Parameter-Centric Scaled Fet Devices: Physics Based Perspectives and Attributes
暫譯: 以參數為中心的縮放FET裝置：基於物理的觀點與特性
Ashraf, Nabil Shovon
- 出版商: Springer
- 出版日期: 2025-03-27
- 售價: $1,880
- 貴賓價: 9.5 折 $1,786
- 語言: 英文
- 頁數: 129
- 裝訂: Hardcover - also called cloth, retail trade, or trade
- ISBN: 3031842855
- ISBN-13: 9783031842856
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相關分類:
物理學 Physics
海外代購書籍(需單獨結帳)
相關主題
商品描述
Parameters that determine the performance of silicon-based Field Effect Transistors (FET) devices in the presence of degenerate doping, often are not modeled properly and so require precise analysis to improve modeling accuracy. The book is focused on the extraction of parameters for silicon-based FET models that critically determine the FET performance at room temperature as well as at very low temperatures. Emphasize is put on analysis that is based on the device physics, especially at low (cryogenic) temperatures. Performance of gate-all-around (GAA) nanowire FETs, and stacked nanosheet complementary FETs (C-FET) are also discussed.
商品描述(中文翻譯)
參數決定了在退化摻雜情況下矽基場效應電晶體（FET）裝置的性能，這些參數往往未被正確建模，因此需要精確的分析來提高建模的準確性。本書專注於提取矽基FET模型的參數，這些參數對於在室溫及極低溫下（低於絕對零度）FET的性能至關重要。特別強調基於裝置物理的分析，尤其是在低（低溫）環境下。書中還討論了環繞閘（GAA）奈米線FET和堆疊奈米片互補FET（C-FET）的性能。
作者簡介
Dr. Nabil Shovon Ashraf was born on 10th of August 1974 in Dhaka, Bangladesh and grew up in Dhaka, Bangladesh. He obtained B.Tech in electrical engineering from IIT Kanpur India in May 1997, M.S. degree from the University of Central Florida, Orlando, Florida, USA in August 1999 in Electrical Engineering, and PhD degree from the Electrical Engineering Department of Arizona State University, Tempe, Arizona, USA in December 2011. He was a post-doctoral researcher at Arizona State University Electrical Engineering Department between 2011 and 2014. From August 1999 to March 2001, he was employed as a SAW filter design engineer in RF Monolithic Inc, Dallas, Texas, USA.
He served in various universities in Dhaka, Bangladesh as an Electrical and Electronic Engineering faculty from 2002 to 2006. After returning to Dhaka, Bangladesh in February 2014 after completion of Post Doctoral work, he served as Assistant Professor from September 2014 and then Associate Professor from April 2018 in the ECE department of North South University, Dhaka, Bangladesh until May 2022. Presently, he conducts independent research in the field of semiconductor device scaling, modeling, and device physics study of advanced FET architectures.
He authored two books that were published by Morgan & Claypool in 2016 and 2018. These books are currently available from Springer Nature. To-date, he has also authored eight journals and about 15 conference papers along with eight book Chapters. He was also the recipients of Albert Nelson Marquis Lifetime Achievement Award in 2017, listed in the 69th edition and the 70th platinum edition of author biographees in Marquis Who's Who in America publications.
作者簡介(中文翻譯)
Dr. Nabil Shovon Ashraf 於1974年8月10日出生於孟加拉國達卡，並在達卡長大。他於1997年5月獲得印度坎普爾理工學院（IIT Kanpur）電機工程學士學位，1999年8月在美國佛羅里達州奧蘭多的中央佛羅里達大學獲得電機工程碩士學位，並於2011年12月在美國亞利桑那州坦佩的亞利桑那州立大學電機工程系獲得博士學位。他於2011年至2014年間擔任亞利桑那州立大學電機工程系的博士後研究員。從1999年8月到2001年3月，他在美國德克薩斯州達拉斯的 RF Monolithic Inc 擔任 SAW 濾波器設計工程師。
他於2002年至2006年間在孟加拉國達卡的多所大學擔任電機與電子工程系的教職。2014年2月完成博士後工作後返回達卡，並於2014年9月擔任北南大學（North South University）電子與通訊工程系的助理教授，於2018年4月晉升為副教授，直到2022年5月。目前，他在半導體器件縮放、建模及先進 FET 架構的器件物理研究領域進行獨立研究。
他於2016年和2018年出版了兩本書，這些書籍目前由 Springer Nature 提供。至今，他還發表了八篇期刊文章和約15篇會議論文，以及八個書章。他於2017年獲得阿爾伯特·納爾遜·馬奎斯終身成就獎，並在《馬奎斯美國名人錄》第69版和第70版白金版中列名。
