Spin Transfer Torque (Stt) Based Devices, Circuits, and Memory
暫譯: 基於自旋轉移力矩(STT)的裝置、電路與記憶體

Brajesh Kumar Kaushik

  • 出版商: Artech House Publish
  • 出版日期: 2016-10-31
  • 售價: $7,070
  • 貴賓價: 9.5$6,717
  • 語言: 英文
  • 頁數: 310
  • 裝訂: Hardcover
  • ISBN: 1630810916
  • ISBN-13: 9781630810917
  • 無法訂購

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商品描述

This first-of-its-kind resource is completely dedicated to spin transfer torque (STT) based devices, circuits, and memory. A wide range of topics including, STT MRAMs, MTJ based logic circuits, simulation and modeling strategies, fabrication of MTJ CMOS circuits, non-volatile computing with STT MRAMs, all spin logic, and spin information processing are explored. State-of-the-art modeling and simulation strategies of spin transfer torque based devices and circuits in a lucid manner are covered. Professional engineers find practical guidance in the development of micro-magnetic models of spin-torque based devices in object-oriented micro-magnetic framework (OOMMF) and compact modeling of STT based magnetic tunnel junctions in Verilog-A.

商品描述(中文翻譯)

這本首創的資源完全專注於基於自旋轉移力矩(spin transfer torque, STT)的裝置、電路和記憶體。涵蓋的主題範圍廣泛,包括 STT MRAM、基於 MTJ 的邏輯電路、模擬和建模策略、MTJ CMOS 電路的製造、使用 STT MRAM 的非易失性計算、全自旋邏輯以及自旋信息處理等。以清晰的方式介紹了基於自旋轉移力矩的裝置和電路的最先進建模和模擬策略。專業工程師在物件導向微磁框架(Object-Oriented Micro-Magnetic Framework, OOMMF)中開發基於自旋轉移的裝置的微磁模型,以及在 Verilog-A 中對 STT 基磁隧道接面進行緊湊建模時,能夠找到實用的指導。

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