ESD in Silicon Integrated Circuits, 2/e
暫譯: 矽集成電路中的靜電放電，第二版

As high density circuits move deeper into submicron dimensions Electrostatic Discharge (ESD) effects become an increasing concern. This new edition of a classic reference presents a practical and systematic approach to ESD device physics, modelling and design techniques. The authors draw upon their wealth of industrial experience to provide a complete overview of ESD and its implications in the development of advanced integrated circuits.

Fully revised to incorporate the latest industry achievements and featuring:

• Design methods for a variety of technologies from 1 micron to the current sub-micron regimes, along with complete design approaches for MOS, BiCMOS and Power MOSFETs.

   

• New sections on ESD design rules, process technology effects, layout approaches, package effects and circuit simulations.

   

• Guidance on the implementation of circuit protection measures for a range of I/O configurations.

   

• Detailed coverage of ESD simulation stress models.

This unique reference provides the means to design protection circuits for a variety of applications and to diagnose and solve ESD problems in IC products. The coverage of state-of-the-art circuit design for ESD prevention will appeal to engineers and scientists working in the fields of IC and transistor design. Graduate students and researchers in device/circuit modeling and semiconductor reliability will appreciate this comprehensive coverage of ESD fundamentals.

Table of Contents

Preface

1. Introduction

2. ESD Phenomenon

3. Test Methods

4 Physics and Operation of ESD Protection Circuits Elements

5 ESD Protection Circuit Design Concepts and Strategy

6 Design and Layout Requirements

7 Advanced Protection Design

8 Failure Modes, Reliability Issues, and Case Studies

9 Influence of Processing on ESD

10 Device Modeling of High Current Effects

11 Circuit Simulation Basics, Approaches, and Applications

12 Conclusions

Index