Advanced Indium Arsenide-Based Hemt Architectures for Terahertz Applications
暫譯: 先進的砷化銦基高電子遷移率晶體管架構於太赫茲應用
Mohankumar, N.
- 出版商: CRC
- 出版日期: 2021-09-29
- 售價: $4,910
- 貴賓價: 9.5 折 $4,665
- 語言: 英文
- 頁數: 130
- 裝訂: Hardcover - also called cloth, retail trade, or trade
- ISBN: 0367554143
- ISBN-13: 9780367554149
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相關主題
商品描述
High electron mobility transistor (HEMT) has better performance potential than the conventional MOSFETs. Further, InAs is a perfect candidate for the HEMT device architecture owing to its peak electron mobility. Advanced Indium Arsenide-based HEMT Architectures for Terahertz Applications characterizes the HEMT based on InAs III-V material to achieve outstanding current and frequency performance. This book explains different types of device architectures available to enhance performance including InAs-based single gate (SG) HEMT and double gate (DG) HEMT. The noise analysis of InAs-based SG and DG-HEMT is also discussed. The main goal of this book is to characterize the InAs device to achieve terahertz frequency regime with proper device parameters.
Features:
- Explains the influence of InAs material in the performance of HEMTs and MOS-HEMTs.
- Covers novel indium arsenide architectures for achieving terahertz frequencies
- Discusses impact of device parameters on frequency response
- Illustrates noise characterization of optimized indium arsenide HEMTs
- Introduces terahertz electronics including sources for terahertz applications.
This book is of special interest to researchers and graduate students in Electronics Engineering, High Electron Mobility Transistors, Semi-conductors, Communications, and Nanodevices.
商品描述(中文翻譯)
高電子遷移率晶體管（HEMT）相較於傳統的MOSFET具有更好的性能潛力。此外，由於其峰值電子遷移率，InAs是HEMT裝置架構的理想候選材料。《先進的砷化銦基HEMT架構於太赫茲應用》特徵化基於InAs III-V材料的HEMT，以實現卓越的電流和頻率性能。本書解釋了不同類型的裝置架構，以提升性能，包括基於InAs的單閘（SG）HEMT和雙閘（DG）HEMT。還討論了基於InAs的SG和DG-HEMT的噪聲分析。本書的主要目標是特徵化InAs裝置，以實現具有適當裝置參數的太赫茲頻率範圍。
特色：
- 解釋InAs材料對HEMT和MOS-HEMT性能的影響。
- 涵蓋新穎的砷化銦架構以實現太赫茲頻率。
- 討論裝置參數對頻率響應的影響。
- 說明優化的砷化銦HEMT的噪聲特徵化。
- 介紹太赫茲電子學，包括太赫茲應用的來源。
本書對電子工程、高電子遷移率晶體管、半導體、通訊和納米裝置的研究人員及研究生特別有興趣。
作者簡介
Dr. N. Mohankumar was born in India in 1978. He received his B.E. Degree from Bharathiyar University, Tamilnadu, India, in 2000 and M.E. & Ph.D Degree from Jadavpur University, Kolkata in 2004 & 2010. He joined the Nano Device Simulation Laboratory in 2007 and worked as a Senior Research Fellow under CSIR direct Scheme till September 2009. Later he joined SKP Engineering College as a Professor to develop research activities in VLSI and NANO technology. He initiated and formed the centre of excellence in VLSI and NANO technology at SKP Engg college at the cost of 1 crore.
MoU was signed between SKP and Tokyo Institute of technology, Japan and New Jersey Institute of technology under his guidance. In the year 2010 he visited Tokyo institute of technology, Japan as a visiting professor for the period of three months. In the year 2012 he visited New Jersy Institute of Technology, USA as a visiting professor for a period of 2 months. In 2013 he visited National Chaio Tung University Taiwan as a Research Professor for 2 Weeks. He is currently working as a Professor & Head of EECE Department at GITAM Deemed to be University, Bengaluru Campus.
He is a Senior Member of IEEE and served as Secretary of IEEE, EDS Calcutta chapter from 2007 to 2010. He served as a Chairman of IEEE EDS Madras Chapter from (2010 - 2017). He has about 70 International journal publications in reputed journals and about 50 international conference proceedings. He received the carrier award for young teachers (CAYT) from AICTE, New Delhi, in 2012-2014.
He is a recognized supervisor for research under Anna University and Jadavpur University. 15 PhD Scholars have completed under his supervision. More than 50 M.E students have done their thesis under his guidance. At present, he is guiding 3 PhD Research scholars and 2 M.E students.
His research interest includes modeling and simulation study of HEMTs, optimization of devices for RF applications and characterization of advanced HEMT architecture, Terahertz Electronics, High Frequency Imaging, Sensors and Communication.
作者簡介(中文翻譯)
N. Mohankumar 博士於1978年出生於印度。他於2000年獲得印度泰米爾納德邦巴拉提亞大學的工程學士學位，並於2004年和2010年分別獲得加爾各答的賈達普爾大學的碩士和博士學位。他於2007年加入奈米裝置模擬實驗室，並在CSIR直接計畫下擔任高級研究員，直到2009年9月。之後，他加入SKP工程學院擔任教授，發展VLSI和奈米技術的研究活動。他在SKP工程學院啟動並成立了VLSI和奈米技術的卓越中心，耗資1億印度盧比。
在他的指導下，SKP與日本東京科技大學及新澤西理工學院簽署了合作備忘錄。2010年，他作為訪問教授前往日本東京科技大學，為期三個月。2012年，他作為訪問教授前往美國新澤西理工學院，為期兩個月。2013年，他作為研究教授訪問了台灣國立交通大學，為期兩週。目前，他在班加羅爾的GITAM大學擔任電氣與電子工程系的教授及系主任。
他是IEEE的高級會員，並於2007年至2010年擔任IEEE EDS加爾各答分會的秘書。他於2010年至2017年擔任IEEE EDS馬德拉斯分會的主席。他在知名期刊上發表了約70篇國際期刊論文，並參加了約50場國際會議的論文集。他於2012年至2014年獲得新德里的AICTE頒發的青年教師職業獎（CAYT）。
他是安娜大學和賈達普爾大學的研究指導教師，已有15名博士生在他的指導下完成學業。超過50名碩士生在他的指導下完成論文。目前，他正在指導3名博士研究生和2名碩士生。
他的研究興趣包括HEMT的建模與模擬研究、RF應用裝置的優化以及先進HEMT架構的特性分析、太赫茲電子學、高頻成像、傳感器和通信。
