High-temperature Electronics (a Selected Reprint Volume)
暫譯: 高溫電子學（精選重印卷）

Name: High-temperature Electronics (a Selected Reprint Volume)
Price: 7771 TWD
Availability: OnlineOnly
Author: Kirschman
ISBN: 0780334779

Kirschman

出版商: Wiley
出版日期: 1998-09-01
售價: $8,180
貴賓價: 9.5 折 $7,771
語言: 英文
頁數: 912
裝訂: Hardcover
ISBN: 0780334779
ISBN-13: 9780780334779

海外代購書籍(需單獨結帳)

商品描述

Description:

Electrical Engineering High-Temperature Electronics High-Temperature Electronics provides expert coverage of the applications, characteristics, design, selection, and operation of electronic devices and circuits at temperatures above the conventional limit of 125°C. This volume contains approximately 100 key reprinted papers covering a wide range of topics related to high-temperature electronics, nine chapter introductions, eight invited papers, extensive references, and a comprehensive bibliography. It brings the reader a well-rounded review of high-temperature electronics from its beginnings decades ago through the present and beyond to possible future technologies. The scope of High-Temperature Electronics includes active components from standard and advanced semiconductor materials, passive components, as well as technologies for metallizations, interconnections, and the assembly and packaging of electronic components. This book will provide active researchers, technology developers, managers, materials scientists, and advanced students with a fundamental grounding in high-temperature electronics technology.

Table of Contents:

Foreword.

