Compound Semiconductor Materials and Devices
Zhaojun Liu, Tongde Huang, Qiang Li
- 出版商: Morgan & Claypool
- 出版日期: 2016-02-22
- 售價: $1,410
- 貴賓價: 9.5 折 $1,340
- 語言: 英文
- 頁數: 74
- 裝訂: Paperback
- ISBN: 1627058524
- ISBN-13: 9781627058520
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相關分類:
半導體
海外代購書籍(需單獨結帳)
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商品描述
Ever since its invention in the 1980s, the compound semiconductor heterojunction-based high electron mobility transistor (HEMT) has been widely used in radio frequency (RF) applications. This book provides readers with broad coverage on techniques and new trends of HEMT, employing leading compound semiconductors, III-N and III-V materials. The content includes an overview of GaN HEMT device-scaling technologies and experimental research breakthroughs in fabricating various GaN MOSHEMT transistors. Readers are offered an inspiring example of monolithic integration of HEMT with LEDs, too. The authors compile the most relevant aspects of III-V HEMT, including the current status of state-of-art HEMTs, their possibility of replacing the Si CMOS transistor channel, and growth opportunities of III-V materials on an Si substrate. With detailed exploration and explanations, the book is a helpful source suitable for anyone learning about and working on compound semiconductor devices.
商品描述(中文翻譯)
自從1980年代發明以來,基於化合物半導體異質接面技術的高電子遷移率晶體管(HEMT)已廣泛應用於射頻(RF)領域。本書為讀者提供了有關HEMT技術和新趨勢的廣泛介紹,採用領先的化合物半導體、III-N和III-V材料。內容包括GaN HEMT器件縮放技術的概述以及在製造各種GaN MOSHEMT晶體管方面的實驗研究突破。讀者還將看到HEMT與LED的單片集成的啟發性範例。作者彙編了III-V HEMT的最相關方面,包括當前最先進HEMT的狀態、它們取代Si CMOS晶體管通道的可能性,以及在Si基板上生長III-V材料的機會。透過詳細的探索和解釋,本書是任何學習和從事化合物半導體器件工作的人士的有用資源。