Junctionless Field-Effect Transistors: Design, Modeling, and Simulation
暫譯: 無接面場效應晶體管:設計、建模與模擬

Shubham Sahay, Mamidala Jagadesh Kumar

  • 出版商: IEEE
  • 出版日期: 2019-02-27
  • 售價: $5,000
  • 貴賓價: 9.5$4,750
  • 語言: 英文
  • 頁數: 496
  • 裝訂: Hardcover - also called cloth, retail trade, or trade
  • ISBN: 1119523532
  • ISBN-13: 9781119523536
  • 海外代購書籍(需單獨結帳)

商品描述

A comprehensive one-volume reference on current JLFET methods, techniques, and research

Advancements in transistor technology have driven the modern smart-device revolution--many cell phones, watches, home appliances, and numerous other devices of everyday usage now surpass the performance of the room-filling supercomputers of the past. Electronic devices are continuing to become more mobile, powerful, and versatile in this era of internet-of-things (IoT) due in large part to the scaling of metal-oxide semiconductor field-effect transistors (MOSFETs). Incessant scaling of the conventional MOSFETs to cater to consumer needs without incurring performance degradation requires costly and complex fabrication process owing to the presence of metallurgical junctions. Unlike conventional MOSFETs, junctionless field-effect transistors (JLFETs) contain no metallurgical junctions, so they are simpler to process and less costly to manufacture.JLFETs utilize a gated semiconductor film to control its resistance and the current flowing through it. Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an inclusive, one-stop referenceon the study and research on JLFETs

This timely book covers the fundamental physics underlying JLFET operation, emerging architectures, modeling and simulation methods, comparative analyses of JLFET performance metrics, and several other interesting facts related to JLFETs. A calibrated simulation framework, including guidance on SentaurusTCAD software, enables researchers to investigate JLFETs, develop new architectures, and improve performance. This valuable resource:

  • Addresses the design and architecture challenges faced by JLFET as a replacement for MOSFET
  • Examines various approaches for analytical and compact modeling of JLFETs in circuit design and simulation
  • Explains how to use Technology Computer-Aided Design software (TCAD) to produce numerical simulations of JLFETs
  • Suggests research directions and potential applications of JLFETs

Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an essential resource for CMOS device design researchers and advanced students in the field of physics and semiconductor devices.

商品描述(中文翻譯)

關於當前無接面場效電晶體(JLFET)方法、技術和研究的綜合性單卷參考書

晶體管技術的進步推動了現代智慧裝置的革命——許多手機、手錶、家用電器及其他日常使用的設備現在的性能超越了過去佔據整個房間的超級電腦。在物聯網(IoT)時代,電子設備正變得越來越移動化、強大且多功能,這在很大程度上歸功於金屬氧化物半導體場效電晶體(MOSFET)的縮放。為了滿足消費者需求而不降低性能,傳統MOSFET的持續縮放需要昂貴且複雜的製造過程,這是由於存在冶金接面。與傳統MOSFET不同,無接面場效電晶體(JLFET)不包含冶金接面,因此它們的加工更簡單,製造成本更低。JLFET利用有閘極的半導體薄膜來控制其電阻和流過的電流。無接面場效電晶體:設計、建模與模擬是一本關於JLFET研究和學習的綜合性一站式參考書。

這本及時的書籍涵蓋了JLFET運作的基本物理學、新興架構、建模和模擬方法、JLFET性能指標的比較分析,以及與JLFET相關的幾個其他有趣事實。一個經過校準的模擬框架,包括對Sentaurus TCAD軟體的指導,使研究人員能夠研究JLFET,開發新架構並改善性能。這本寶貴的資源:


  • 解決JLFET作為MOSFET替代品所面臨的設計和架構挑戰

  • 檢視在電路設計和模擬中對JLFET進行分析和緊湊建模的各種方法

  • 解釋如何使用技術計算機輔助設計(TCAD)軟體來產生JLFET的數值模擬

  • 建議JLFET的研究方向和潛在應用

無接面場效電晶體:設計、建模與模擬是CMOS器件設計研究人員和物理學及半導體器件領域的高級學生的重要資源。

作者簡介

SHUBHAM SAHAY, PHD, is a Post-Doctoral Research Scholar in the Department of Electrical and Computer Engineering, University of California, Santa Barbara. He has authored several peer-reviewed journal articles on topics including semiconductor device design and modeling and unconventional applications of emerging non-volatile memories.

MAMIDALA JAGADESH KUMAR, PHD, is a Professor at the Indian Institute of Technology, New Delhi and Vice-Chancellor of Jawaharlal Nehru University, New Delhi. He is Editor-in-Chief of IETE Technical Review and has widely published in the area of Micro/Nanoelectronics.

作者簡介(中文翻譯)

**SHUBHAM SAHAY, PHD** 是加州大學聖塔巴巴拉分校電機與計算機工程系的博士後研究學者。他在半導體器件設計與建模以及新興非揮發性記憶體的非常規應用等主題上發表了多篇經過同行評審的期刊文章。

**MAMIDALA JAGADESH KUMAR, PHD** 是新德里印度理工學院的教授及新德里賈瓦哈拉爾·尼赫魯大學的副校長。他是 IETE 技術評論的主編,並在微/納電子學領域廣泛發表研究成果。