Preface.
Acknowledgments.
GENERAL INTRODUCTION.
General Introduction (R. Kirschman).
The Characterization of High-Temperature Electronics for Future Aircraft Engine Digital Electronic Control Systems (J. Wiley and D. Dening).
A Summary of High-Temperature Electronics Research and Development (F. Thome and D. King).
An Overview of High-Temperature Electronic Device Technologies and Potential Applications (P. Dreike, et al.).
Silicon and Gallium Arsenide in High-Temperature Electronics Applications (J. Klein).
The Influence of Temperature on Integrated Circuit Failure Mechanisms (M. Pecht, et al.).
Assessment of Reliability Concerns for Wide-Temperature Operation of Semiconductor Devices and Circuits (J. Kopanski, et al.).
High-Temperature Silicon Carbide Electronic Devices (Westinghouse).
Hot Time in Store for ICs (N. Mokhoff).
Beat-the-heat Hybrids Ready to Go to Market (L. Lowe).
High-Temperature Transistor and Thyristor Developed.
High-Temperature Electronics and Sensors.
New Transistors Take the Heat.
APPLICATIONS, NEEDS, AND ALTERNATIVES.
Introduction (F. Thomê and D. King).
Thermal Protection Methods for Electronics in Hot Wells (G. Bennett).
Service Company Needs (P. Sinclair).
Present and Future Needs in High-Temperature Electronics for the Well Logging Industry (N. Sanders).
High-Temperature Electronics for Geothermal Energy (A. Veneruso).
High-Temperature Electronic Requirements in Aeropropulsion Systems (W. Nieberding and J. Powell).
The Requirements for High-Temperature Electronics in a Future High Speed Transport (C. Carlin and J. Ray).
High-Temperature Electronics for Automobiles (M. Tamor).
High-Temperature Automotive Electronics: An Overview (J. Erskine, et al.).
High-Temperature Electronics Applications in Space Exploration (R. Jurgens).
Research Activity on High-Temperature Electronics and Its Future Application in Space Exploration in Japan (M. Tajima).
Wireless, In-vessel Neutron Monitor for Initial Core-Loading of Advanced Breeder Reactors (J. DeLorenzi, et al.).
The Effect of Maximum Allowable Payload Temperature on the Mass of a Multimegawatt Space Based Platform (D. Dobranich).
SILICON DEVICES AND INTEGRATED CIRCUITS.
Introduction (F. Shoucair).
High-Temperature Silicon Diodes Models (E. Clarke, et al.).
High-Temperature Microelectronics—Expanding the Applications for Smart Sensors (R. Brown, et al.).
Extension of High-Temperature Electronics (B. Draper and D. Palmer).
Integrated Circuit Characteristics at 260°C for Aircraft Engine-Control Applications (L. Palkuti, et al.).
350°C CMOS Logic Process (J. Beasom, et al.).
Process Characteristics and Design Methods for a 300°C Quad Operational Amplifier (J. Beasom and R. Patterson III).
A High-Temperature Precision Amplifier (I. Finvers, et al.).
Design Considerations in High-Temperature Analog CMOS Integrated Circuits (F. Shoucair).
Scaling, Subthreshold, and Leakage Current Matching Characteristics in High-Temperature (25°C-250°C) VLSI CMOS Devices (F. Shoucair).
Scaling CMOS Design Rules for High-Temperature Latchup Immunity (R. Brown and K. Wu).
Integrated Injection Logic with Extended Temperature Range Capability (D. Dening, et al.).
Progress of High-Temperature Silicon Integrated Injection Logic (M. Migitaka and H. Naito).
High-Temperature Behavior of MOS Devices (J. Kronberg).
High-Temperature Operation of nMOSFET on Bonded SOI (Y. Arimoto).
Silicon-on-insulator Technology for High-Temperature Metal Oxide Semiconductor Devices and Circuits (D. Flandre).
