Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics
暫譯: 分子束外延:電子學與光電學的材料與應用

Asahi, Hajime, Horikoshi, Yoshiji

  • 出版商: Wiley
  • 出版日期: 2019-04-15
  • 售價: $8,090
  • 貴賓價: 9.5$7,686
  • 語言: 英文
  • 頁數: 512
  • 裝訂: Hardcover - also called cloth, retail trade, or trade
  • ISBN: 111935501X
  • ISBN-13: 9781119355014
  • 海外代購書籍(需單獨結帳)

相關主題

商品描述

Covers both the fundamentals and the state-of-the-art technology used for MBE

Written by expert researchers working on the frontlines of the field, this book covers fundamentals of Molecular Beam Epitaxy (MBE) technology and science, as well as state-of-the-art MBE technology for electronic and optoelectronic device applications. MBE applications to magnetic semiconductor materials are also included for future magnetic and spintronic device applications.

Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics is presented in five parts: Fundamentals of MBE; MBE technology for electronic devices application; MBE for optoelectronic devices; Magnetic semiconductors and spintronics devices; and Challenge of MBE to new materials and new researches. The book offers chapters covering the history of MBE; principles of MBE and fundamental mechanism of MBE growth; migration enhanced epitaxy and its application; quantum dot formation and selective area growth by MBE; MBE of III-nitride semiconductors for electronic devices; MBE for Tunnel-FETs; applications of III-V semiconductor quantum dots in optoelectronic devices; MBE of III-V and III-nitride heterostructures for optoelectronic devices with emission wavelengths from THz to ultraviolet; MBE of III-V semiconductors for mid-infrared photodetectors and solar cells; dilute magnetic semiconductor materials and ferromagnet/semiconductor heterostructures and their application to spintronic devices; applications of bismuth-containing III-V semiconductors in devices; MBE growth and device applications of Ga2O3; Heterovalent semiconductor structures and their device applications; and more.

  • Includes chapters on the fundamentals of MBE
  • Covers new challenging researches in MBE and new technologies
  • Edited by two pioneers in the field of MBE with contributions from well-known MBE authors including three Al Cho MBE Award winners
  • Part of the Materials for Electronic and Optoelectronic Applications series

Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics will appeal to graduate students, researchers in academia and industry, and others interested in the area of epitaxial growth.

商品描述(中文翻譯)

涵蓋了分子束外延(MBE)的基本原理和最先進的技術

本書由在該領域前線工作的專家研究人員撰寫,涵蓋了分子束外延(Molecular Beam Epitaxy, MBE)技術和科學的基本原理,以及用於電子和光電裝置應用的最先進MBE技術。書中還包括了MBE在磁性半導體材料中的應用,以應對未來的磁性和自旋電子裝置應用。

分子束外延:電子和光電材料及應用分為五個部分:MBE的基本原理;用於電子裝置應用的MBE技術;用於光電裝置的MBE;磁性半導體和自旋電子裝置;以及MBE對新材料和新研究的挑戰。本書提供了涵蓋MBE歷史的章節;MBE的原理及其生長的基本機制;遷移增強外延及其應用;量子點形成及MBE的選擇性區域生長;用於電子裝置的III族氮化物半導體的MBE;用於隧道場效應晶體管(Tunnel-FETs)的MBE;III-V族半導體量子點在光電裝置中的應用;用於光電裝置的III-V族和III族氮化物異質結構,發射波長從THz到紫外線;用於中紅外光電探測器和太陽能電池的III-V族半導體的MBE;稀磁半導體材料及其自旋電子裝置的鐵磁/半導體異質結構及其應用;含鉍的III-V族半導體在裝置中的應用;Ga2O3的MBE生長及裝置應用;異價半導體結構及其裝置應用;等等。


  • 包括MBE基本原理的章節

  • 涵蓋MBE中的新挑戰性研究和新技術

  • 由MBE領域的兩位先驅編輯,並有三位Al Cho MBE獎得主等知名MBE作者的貢獻

  • 為電子和光電應用材料系列的一部分

分子束外延:電子和光電材料及應用將吸引研究生、學術界和產業界的研究人員,以及對外延生長領域感興趣的其他人。

作者簡介

Series Editors

Arthur Willoughby University of Southampton, Southampton, UK

Peter Capper formerly of SELEX Galileo Infrared Ltd, Southampton, UK

Safa Kasap University of Saskatchewan, Saskatoon, Canada

Edited by Hajime Asahi Emeritus Professor, Osaka University, Japan

Yoshiji Horikoshi Emeritus Professor, Waseda University, Tokyo, Japan

作者簡介(中文翻譯)

系列編輯
**亞瑟·威洛比** 英國南安普敦大學
**彼得·卡珀** 前南安普敦SELEX Galileo紅外線有限公司
**薩法·卡薩普** 加拿大薩斯喀徹溫大學
編輯 **朝日肇** 日本大阪大學名譽教授
**堀越義治** 日本早稻田大學名譽教授