Iii-Nitride Semiconductor Materials
暫譯: 氮化物半導體材料
Claudi Alsina
- 出版商: Imperial College Pre
- 出版日期: 2006-03-20
- 售價: $1,580
- 貴賓價: 9.8 折 $1,548
- 語言: 英文
- 頁數: 428
- 裝訂: Hardcover
- ISBN: 1860946364
- ISBN-13: 9781860946363
-
相關分類:
半導體
下單後立即進貨 (約5~7天)
買這商品的人也買了...
-
$764Semiconductor Heterojunctions and Nanostructures (平裝)
-
$580$452 -
$850$723 -
$480$379 -
$1,190$1,166 -
$860$731 -
$420$332 -
$680$537 -
$580$493 -
$530$419 -
$890$757 -
$490$387 -
$750$593 -
$560$442 -
$520$411 -
$1,230$1,169 -
$490$382 -
$600$474 -
$560$442 -
$450$356 -
$520$411 -
$580$458 -
$850$723 -
$580$458 -
$750$593
相關主題
商品描述
III-Nitride semiconductor materials — (Al, In, Ga)N — are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved recently, and current knowledge and data published have to be modified and upgraded. This book presents the new developments and achievements in the field. Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory or experiment. The III-Nitride-based industry is building up and new economic developments from these materials are promising. It is expected that III-Nitride-based LEDs may replace traditional light bulbs to realize a revolution in lighting. This book is a valuable source of information for engineers, scientists and students working towards such goals.
商品描述(中文翻譯)
III-氮化物半導體材料 — (Al, In, Ga)N — 是非常適合現代電子和光電子應用的優秀寬帶隙半導體。最近取得了顯著的突破,目前已發表的知識和數據需要進行修改和升級。本書介紹了該領域的新發展和成就。
本書由知名專家撰寫,回顧章節涵蓋了近年來最重要的主題和成就,討論了不同團隊所取得的進展,並建議未來的方向。每一章還描述了理論或實驗的基礎。
基於III-氮化物的產業正在建立中,這些材料的新經濟發展前景可期。預計基於III-氮化物的LED可能會取代傳統燈泡,實現照明革命。本書是工程師、科學家和學生朝著這些目標努力的寶貴資訊來源。