High-Temperature Silicon-on-insulator Electronics for Space Nuclear Power Systems: Requirements and Feasibility (D. Fleetwood, et al.).
A MOS Switched-Capacitor Ladder Filter in SIMOX Technology for High-Temperature Applications up to 300° C (M. Verbeck, et al.).
The Effect of Temperature on Lateral DMOS Transistors in a Power IC Technology (G. Dolny, et al.).
200°C Operation of Semiconductor Power Devices (R. Johnson, et al.).
MEDIUM-BANDGAP SEMICONDUCTOR MATERIALS AND DEVICES.
Introduction (P. Dreike and T. Zipperian).
Compound Semiconductors for High-Temperature Electronic Applications (T. Zipperian and R. Chaffin).
Fabrication and High-Temperature Characteristics of Ion-implanted GaAs Bipolar Transistors and Ring-oscillators (F. Doerbeck, et al.).
Microwave Characterization and Comparison of Performance of GaAs Based MESFETs, HEMTs and HBTs Operating at High Ambient Temperatures (K. Fricke, et al.).
Evaluation of Al_xGa_1-x) As for High-Temperature Electronic Junction Device Applications (T. Zipperian, et al.).
A GaAs Integrated Differential Amplifier for Operation up to 300°C (G. Schweeger, et al.).
AlGaAs/GaAs/AlGaAs DHBT's for High-Temperature Stable Circuits (K. Fricke, et al.).
Technology Towards GaAs MESFET-based IC for High-Temperature Applications (J. Würfl and B. Janke).
High-Temperature Electronics Using Complementary Heterostructure FET (CHFET) Technology (S. Baier, et al.).
Low Leakage GaAs MESFET Devices Operating to 350°C Ambient Temperature (R. Lee, et al.).
Modelling III-V Devices Operating at 300-400°C (C. Wilson and A. O'Neill).
High-Temperature Performance and Operation of HFET's (C. Wilson, et al.).
Recent Advances in Gallium Phosphide Junction Devices for High-Temperature Electronic Applications (T. Zipperian, et al.).
A GaP MESFET for High-Temperature Applications (M. Weichold, et al.).
High-Temperature Gallium Phosphide Field Effect Transistors (Y. Zhilyaev, et al.).
High-Temperature Characteristics of A1As/GaAs/A1As Resonant Tunneling Diodes (M. Deen).
LARGE-BANDGAP SEMICONDUCTOR MATERIALS AND DEVICES.
Introduction (R. Davis).
High-Temperature Point-contact Transistors and Schottky Diodes Formed on Synthetic Boron-doped Diamond (M. Geis, et al.).
Diamond Thin-film Recessed Gate Field-Effect Transistors Fabricated by Electron Cyclotron Resonance Plasma Etching (S. Grot, et al.).
Diamond Field-Effect Transistors (D. Dreifus, et al.).
High-Temperature dc and RF Performance of p-type Diamond MESFET: Comparison with n-type GaAs MESFET (M. Shin, et al.).
Cubic Boron Nitride pn Junction Diode Made at High Pressure as a High-Temperature Diode and an Ultraviolet LED (O. Mishima, et al.).
GaN FETs for Microwave and High-Temperature Applications (S. Binari, et al.).
GaN Based Transistors for High-Temperature Applications (M. Khan and M. Shur).
500°C Operation of a GaN/SiC Heterojunction Bipolar Transistor (S. Chang, et al.).
Whatever Happened to Silicon Carbide (R. Campbell).
Characterization of Device Parameters in High-Temperature Metal-Oxide-Semiconductor Field-Effect Transistors in β-SiC Thin Films (J. Palmour, et al.).
Status of Silicon Carbide (SiC) as a Wide-Bandgap Semiconductor for High-Temperature Applications: A Review (J. Casady and R. Johnson).
Analysis of Silicon Carbide Power Device Performance (M. Bhatnagar and B. Baliga).
Analysis of Neutron Damage in High-Temperature Silicon Carbide JFETs (F. McLean, et al.).
Dynamic Charge Storage in 6H Silicon Carbide (C. Gardner, et al.).
