GaN Transistors for Efficient Power Conversion Hardcover
暫譯: 高效能電源轉換的氮化鎵晶體管 (GaN)
Alex Lidow, Johan Strydom, Michael de Rooij, David Reusch
- 出版商: Wiley
- 出版日期: 2014-09-15
- 售價: $4,300
- 貴賓價: 9.5 折 $4,085
- 語言: 英文
- 頁數: 266
- 裝訂: Hardcover
- ISBN: 1118844769
- ISBN-13: 9781118844762
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其他版本:
GaN Transistors for Efficient Power Conversion, 3/e (Hardcover)
商品描述
Gallium nitride (GaN) is an emerging technology that promises to displace silicon MOSFETs in the next generation of power transistors. As silicon approaches its performance limits, GaN devices offer superior conductivity and switching characteristics, allowing designers to greatly reduce system power losses, size, weight, and cost.
This timely second edition has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices.
With higher-frequency switching capabilities, GaN devices offer the chance to increase efficiency in existing applications such as DC–DC conversion, while opening possibilities for new applications including wireless power transfer and envelope tracking. This book is an essential learning tool and reference guide to enable power conversion engineers to design energy-efficient, smaller and more cost-effective products using GaN transistors.
Key features:
- Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications.
- Contains useful discussions on device–circuit interactions, which are highly valuable since the new and high performance GaN power transistors require thoughtfully designed drive/control circuits in order to fully achieve their performance potential.
- Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors – see companion website for further details.
- A valuable learning resource for professional engineers and systems designers needing to fully understand new devices as well as electrical engineering students.
商品描述(中文翻譯)
氮化鎵(GaN)是一項新興技術,預計將在下一代功率晶體管中取代矽MOSFET。隨著矽接近其性能極限,GaN設備提供了優越的導電性和開關特性,使設計師能夠大幅減少系統的功率損耗、尺寸、重量和成本。
這本及時的第二版已大幅擴展,以幫助學生和實踐中的功率轉換工程師在GaN技術進步方面保持領先。這本書承認GaN晶體管並不是現有MOSFET技術的一對一替代品,而是作為理解基本GaN晶體管結構、特性和應用的實用指南。書中包括了對這些功率半導體基本物理的討論、佈局及其他電路設計考量,以及展示在使用GaN設備時的設計技術的具體應用範例。
由於具備更高頻率的開關能力,GaN設備提供了提高現有應用(如DC-DC轉換)效率的機會,同時開啟了無線電力傳輸和包絡追蹤等新應用的可能性。這本書是功率轉換工程師設計能效更高、體積更小且更具成本效益的GaN晶體管產品的必備學習工具和參考指南。
主要特點:
- 由功率半導體領域的領導者和GaN功率晶體管技術及應用的行業先驅撰寫。
- 包含有關設備與電路互動的有用討論,這些討論非常有價值,因為新的高性能GaN功率晶體管需要精心設計的驅動/控制電路,以充分發揮其性能潛力。
- 提供在使用GaN晶體管構建功率轉換系統時制定具體電路設計的實用指導 - 詳情請參見附屬網站。
- 對於需要充分理解新設備的專業工程師和系統設計師,以及電機工程學生來說,這是一本有價值的學習資源。