Handbook for III-V High Electron Mobility Transistor Technologies

Nirmal, D., Ajayan, J.

Handbook for III-V High Electron Mobility Transistor Technologies

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商品描述

This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT).

Key Features

 

 

 

 

 

 

 

 

 

 

  • Combines III-As/P/N HEMTs with reliability and current status in single volume
  • Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis
  • Covers all theoretical and experimental aspects of HEMTs
  • Discusses AlGaN/GaN transistors
  • Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots

商品描述(中文翻譯)

本書專注於III-V高電子遷移率電晶體（HEMTs），包括基本物理、材料使用、製造細節、建模、模擬和其他重要方面。首先介紹操作原理、材料系統和材料技術，然後描述AlGaN/GaN HEMTs的結構、I-V特性、直流和射頻參數的建模。本書還提供了有關改善HEMTs的直流-射頻和擊穿性能的源/漏工程、閘極工程和通道工程技術的信息。最後，本書還強調了金屬氧化物半導體高電子遷移率電晶體（MOS-HEMT）的重要性。

主要特點：

- 將III-As/P/N HEMTs與可靠性和當前狀態結合在一本書中
- 包括交流/直流建模和（次）毫米波器件的可靠性分析
- 涵蓋HEMTs的所有理論和實驗方面
- 討論AlGaN/GaN電晶體
- 通過圖表和曲線展示了不同材料系統上HEMTs的直流、射頻和擊穿特性

作者簡介

D.Nirmal (M'08 - SM'15)is currently an Associate Professor in the Schoolof Electrical sciences, Karunya University, India. Hereceived the Ph.D. degree in Information and CommunicationEngineering from Anna University, India.His research interest includes Nano electronics, Optoelectronics, Microelectronics, VLSI Design, Device fabrication and modelling. He is the author of many Refereedinternational journals and conferences. He is a Chair of IEEE EDCoimbatore Chapter. He has been awarded as Shri.P. K. Das Memorial Best Faculty Award in the Year2013. He has received best high impact factor journal publication awardand best researcher award from Karunya University in 2012 and 2014 respectively. He has delivered manylecture andinvited to chair severalconference/workshop in National and International Level. He is currently an editor in microelectronics journal. He is a senior member of IEEE, Member of IETE, SSI, ISTE and IEI Societies.

 

J. Ajayan received the B.Tech. Degree in electronics and communication engineering from Kerala University, Trivandrum, India, in 2009 and the M.Tech. degree in VLSI Design from Karunya University, Coimbatore, India, in 2012 and the Ph.D. degree in electronics and communication engineering from Karunya University, Coimbatore, INDIA, in 2017. He is a Senior assistant professor in the department of electronics and communication engineering at SNS College of Technology, Coimbatore, Tamilnadu, India. He has presented papers in many international conferences and also he is an author of many Refereed international journals (Elsevier, Taylor and Francis, Springer, IOP Science).

作者簡介(中文翻譯)

D.Nirmal（M'08 - SM'15）目前是印度卡魯尼亞大學電氣科學學院的副教授。他在印度安娜大學獲得了信息與通信工程博士學位。他的研究興趣包括納米電子學、光電子學、微電子學、VLSI設計、器件製造和建模。他是許多國際期刊和會議的作者。他是IEEE EDCoimbatore分會主席。他在2013年獲得了Shri.P. K. Das紀念最佳教職獎。他分別在2012年和2014年獲得了卡魯尼亞大學最佳高影響因子期刊出版獎和最佳研究員獎。他在國內外多次發表演講並應邀擔任多個國家和國際級會議/研討會主席。他目前是微電子學期刊的編輯。他是IEEE的高級會員，也是IETE、SSI、ISTE和IEI學會的成員。

J. Ajayan於2009年在印度特里凡得琅的喀拉拉邦大學獲得電子與通信工程學士學位，2012年在印度科伊姆巴托爾的卡魯尼亞大學獲得VLSI設計碩士學位，2017年在印度科伊姆巴托爾的卡魯尼亞大學獲得電子與通信工程博士學位。他是印度泰米爾納德邦科伊姆巴托爾SNS技術學院電子與通信工程系的高級助理教授。他在許多國際會議上發表論文，並且是許多國際期刊（Elsevier、Taylor and Francis、Springer、IOP Science）的作者。

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