Monolithic NMOS Digital Integrated Circuits in 6H-SiC (W. Xie, et al.).
METALLIZATIONS FOR SEMICONDUCTOR DEVICES.
Introduction (E. Kolawa).
Amorphous Metallizations for High-Temperature Semiconductor Device Applications (J. Wiley, et al.).
Reliability of High-Temperature I²L Integrated Circuits (D. Dening, et al.).
Gallium Phosphide Devices (O. Eknoyan, et al.).
Reliability of High-Temperature Metallizations with Amorphous Ternary Diffusion Barriers (E. Kolawa, et al).
Metal-GaAs Interaction and Contact Degradation in Microwave MESFETs (E. Zanoni, et al.).
A New GaAs Technology for Stable FET's at 300°C (K. Fricke, et al.).
New Technology Developments for III-V Semiconductor Devices Operating Above 300°C (K. Fricke, et al.).
Refractory Self-Aligned-Gate GaAs FET Based Circuit Technology for High Ambient Temperatures (S. Swirhun, et al.).
High-Temperature Ohmic and Schottky Contacts to N-Type 6H-SiC Using Nickel (J. Williams, et al.).
High-Temperature Contacts to Chemically Vapour Deposited Diamond Films—Reliability Issues (C. Johnston, et al.).
PASSIVE COMPONENTS.
Introduction (R. Kirschman).
Batteries for High-Temperature Electronics (W. Clark).
Hybrid Microcircuitry for 300° Operation (D. Palmer).
Investigations in Thick Film Components for High-Temperature Systems (R. Dittmann, et al.).
Fabrication of Passive Components for High-Temperature Instrumentation (L. Raymond, et al.).
Thermal Degradation and Termination Behavior of Thick Film Resistors (T. Nordstrom).
Thermal Aging of Thick-Film Resistors (B. Morten and M. Prudenziati).
Electrical Characterization of Glass, Teflon, and Tantalum Capacitors at High-Temperatures (A. Hammoud, et al.).
Development of Temperature-Stable Thick-Film Dielectrics: II. Medium-K Dielectric (B.-S. Chiou).
High-Temperature Performance of Polymer Film Capacitors (R. Grzybowski and F. McCluskey).
Materials for 300-500°C Magnetic Components (M. Weichold, et al.).
A Zero-Insertion-Force Hybrid Circuit Connector for Severe Environments (P. Sinclair).
HYBRID MATERIALS, ASSEMBLY, AND PACKAGING.
Introduction (R. Johnson).
Pushing the Limit—The Rise of High-Temperature Electronics (P. McCluskey and M. Pecht).
Metallurgical Bonding Systems for High-Temperature Electronics (G. Harman)
High-Temperature Electronics Packaging (D. Palmer).
Extreme Temperature Range Microelectronics (D. Palmer and R. Heckman).
A-55°C to + 200°C 12-bit Analog-to-Digital Converter (P. Prazak).
Hybrid A/D Converter for 200°C Operation (M. Sullivan and J. Toth).
High-Temperature Hybrids for Use up to 275°C—Drift and Lifetime (A. Veneruso, et al.).
A Hybrid Silicon Carbide Differential Amplifier for 350°C Operation (M. Tomana, et al.).
High-Temperature Aluminum Nitride Packaging (T. Martin and T. Bloom).
High-Temperature Applications for IC Plastic Encapsulated Packages (A. Chen and R. Lo).
Electronics Packaging and Test Fixturing for the 500° C Environment. (R. Grzybowski and M. Gericke).
ALTERNATIVE TECHNOLOGIES.
Introduction (R. Kirschman).
Design Approaches for Core Memories Operating to 200°C (B. Kaufman).
Thermionic Integrated Micromodules (J. Beggs, et al.).
Tube Design News (General Electric).
Development of Integrated Thermionic Circuits for High-Temperature Applications (J. McCormick, et al.).
An Electrochemical Transistor Using a Solid Electrolyte (R. Hetrick, et al.).
BIBLIOGRAPHY (R. Kirschman).
Author Index.
Subject Index.
Reprint Reference-Code Index.
Editor's Biography.

