Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices
暫譯: 摻雜鉿氧化物中的鐵電性：材料、特性與裝置

Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO₂ and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO₂-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO₂ processes, and the impact of dopants on ferroelectric properties are also extensively discussed in the book, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more.

Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HFO₂ and standard ferroelectric materials. Finally, HfO₂ based devices are summarized.

• Explores all aspects of the structural and electrical properties of HfO₂, including processes, modelling and implementation into semiconductor devices
• Considers potential applications including FeCaps, FeFETs, NCFETs, FTJs and more
• Provides comparison of an emerging ferroelectric material to conventional ferroelectric materials with insights to the problems of downscaling that conventional ferroelectrics face