Handbook for III-V High Electron Mobility Transistor Technologies
暫譯: III-V 高電子遷移率晶體管技術手冊

Nirmal, D., Ajayan, J.

Handbook for III-V High Electron Mobility Transistor Technologies

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商品描述

This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT).

Key Features

 

 

 

 

 

 

 

 

 

 

  • Combines III-As/P/N HEMTs with reliability and current status in single volume
  • Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis
  • Covers all theoretical and experimental aspects of HEMTs
  • Discusses AlGaN/GaN transistors
  • Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots

商品描述(中文翻譯)

這本書專注於III-V族高電子遷移率電晶體（HEMTs），涵蓋基本物理、所用材料、製造細節、建模、模擬及其他重要方面。書中首先描述了操作原理、材料系統及材料技術，接著介紹AlGaN/GaN HEMTs的結構、I-V特性，以及直流（DC）和射頻（RF）參數的建模。書中還提供了有關源/漏極工程、閘極工程和通道工程技術的信息，這些技術用於改善HEMTs的直流-射頻（DC-RF）和擊穿性能。最後，書中還強調了金屬氧化物半導體高電子遷移率電晶體（MOS-HEMT）的重要性。

**主要特點**

- 將III-As/P/N HEMTs的可靠性和當前狀態整合於單一卷中
- 包含交流/直流建模及（亞）毫米波設備的可靠性分析
- 涵蓋HEMTs的所有理論和實驗方面
- 討論AlGaN/GaN電晶體
- 使用圖表展示各種材料系統上HEMTs的直流、射頻及擊穿特性

作者簡介

D.Nirmal (M'08 - SM'15)is currently an Associate Professor in the Schoolof Electrical sciences, Karunya University, India. Hereceived the Ph.D. degree in Information and CommunicationEngineering from Anna University, India.His research interest includes Nano electronics, Optoelectronics, Microelectronics, VLSI Design, Device fabrication and modelling. He is the author of many Refereedinternational journals and conferences. He is a Chair of IEEE EDCoimbatore Chapter. He has been awarded as Shri.P. K. Das Memorial Best Faculty Award in the Year2013. He has received best high impact factor journal publication awardand best researcher award from Karunya University in 2012 and 2014 respectively. He has delivered manylecture andinvited to chair severalconference/workshop in National and International Level. He is currently an editor in microelectronics journal. He is a senior member of IEEE, Member of IETE, SSI, ISTE and IEI Societies.

 

J. Ajayan received the B.Tech. Degree in electronics and communication engineering from Kerala University, Trivandrum, India, in 2009 and the M.Tech. degree in VLSI Design from Karunya University, Coimbatore, India, in 2012 and the Ph.D. degree in electronics and communication engineering from Karunya University, Coimbatore, INDIA, in 2017. He is a Senior assistant professor in the department of electronics and communication engineering at SNS College of Technology, Coimbatore, Tamilnadu, India. He has presented papers in many international conferences and also he is an author of many Refereed international journals (Elsevier, Taylor and Francis, Springer, IOP Science).

作者簡介(中文翻譯)

D. Nirmal（M'08 - SM'15）目前是印度卡魯尼亞大學（Karunya University）電氣科學學院的副教授。他於印度安娜大學（Anna University）獲得資訊與通信工程的博士學位。他的研究興趣包括奈米電子學、光電子學、微電子學、VLSI設計、器件製造與建模。他是多本國際期刊和會議的作者，並擔任IEEE Coimbatore分會的主席。他於2013年獲得Shri P. K. Das紀念最佳教學獎，並於2012年和2014年分別獲得卡魯尼亞大學的最佳高影響因子期刊發表獎和最佳研究員獎。他在國內外多個會議和研討會上發表過演講並受邀擔任主席。目前，他是微電子學期刊的編輯，也是IEEE的資深會員，並且是IETE、SSI、ISTE和IEI協會的成員。


J. Ajayan於2009年在印度特里凡得琅的喀拉拉大學（Kerala University）獲得電子與通信工程的B.Tech.學位，於2012年在印度Coimbatore的卡魯尼亞大學獲得VLSI設計的M.Tech.學位，並於2017年在卡魯尼亞大學獲得電子與通信工程的博士學位。他是印度泰米爾納德邦Coimbatore的SNS科技學院電子與通信工程系的高級助理教授。他在多個國際會議上發表過論文，並且是多本經過審核的國際期刊的作者（Elsevier, Taylor and Francis, Springer, IOP Science）。

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