Epitaxy of Semiconductors: Physics and Fabrication of Heterostructures
暫譯: 半導體的外延生長：異質結構的物理與製造
Pohl, Udo W.
- 出版商: Springer
- 出版日期: 2021-07-22
- 售價: $2,990
- 貴賓價: 9.5 折 $2,841
- 語言: 英文
- 頁數: 535
- 裝訂: Quality Paper - also called trade paper
- ISBN: 3030438716
- ISBN-13: 9783030438715
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相關分類:
半導體、物理學 Physics
海外代購書籍(需單獨結帳)
商品描述
The extended and revised edition of this textbook provides essential information for a comprehensive upper-level graduate course on the crystalline growth of semiconductor heterostructures. Heteroepitaxy is the basis of today's advanced electronic and optoelectronic devices, and it is considered one of the most important fields in materials research and nanotechnology. The book discusses the structural and electronic properties of strained epitaxial layers, the thermodynamics and kinetics of layer growth, and it describes the major growth techniques: metalorganic vapor-phase epitaxy, molecular-beam epitaxy, and liquid-phase epitaxy. It also examines in detail cubic and hexagonal semiconductors, strain relaxation by misfit dislocations, strain and confinement effects on electronic states, surface structures, and processes during nucleation and growth. Requiring only minimal knowledge of solid-state physics, it provides natural sciences, materials science and electrical engineering students and their lecturers elementary introductions to the theory and practice of epitaxial growth, supported by references and over 300 detailed illustrations. In this second edition, many topics have been extended and treated in more detail, e.g. in situ growth monitoring, application of surfactants, properties of dislocations and defects in organic crystals, and special growth techniques like vapor-liquid-solid growth of nanowires and selective-area epitaxy.
商品描述(中文翻譯)
這本教科書的擴展和修訂版提供了有關半導體異質結構晶體生長的綜合高級研究生課程的基本資訊。異質外延（Heteroepitaxy）是當今先進電子和光電子設備的基礎，並被視為材料研究和奈米技術中最重要的領域之一。本書討論了應變外延層的結構和電子特性、層生長的熱力學和動力學，並描述了主要的生長技術：金屬有機氣相外延（metalorganic vapor-phase epitaxy）、分子束外延（molecular-beam epitaxy）和液相外延（liquid-phase epitaxy）。它還詳細檢視了立方體和六角形半導體、由不匹配位錯引起的應變鬆弛、應變和限制效應對電子態的影響、表面結構以及在成核和生長過程中的過程。本書僅需具備最基本的固態物理知識，為自然科學、材料科學和電機工程的學生及其講師提供了外延生長理論和實踐的基本介紹，並附有參考文獻和超過300幅詳細插圖。在第二版中，許多主題得到了擴展並更詳細地處理，例如原位生長監測、表面活性劑的應用、有機晶體中位錯和缺陷的特性，以及特殊的生長技術，如奈米線的氣-液-固（vapor-liquid-solid）生長和選擇性區域外延（selective-area epitaxy）。
作者簡介
Dr. rer. nat. Udo W. Pohl, professor of experimental physics, studied physics in Aachen and Berlin, Germany, and received his Ph.D. degree in 1988 from the Technical University of Berlin, where he is currently principal investigator in the Institute of Solid State Physics. He is a member of the German Physical Society, participated in international conference committees, and has given keynote addresses at international conferences. Since the early 1990ies he has given lectures on semiconductor physics and epitaxy. In 2009, he was appointed Adjunct Professor of Physics at Technical University of Berlin. He is series editor of Materials Sciences, has authored over 200 journal articles and conference papers, the books Epitaxy of Semiconductors and - together with Prof. Dr. Karl W. Böer - Semiconductor Physics, thirteen book contributions, and patents. His current research interests include physics and epitaxy of semiconductor nanostructures and devices.
作者簡介(中文翻譯)
德國亞琛和柏林的實驗物理學教授 Udo W. Pohl 博士，於1988年在柏林工業大學獲得博士學位，目前是固態物理研究所的主要研究員。他是德國物理學會的成員，參與國際會議委員會，並在國際會議上發表過主題演講。自1990年代初以來，他一直在半導體物理和外延生長方面進行講座。2009年，他被任命為柏林工業大學的兼任物理教授。他是《材料科學》系列的編輯，已發表超過200篇期刊文章和會議論文，著作包括《半導體的外延生長》和與 Karl W. Böer 教授共同編寫的《半導體物理》，以及十三篇書籍貢獻和專利。他目前的研究興趣包括半導體納米結構和器件的物理及外延生長。
