Silicon RF Power Mosfets (Hardcover)
暫譯: 矽RF功率MOSFETs(精裝版)

B Jayant Baliga

  • 出版商: World Scientific Pub
  • 出版日期: 2005-04-22
  • 售價: $1,650
  • 貴賓價: 9.8$1,617
  • 語言: 英文
  • 頁數: 302
  • 裝訂: Hardcover
  • ISBN: 9812561218
  • ISBN-13: 9789812561213
  • 下單後立即進貨 (約5~7天)

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商品描述

Description

The world-wide proliferation of cellular networks has revolutionized telecommunication systems. The transition from Analog to Digital RF technology enabled substantial increase in voice traffic using available spectrum, and subsequently the delivery of digitally based text messaging, graphics and even streaming video. The deployment of digital networks has required migration to multi-carrier RF power amplifiers with stringent demands on linearity and efficiency. This book describes the physics, design considerations and RF performance of silicon power Metal-Oxide- Semiconductor Field Effect Transistors (MOSFETs) that are at the heart of the power amplifiers. The recent invention and commercialization of RF power MOSFETs based on the super-linear mode of operation is described in this book for the first time. In addition to the analytical treatment of the physics, extensive description of transistor operation is provided by using the results of numerical simulations. Many novel power MOSFET structures are analyzed and their performance is compared with those of the laterally-diffused (LD) MOSFET that are currently used in 2G and 3G networks.

 

Table of contents

  • RF Power Amplifiers
  • MOSFET Physics
  • Lateral-Diffused MOSFETs
  • Vertical-Diffused MOSFETs
  • Charge-Coupled MOSFETs
  • Super-Linear MOSFETs
  • Planar Super-Linear MOSFETs
  • Dual Trench MOSFETs
  • Hot Carrier Injection Instability
  • Synopsis



商品描述(中文翻譯)

**描述**

全球行動網路的普及徹底改變了電信系統。從類比技術轉向數位射頻(RF)技術,使得在可用頻譜上語音流量大幅增加,隨後也實現了基於數位的簡訊、圖形甚至串流視頻的傳輸。數位網路的部署要求轉向多載波射頻功率放大器,對線性度和效率有著嚴格的要求。本書描述了矽基金屬氧化物半導體場效應電晶體(MOSFET)的物理特性、設計考量及射頻性能,這些電晶體是功率放大器的核心。本書首次介紹了基於超線性操作模式的射頻功率MOSFET的最新發明和商業化。此外,除了對物理特性的分析處理外,還通過數值模擬的結果提供了對電晶體操作的詳細描述。許多新穎的功率MOSFET結構被分析,並將其性能與目前在2G和3G網路中使用的側向擴散(LD)MOSFET進行比較。

**目錄**

- 射頻功率放大器
- MOSFET物理
- 側向擴散MOSFET
- 垂直擴散MOSFET
- 充電耦合MOSFET
- 超線性MOSFET
- 平面超線性MOSFET
- 雙溝槽MOSFET
- 熱載子注入不穩定性
- 摘要