Extreme Ultraviolet Lithography (Hardcover)
暫譯: 極紫外光微影技術 (精裝版)
Banqiu Wu, Ajay Kumar
- 出版商: McGraw-Hill Education
- 出版日期: 2009-05-01
- 售價: $5,000
- 貴賓價: 9.5 折 $4,750
- 語言: 英文
- 頁數: 482
- 裝訂: Hardcover
- ISBN: 0071549188
- ISBN-13: 9780071549189
海外代購書籍(需單獨結帳)
商品描述
Master Extreme Ultraviolet Lithography Techniques
Produce high-density, ultrafast microchips using the latest EUVL methods. Written by industry experts, Extreme Ultraviolet Lithography details the equipment, materials, and procedures required to radically extend fabrication capabilities to wavelengths of 32 nanometers and below. Work with masks and resists, configure high-reflectivity mirrors, overcome power and thermal challenges, enhance resolution, and minimize wasted energy. You will also learn how to use Mo/Si deposition technology, fine-tune performance, and optimize cost of ownership.
- Design EUVL-ready photomasks, resist layers, and source-collector modules
- Assemble optical components, mirrors, microsteppers, and scanners
- Harness laser-produced and discharge pulse plasma sources
- Enhance resolution using proximity correction and phase-shift
- Generate modified illumination using holographic elements
- Measure critical dimensions using metrology and scatterometry
- Deploy stable Mo/Si coatings and high-sensitivity multilayers
- Handle mask defects, layer imperfections, and thermal instabilities
商品描述(中文翻譯)
**掌握極紫外光微影技術**
使用最新的極紫外光微影(EUVL)方法生產高密度、超快速的微晶片。本書《極紫外光微影》由業界專家撰寫,詳細介紹了將製造能力大幅擴展至32納米及以下波長所需的設備、材料和程序。學習如何使用掩模和光阻,配置高反射率鏡子,克服功率和熱挑戰,增強解析度,並最小化能源浪費。您還將學習如何使用Mo/Si沉積技術,微調性能,並優化擁有成本。
- 設計適合EUVL的光刻掩模、光阻層和源-收集模組
- 組裝光學元件、鏡子、微步進器和掃描器
- 利用激光產生和放電脈衝等離子體源
- 使用接近修正和相位移增強解析度
- 使用全息元件生成修改過的照明
- 使用計量學和散射測量關鍵尺寸
- 部署穩定的Mo/Si塗層和高靈敏度多層
- 處理掩模缺陷、層不完美和熱不穩定性