Electrostatic Discharge Protection: Advances and Applications
暫譯: 靜電放電保護:進展與應用
Liou, Juin J.
- 出版商: CRC
- 出版日期: 2017-07-26
- 售價: $3,530
- 貴賓價: 9.5 折 $3,354
- 語言: 英文
- 裝訂: Quality Paper - also called trade paper
- ISBN: 1138893072
- ISBN-13: 9781138893078
海外代購書籍(需單獨結帳)
商品描述
Electrostatic discharge (ESD) is one of the most prevalent threats to electronic components. In an ESD event, a finite amount of charge is transferred from one object (i.e., human body) to another (i.e., microchip). This process can result in a very high current passing through the microchip within a very short period of time. Thus, more than 35 percent of single-event chip damages can be attributed to ESD events, and designing ESD structures to protect integrated circuits against the ESD stresses is a high priority in the semiconductor industry.
Electrostatic Discharge Protection: Advances and Applications delivers timely coverage of component- and system-level ESD protection for semiconductor devices and integrated circuits. Bringing together contributions from internationally respected researchers and engineers with expertise in ESD design, optimization, modeling, simulation, and characterization, this book bridges the gap between theory and practice to offer valuable insight into the state of the art of ESD protection.
Amply illustrated with tables, figures, and case studies, the text:
- Instills a deeper understanding of ESD events and ESD protection design principles
- Examines vital processes including Si CMOS, Si BCD, Si SOI, and GaN technologies
- Addresses important aspects pertinent to the modeling and simulation of ESD protection solutions
Electrostatic Discharge Protection: Advances and Applications provides a single source for cutting-edge information vital to the research and development of effective, robust ESD protection solutions for semiconductor devices and integrated circuits.
商品描述(中文翻譯)
靜電放電(Electrostatic discharge, ESD)是對電子元件最常見的威脅之一。在ESD事件中,有限的電荷從一個物體(例如,人類身體)轉移到另一個物體(例如,微晶片)。這個過程可能導致在非常短的時間內,微晶片中通過非常高的電流。因此,超過35%的單事件晶片損壞可以歸因於ESD事件,而設計ESD結構以保護集成電路免受ESD壓力的影響,是半導體行業的高優先事項。
《靜電放電保護:進展與應用》提供了對半導體設備和集成電路的元件和系統級ESD保護的及時報導。這本書匯集了國際上受尊敬的研究人員和工程師的貢獻,他們在ESD設計、優化、建模、模擬和特性化方面擁有專業知識,彌合了理論與實踐之間的鴻溝,提供了對ESD保護最前沿技術的寶貴見解。
本書配有豐富的表格、圖形和案例研究,內容包括:
- 深入理解ESD事件和ESD保護設計原則
- 檢視包括Si CMOS、Si BCD、Si SOI和GaN技術等重要過程
- 討論與ESD保護解決方案的建模和模擬相關的重要方面
《靜電放電保護:進展與應用》提供了一個單一來源,涵蓋對半導體設備和集成電路的有效、穩健的ESD保護解決方案的研究和開發至關重要的前沿資訊。
作者簡介
Juin J. Liou received his BS (honors), MS, and Ph.D in electrical engineering from the University of Florida, Gainesville, in 1982, 1983, and 1987, respectively. In 1987, he joined the University of Central Florida (UCF), Orlando, where he is now Pegasus distinguished professor, Lockheed Martin St. Laurent professor, and UCF-Analog Devices fellow. Highly decorated and widely published, Dr. Liou holds eight US patents (with five more pending) and several honorary professorships. He is a fellow of IEEE, IET, and Singapore Institute of Manufacturing Technology, and a distinguished lecturer in the IEEE Electron Device Society and National Science Council.
作者簡介(中文翻譯)
Juin J. Liou 於1982年、1983年和1987年分別在佛羅里達大學(University of Florida, Gainesville)獲得電機工程學士(榮譽)、碩士和博士學位。1987年,他加入了中佛羅里達大學(University of Central Florida, UCF),目前擔任佩加索斯傑出教授(Pegasus distinguished professor)、洛克希德·馬丁聖洛朗教授(Lockheed Martin St. Laurent professor)以及UCF-類比設備(UCF-Analog Devices)研究員。李教授獲得多項榮譽,並發表了大量學術文章,擁有八項美國專利(另有五項正在審核中)及數個榮譽教授職位。他是IEEE、IET及新加坡製造技術研究院的院士,並擔任IEEE電子器件學會(IEEE Electron Device Society)及國家科學委員會的傑出講師。