商品描述
Responding to recent developments and a growing VLSI circuit manufacturing market, Technology Computer Aided Design: Simulation for VLSI MOSFET examines advanced MOSFET processes and devices through TCAD numerical simulations. The book provides a balanced summary of TCAD and MOSFET basic concepts, equations, physics, and new technologies related to TCAD and MOSFET. A firm grasp of these concepts allows for the design of better models, thus streamlining the design process, saving time and money. This book places emphasis on the importance of modeling and simulations of VLSI MOS transistors and TCAD software. Providing background concepts involved in the TCAD simulation of MOSFET devices, it presents concepts in a simplified manner, frequently using comparisons to everyday-life experiences. The book then explains concepts in depth, with required mathematics and program code. This book also details the classical semiconductor physics for understanding the principle of operations for VLSI MOS transistors, illustrates recent developments in the area of MOSFET and other electronic devices, and analyzes the evolution of the role of modeling and simulation of MOSFET. It also provides exposure to the two most commercially popular TCAD simulation tools Silvaco and Sentaurus.
- Emphasizes the need for TCAD simulation to be included within VLSI design flow for nano-scale integrated circuits
- Introduces the advantages of TCAD simulations for device and process technology characterization
- Presents the fundamental physics and mathematics incorporated in the TCAD tools
- Includes popular commercial TCAD simulation tools (Silvaco and Sentaurus)
- Provides characterization of performances of VLSI MOSFETs through TCAD tools
- Offers familiarization to compact modeling for VLSI circuit simulation
R&D cost and time for electronic product development is drastically reduced by taking advantage of TCAD tools, making it indispensable for modern VLSI device technologies. They provide a means to characterize the MOS transistors and improve the VLSI circuit simulation procedure. The comprehensive information and systematic approach to design, characterization, fabrication, and computation of VLSI MOS transistor through TCAD tools presented in this book provides a thorough foundation for the development of models that simplify the design verification process and make it cost effective.
商品描述(中文翻譯)
回應近期的發展以及日益增長的 VLSI 電路製造市場，技術電腦輔助設計：VLSI MOSFET 的模擬 通過 TCAD 數值模擬探討先進的 MOSFET 製程和設備。本書提供了 TCAD 和 MOSFET 基本概念、方程式、物理學及與 TCAD 和 MOSFET 相關的新技術的平衡總結。對這些概念的牢固掌握能夠設計出更好的模型，從而簡化設計過程，節省時間和金錢。本書強調 VLSI MOS 晶體管和 TCAD 軟體的建模和模擬的重要性。提供與 MOSFET 設備的 TCAD 模擬相關的背景概念，以簡化的方式呈現這些概念，並經常使用與日常生活經驗的比較。然後，本書深入解釋這些概念，並包含所需的數學和程式碼。本書還詳細介紹了經典半導體物理，以理解 VLSI MOS 晶體管的操作原理，說明了 MOSFET 和其他電子設備領域的最新發展，並分析了 MOSFET 建模和模擬角色的演變。它還介紹了兩個最受商業歡迎的 TCAD 模擬工具 Silvaco 和 Sentaurus。
- 強調在納米級集成電路的 VLSI 設計流程中納入 TCAD 模擬的必要性
- 介紹 TCAD 模擬在設備和製程技術特徵化中的優勢
- 提出 TCAD 工具中包含的基本物理學和數學
- 包含流行的商業 TCAD 模擬工具（Silvaco 和 Sentaurus）
- 通過 TCAD 工具提供 VLSI MOSFET 性能的特徵化
- 提供對 VLSI 電路模擬的緊湊建模的熟悉
利用 TCAD 工具大幅降低電子產品開發的研發成本和時間，使其對現代 VLSI 設備技術不可或缺。它們提供了一種特徵化 MOS 晶體管並改善 VLSI 電路模擬程序的方法。本書中通過 TCAD 工具呈現的 VLSI MOS 晶體管的設計、特徵化、製造和計算的全面信息和系統方法，為開發簡化設計驗證過程並使其具成本效益的模型提供了徹底的基礎。
作者簡介
Chandan Kumar Sarkar, is a professor of Electronics and Telecommunication, at Jadavpur University, Calcutta, India and a senior member of IEEE. He received B.Sc. (Hons.) and M.Sc. degrees in physics from Aligarh Muslim University, a Ph.D. degree in Radio Physics from the University of Calcutta, and the D.Phil degree from Oxford University. In 1980 Prof. Sarkar received the British Royal Commission Fellowship to work in Oxford University, worked as a visiting scientist in Max Planck Laboratory, Stuttgart, Germany as well as in Linko Pink University, Sweden. He has published more than 300 research papers for international journals and conferences.
作者簡介(中文翻譯)
查丹·庫馬·薩卡爾（Chandan Kumar Sarkar）是印度加爾各答的賈達夫普大學（Jadavpur University）電子與電信學教授，並且是IEEE的資深會員。他在阿里格爾穆斯林大學（Aligarh Muslim University）獲得物理學的學士（榮譽）和碩士學位，並在加爾各答大學獲得無線物理學的博士學位，之後在牛津大學獲得D.Phil學位。1980年，薩卡爾教授獲得英國皇家委員會獎學金，前往牛津大學工作，並曾在德國斯圖加特的馬克斯·普朗克實驗室（Max Planck Laboratory）及瑞典林科平大學（Linköping University）擔任訪問科學家。他已在國際期刊和會議上發表了超過300篇研究論文。
