitable for high-frequency, high-power applications. It provides an overview of the semiconductor environment, outlines the fundamental device physics of GaN, and describes GaN materials and device structures that are needed for the next stage of microelectronics and optoelectronics. The book details the development of radio frequency (RF) semiconductor devices and circuits, considers the current challenges that the industry now faces, and examines future trends.

 

In addition, the authors:

 

 

 

  • Propose a design in which multiple LED stacks can be connected in a series using interband tunnel junction (TJ) interconnects
  • Examine GaN technology while in its early stages of high-volume deployment in commercial and military products
  • Consider the potential use of both sunlight and hydrogen as promising and prominent energy sources for this technology
  • Introduce two unique methods, PEC oxidation and vapor cooling condensation methods, for the deposition of high-quality oxide layers

 

A single-source reference for students and professionals, Gallium Nitride (GaN): Physics, Devices, and Technology provides an overall assessment of the semiconductor environment, discusses the potential use of GaN-based technology for RF semiconductor devices, and highlights the current and emerging applications of GaN.

商品描述(中文翻譯)

滿足對高功率和高頻率晶體管日益增長的需求

氮化鎵 (GaN)：物理、設備與技術 提供了氮化鎵技術的最新進展的平衡視角。氮化鎵是一種常用於明亮發光二極體的半導體，能夠作為微電子學中現有設備的優良替代品。它具有寬帶隙和高電子遷移率，賦予其在光電、高功率和高頻率設備中的特殊性能，並且由於其高關斷狀態擊穿強度結合優秀的導通狀態通道導電性，氮化鎵是開關電源晶體管的理想候選者。

探討高頻氮化鎵技術的最新進展

本書由來自全球的學術和產業專家撰寫，回顧了適用於高頻、高功率應用的氮化鎵基材料系統的優勢。它提供了半導體環境的概述，概述了氮化鎵的基本設備物理，並描述了微電子學和光電子學下一階段所需的氮化鎵材料和設備結構。本書詳細介紹了射頻 (RF) 半導體設備和電路的發展，考慮了當前行業面臨的挑戰，並檢視未來的趨勢。

此外，作者還：

- 提出了一種設計，其中多個 LED 堆疊可以通過帶隙隧道接合 (TJ) 互連串聯連接
- 檢視氮化鎵技術在商業和軍事產品的高容量部署早期階段
- 考慮陽光和氫氣作為該技術有前景和突出的能源來源的潛在用途
- 介紹兩種獨特的方法，PEC 氧化和蒸氣冷凝方法，用於沉積高品質的氧化層

作為學生和專業人士的單一來源參考，氮化鎵 (GaN)：物理、設備與技術 提供了對半導體環境的整體評估，討論了氮化鎵基技術在 RF 半導體設備中的潛在用途，並突顯了氮化鎵的當前和新興應用。

作者簡介

Farid Medjdoub is a CNRS senior scientist at IEMN in France. He earned his Ph.D in electrical engineering from the University of Lille in 2004, and worked as a research associate at the University of Ulm in Germany before joining IMEC. Medjdoub's research interests include the design, fabrication, and characterization of innovative GaN-based devices. He is the author and co-author of more than 100 articles, and holds several patents deriving from his research. In addition, he serves as a reviewer for IEEE journals, is a TPC member in several conferences, and is part of the French observatory of wide-bandgap devices.

 

Krzysztof (Kris) Iniewski manages R&D at Redlen Technologies, Inc., Vancouver, Canada. He is also the president of CMOS Emerging Technologies Research, Inc. (www.cmosetr.com). Iniewski has held numerous faculty and management positions at the University of Toronto, University of Alberta, SFU, and PMC-Sierra, Inc. He has written and edited several books for numerous publications including CRC Press, published more than 100 articles in international journals and conferences, and holds numerous international patents. He is also a frequent invited speaker and has consulted for multiple organizations internationally. His personal goal is to contribute to healthy living and sustainability through innovative engineering solutions.

作者簡介(中文翻譯)

法里德·梅吉杜布（Farid Medjdoub）是法國IEMN的CNRS高級科學家。他於2004年在里爾大學獲得電機工程博士學位，並在德國烏爾姆大學擔任研究助理，之後加入IMEC。梅吉杜布的研究興趣包括創新氮化鎵（GaN）基元件的設計、製造和特性分析。他是超過100篇文章的作者和合著者，並擁有多項源自其研究的專利。此外，他還擔任IEEE期刊的審稿人，是多個會議的技術程序委員會成員，並參與法國寬帶隙元件觀測站的工作。

克日什托夫·（Kris）·伊涅夫斯基（Krzysztof Iniewski）管理位於加拿大溫哥華的Redlen Technologies, Inc.的研發部門。他同時也是CMOS新興技術研究公司（CMOS Emerging Technologies Research, Inc.，網址：www.cmosetr.com）的總裁。伊涅夫斯基曾在多倫多大學、阿爾伯塔大學、SFU和PMC-Sierra, Inc.擔任多個教職和管理職位。他為多家出版機構撰寫和編輯了幾本書籍，包括CRC Press，並在國際期刊和會議上發表了超過100篇文章，擁有多項國際專利。他也是經常受邀的演講者，並為多個國際組織提供諮詢服務。他的個人目標是通過創新的工程解決方案促進健康生活和可持續發展。

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