Materials Science and Technology for Nonvolatile Memories: Volume 1071 (MRS Proceedings)
暫譯: 非揮發性記憶體的材料科學與技術:第1071卷(MRS會議錄)

  • 出版商: Cambridge
  • 出版日期: 2014-06-05
  • 售價: $1,600
  • 貴賓價: 9.5$1,520
  • 語言: 英文
  • 頁數: 240
  • 裝訂: Paperback
  • ISBN: 1107408539
  • ISBN-13: 9781107408531
  • 海外代購書籍(需單獨結帳)

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商品描述

Nonvolatile memories are becoming an increasingly important electronic component, due to the ever-increasing need for data storage in multimedia and other mobile applications where electronic components are replacing magnetic hard drives. Today, Flash is the main nonvolatile memory technology, but further scaling of this technology will likely be restricted by important physical and material limitations. This explains recent increased research on new concepts for nonvolatile memories, for which new developments in materials science and technology, the focus of this book, are key. Chapters include Advanced Flash Memory which deals with solutions for scaled Flash memory, including the use of new high-k layers and nanocrystals. Resistive switching concepts are discussed in the Oxide Resistive Switching Memory and Organic Resistive Switching Memory chapters. More research on polymer memories are detailed in Nanoparticle-Based Organic Memory and Organic Ferroelectric Memory. Two chapters deal with New Phase Change Memory and Deposition Methods and Future Explorative Memory Concepts, including piezoelectric, ferroelectric and ferromagnetic concepts.

商品描述(中文翻譯)

非揮發性記憶體正變得越來越重要,因為在多媒體和其他移動應用中對數據存儲的需求不斷增加,電子元件正在取代傳統的磁碟硬碟。如今,Flash 是主要的非揮發性記憶體技術,但這項技術的進一步縮放可能會受到重要的物理和材料限制的約束。這解釋了最近對非揮發性記憶體新概念的研究增加,而材料科學和技術的新發展,正是本書的重點。章節包括「先進的 Flash 記憶體」,該章節探討了針對縮放 Flash 記憶體的解決方案,包括使用新的高介電常數層和納米晶體。「氧化物電阻切換記憶體」和「有機電阻切換記憶體」章節中討論了電阻切換概念。關於聚合物記憶體的更多研究詳述在「基於納米粒子的有機記憶體」和「有機鐵電記憶體」中。兩個章節探討了「新相變記憶體」和「沉積方法及未來探索性記憶體概念」,包括壓電、鐵電和鐵磁概念。