商品描述(中文翻譯)

描述：
高溫電子學提供了對於在超過傳統限制125°C的溫度下，電子設備和電路的應用、特性、設計、選擇和操作的專業覆蓋。本書包含約100篇關鍵的重印論文，涵蓋與高溫電子學相關的廣泛主題，九個章節介紹，八篇邀請論文，廣泛的參考文獻，以及全面的書目。它為讀者提供了高溫電子學的全面回顧，從幾十年前的起源到現在及未來可能的技術。高溫電子學的範疇包括來自標準和先進半導體材料的主動元件、被動元件，以及金屬化、互連和電子元件的組裝與封裝技術。本書將為活躍的研究人員、技術開發者、管理者、材料科學家和高級學生提供高溫電子學技術的基本知識。

目錄：
前言。
序言。
致謝。
一般介紹。
一般介紹（R. Kirschman）。
未來飛機引擎數位電子控制系統的高溫電子學特性（J. Wiley 和 D. Dening）。
高溫電子學研究與開發的總結（F. Thome 和 D. King）。
高溫電子設備技術及潛在應用概述（P. Dreike 等）。
高溫電子學應用中的矽和砷化鎵（J. Klein）。
溫度對集成電路失效機制的影響（M. Pecht 等）。
半導體設備和電路在寬溫度操作中的可靠性問題評估（J. Kopanski 等）。
高溫碳化矽電子設備（西屋公司）。
IC的熱時間（N. Mokhoff）。
抗熱混合電路準備上市（L. Lowe）。
開發的高溫晶體管和可控矽整流器。
高溫電子學和傳感器。
新型晶體管耐高溫。
應用、需求和替代方案。
介紹（F. Thomê 和 D. King）。
熱保護方法在熱井中的電子學應用（G. Bennett）。
服務公司需求（P. Sinclair）。
油井測井行業對高溫電子學的當前和未來需求（N. Sanders）。
地熱能的高溫電子學（A. Veneruso）。
航空推進系統中的高溫電子要求（W. Nieberding 和 J. Powell）。
未來高速運輸中高溫電子學的要求（C. Carlin 和 J. Ray）。
汽車的高溫電子學（M. Tamor）。
高溫汽車電子學：概述（J. Erskine 等）。
太空探索中的高溫電子學應用（R. Jurgens）。
日本高溫電子學研究活動及其在太空探索中的未來應用（M. Tajima）。
無線、容器內中子監測器，用於先進增殖反應堆的初始核心裝載（J. DeLorenzi 等）。
最大允許有效載荷溫度對多兆瓦太空平台質量的影響（D. Dobranich）。
矽設備和集成電路。
介紹（F. Shoucair）。
高溫矽二極體模型（E. Clarke 等）。
高溫微電子學——擴展智能傳感器的應用（R. Brown 等）。
高溫電子學的擴展（B. Draper 和 D. Palmer）。
航空引擎控制應用中260°C的集成電路特性（L. Palkuti 等）。
350°C CMOS邏輯工藝（J. Beasom 等）。
300°C四運算放大器的工藝特性和設計方法（J. Beasom 和 R. Patterson III）。
高溫精密放大器（I. Finvers 等）。
高溫類比CMOS集成電路的設計考量（F. Shoucair）。
高溫（25°C-250°C）VLSI CMOS設備中的縮放、亞閾值和漏電流匹配特性（F. Shoucair）。
高溫鎖存免疫的CMOS設計規則縮放（R. Brown 和 K. Wu）。
具有擴展溫度範圍能力的集成注入邏輯（D. Dening 等）。
高溫矽集成注入邏輯的進展（M. Migitaka 和 H. Naito）。
MOS設備的高溫行為（J. Kronberg）。
在鍵合SOI上運行的nMOSFET的高溫操作（Y. Arimoto）。
高溫金屬氧化物半導體設備和電路的矽絕緣體技術（D. Flandre）。
太空核能系統的高溫矽絕緣體電子學：要求和可行性（D. Fleetwood 等）。
在SIMOX技術中用於高溫應用的MOS開關電容梯形濾波器，最高可達300°C（M. Verbeck 等）。
溫度對功率IC技術中橫向DMOS晶體管的影響（G. Dolny 等）。
半導體功率設備的200°C操作（R. Johnson 等）。
中帶隙半導體材料和設備。
介紹（P. Dreike 和 T. Zipperian）。
高溫電子應用的化合物半導體（T. Zipperian 和 R. Chaffin）。
離子植入GaAs雙極晶體管和環形振盪器的製造及高溫特性（F. Doerbeck 等）。
高溫環境下GaAs基MESFET、HEMT和HBT的微波特性和性能比較（K. Fricke 等）。
高溫電子接合設備應用的AlxGa1-xAs評估（T. Zipperian 等）。
可在300°C下運行的GaAs集成差分放大器（G. Schweeger 等）。
高溫穩定電路的AlGaAs/GaAs/AlGaAs DHBT（K. Fricke 等）。
針對高溫應用的GaAs MESFET基IC技術（J. Würfl 和 B. Janke）。
使用互補異質結FET（CHFET）技術的高溫電子學（S. Baier 等）。
在350°C環境溫度下運行的低漏電GaAs MESFET設備（R. Lee 等）。
在300-400°C下運行的III-V設備建模（C. Wilson 和 A. O'Neill）。
HFET的高溫性能和操作（C. Wilson 等）。
最近在高溫電子應用中對磷化鎵接合設備的進展（T. Zipperian 等）。
用於高溫應用的GaP MESFET（M. Weichold 等）。
高溫磷化鎵場效應晶體管（Y. Zhilyaev 等）。
A1As/GaAs/A1As共振隧道二極體的高溫特性（M. Deen）。
大帶隙半導體材料和設備。
介紹（R. Davis）。
在合成掺硼金剛石上形成的高溫點接觸晶體管和肖特基二極體（M. Geis 等）。
通過電子回旋共振等離子體蝕刻製造的金剛石薄膜凹槽閘場效應晶體管（S. Grot 等）。
金剛石場效應晶體管（D. Dreifus 等）。
p型金剛石MESFET的高溫直流和射頻性能：與n型GaAs MESFET的比較（M. Shin 等）。
在高壓下製作的立方氮化硼pn接合二極體，作為高溫二極體和紫外LED（O. Mishima 等）。
用於微波和高溫應用的GaN FET（S. Binari 等）。
用於高溫應用的GaN基晶體管（M. Khan 和 M. Shur）。
GaN/SiC異質結雙極晶體管的500°C操作（S. Chang 等）。
矽碳化物的命運（R. Campbell）。
在β-SiC薄膜中高溫金屬氧化物半導體場效應晶體管的設備參數特性。