Advanced Theory of Semiconductor Devices (Hardcover)
暫譯: 半導體裝置的進階理論 (精裝版)

Karl Hess

  • 出版商: IEEE
  • 出版日期: 1999-12-27
  • 售價: $1,176
  • 語言: 英文
  • 頁數: 352
  • 裝訂: Hardcover
  • ISBN: 0780334795
  • ISBN-13: 9780780334793
  • 相關分類: 半導體
  • 已絕版

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商品描述

無標題文件 Semiconductor devices are ubiquitous in today’s world and found increasingly in cars, kitchens, and electronic door looks, attesting to their presence in our daily lives. This comprehensive book brings you the fundamentals of semiconductor device theory from basic quantum physics to computer aided design. ADVANCED THEORY OF SEMICONDUCTOR DEVICES will help improve your understanding of computer simulation devices through a thorough discussion of basic equations, their validity, and numerical solutions as they are contained in current simulation tools. You will gain state-of-the-art knowledge of devices used in both III-V compounds and silicon technology. Specially featured are novel approaches and explanations of electronic transport, particularly in p-n junction diodes. Close attention is also given to innovative treatments of quantum level laser diodes and hot electron effects in silicon technology. This in-depth book is designed expressly for graduate students, research scientists, and research engineers in solid state electronics who want to gain a better grasp of the principles underlying semiconductor devices.

Contents :
Preface; Acknowledgments; Brief Review of the Relevant Equations of Physics; The Symmetry of the Crystal Lattice; The Theory of Energy Bands in Crystals; Imperfections of Ideal Crystal Structure; Equilibrium Statistics for Electrons and Holes; Self-Consistent Potentials and Dielectric Properties of Semiconductors; Scattering Theory; the Boltzmann Transport Equation and its Approximate Solutions; Generation-Recombination; The Heterojunction Barrier and Related transport Problems; The Device Equations of Shockley and Stratton; Numerical Device Simulations; Diodes; Laser-Diodes; Transistors; Appendix A: Tunneling and the Golden Rule; Appendix B: The One Band Approximation; Appendix C: Temperature Dependence of the Band Structure; Appendix D: Hall Effect and Magnetoresistance for Small Magnetic Fields; Appendix E: The Power Balance Equation from the Method of Moments; Appendix F: the Self-Consistent Potential at a Heterojunction (Quantum Case); Appendix G: Diffusive Transport and Thermionic Emission in Schottky Barrier Transport; Index; About the Author

商品描述(中文翻譯)

半導體裝置在當今世界中無處不在,並且越來越多地出現在汽車、廚房和電子門鎖中,證明了它們在我們日常生活中的存在。本書全面介紹了半導體裝置理論的基本原理,從基本的量子物理到計算機輔助設計。《半導體裝置的進階理論》將幫助您通過對基本方程式、其有效性及其在當前模擬工具中所包含的數值解的徹底討論,來提高您對計算機模擬裝置的理解。您將獲得有關III-V化合物和矽技術中使用的裝置的最先進知識。本書特別介紹了電子傳輸的新方法和解釋,特別是在p-n接面二極體中的應用。同時,對於量子級激光二極體和矽技術中的熱電子效應也給予了密切關注。本書深入淺出,專為研究生、研究科學家和固態電子學的研究工程師設計,旨在幫助他們更好地掌握半導體裝置的基本原理。

內容:

前言;致謝;相關物理方程的簡要回顧;晶格的對稱性;晶體中的能帶理論;理想晶體結構的缺陷;電子和空穴的平衡統計;半導體的自洽勢能和介電性質;散射理論;玻爾茲曼傳輸方程及其近似解;產生-復合;異質接面障礙及相關傳輸問題;肖克利和斯特拉頓的裝置方程;數值裝置模擬;二極體;激光二極體;晶體管;附錄A:隧道效應和黃金法則;附錄B:單能帶近似;附錄C:能帶結構的溫度依賴性;附錄D:小磁場下的霍爾效應和磁阻;附錄E:來自矩方法的功率平衡方程;附錄F:異質接面處的自洽勢能(量子情況);附錄G:肖特基障礙傳輸中的擴散傳輸和熱電子發射;索引;關於作者