Physics of Semiconductor Devices 2015th Edition (Hardcover)
暫譯: 半導體裝置物理學 2015年版 (精裝本)
Massimo Rudan
- 出版商: Springer
- 出版日期: 2015-01-14
- 售價: $3,830
- 貴賓價: 9.5 折 $3,639
- 語言: 英文
- 頁數: 649
- 裝訂: Hardcover
- ISBN: 1493911503
- ISBN-13: 9781493911509
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相關分類:
半導體、物理學 Physics
海外代購書籍(需單獨結帳)
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商品描述
This book describes the basic physics of semiconductors, including the hierarchy of transport models, and connects the theory with the functioning of actual semiconductor devices. Details are worked out carefully and derived from the basic physics, while keeping the internal coherence of the concepts and explaining various levels of approximation. Examples are based on silicon due to its industrial importance. Several chapters are included that provide the reader with the quantum-mechanical concepts necessary for understanding the transport properties of crystals. The behavior of crystals incorporating a position-dependent impurity distribution is described, and the different hierarchical transport models for semiconductor devices are derived (from the Boltzmann transport equation to the hydrodynamic and drift-diffusion models). The transport models are then applied to a detailed description of the main semiconductor-device architectures (bipolar, MOS). The final chapters are devoted to the description of some basic fabrication steps, and to measuring methods for the semiconductor-device parameters.
商品描述(中文翻譯)
本書描述了半導體的基本物理學,包括傳輸模型的層次結構,並將理論與實際半導體設備的運作相連結。細節經過仔細推導,並源自基本物理學,同時保持概念的內部一致性,並解釋各種近似的層次。由於矽在工業上的重要性,範例基於矽材料。書中包含幾個章節,為讀者提供理解晶體傳輸特性的量子力學概念。描述了包含位置依賴雜質分佈的晶體行為,並推導出半導體設備的不同層次傳輸模型(從玻爾茲曼傳輸方程到流體動力學和漂移擴散模型)。然後將這些傳輸模型應用於主要半導體設備架構(雙極型、MOS)的詳細描述。最後幾個章節專注於一些基本製造步驟的描述,以及半導體設備參數的測量方法。