Metallic Spintronic Devices
暫譯: 金屬自旋電子裝置
Wang, Xiaobin
- 出版商: CRC
- 出版日期: 2017-03-29
- 售價: $3,790
- 貴賓價: 9.5 折 $3,601
- 語言: 英文
- 頁數: 274
- 裝訂: Quality Paper - also called trade paper
- ISBN: 113807232X
- ISBN-13: 9781138072329
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商品描述
Metallic Spintronic Devices provides a balanced view of the present state of the art of metallic spintronic devices, addressing both mainstream and emerging applications from magnetic tunneling junction sensors and spin torque oscillators to spin torque memory and logic. Featuring contributions from well-known and respected industrial and academic experts, this cutting-edge work not only presents the latest research and developments but also:
- Describes spintronic applications in current and future magnetic recording devices
- Discusses spin-transfer torque magnetoresistive random-access memory (STT-MRAM) device architectures and modeling
- Explores prospects of STT-MRAM scaling, such as detailed multilevel cell structure analysis
- Investigates spintronic device write and read optimization in light of spintronic memristive effects
- Considers spintronic research directions based on yttrium iron garnet thin films, including spin pumping, magnetic proximity, spin hall, and spin Seebeck effects
- Proposes unique solutions for low-power spintronic device applications where memory is closely integrated with logic
Metallic Spintronic Devices aims to equip anyone who is serious about metallic spintronic devices with up-to-date design, modeling, and processing knowledge. It can be used either by an expert in the field or a graduate student in course curriculum.
商品描述(中文翻譯)
《金屬自旋電子裝置》提供了對金屬自旋電子裝置當前技術狀態的平衡觀點，涵蓋了從磁隧道接面感測器和自旋扭矩振盪器到自旋扭矩記憶體和邏輯的主流及新興應用。這部前沿作品匯集了知名且受尊敬的產業和學術專家的貢獻，不僅展示了最新的研究和發展，還：
- 描述了當前和未來磁錄裝置中的自旋電子應用
- 討論了自旋轉移扭矩磁阻隨機存取記憶體（STT-MRAM）裝置架構和建模
- 探索了STT-MRAM縮放的前景，例如詳細的多層單元結構分析
- 研究了考量自旋電子記憶效應的自旋電子裝置寫入和讀取優化
- 考慮了基於釔鐵礦薄膜的自旋電子研究方向，包括自旋抽取、磁性接近、自旋霍爾和自旋塞貝克效應
- 提出了針對低功耗自旋電子裝置應用的獨特解決方案，該應用中記憶體與邏輯緊密集成
《金屬自旋電子裝置》旨在為任何對金屬自旋電子裝置認真對待的人提供最新的設計、建模和處理知識。無論是該領域的專家還是研究生課程中的學生均可使用。
作者簡介
Xiaobin Wang is director at Avalanche Technology and consultant at Caraburo Consulting LLC and Ingredients LLC. He holds a Ph.D from the University of California, San Diego. Dr. Wang has published over 100 articles and holds 50 US patents, approved or pending. He previously worked at Western Digital and Seagate Technology. His work in memory and data storage includes device design, advanced technology gap closure, prediction of system performance through bottom-up (from physics to system performance) and top-down (from system performance to component requirements) approaches, company product platform and basic technology roadmap modeling, new concept initiation, and intellectual property analysis.
作者簡介(中文翻譯)
王小彬是Avalanche Technology的總監，以及Caraburo Consulting LLC和Ingredients LLC的顧問。他擁有加州大學聖地牙哥分校的博士學位。王博士已發表超過100篇文章，並擁有50項美國專利，無論是已批准或待審核。他曾在Western Digital和Seagate Technology工作。他在記憶體和數據儲存方面的工作包括設備設計、先進技術差距的縮小、通過自下而上（從物理到系統性能）和自上而下（從系統性能到元件需求）的方法預測系統性能、公司產品平台和基本技術路線圖建模、新概念啟動以及知識產權分析。
