The Physics of Semiconductor Devices: Proceedings of Iwpsd 2021

Singh, Rajendra, Singh, Madhusudan, Kapoor, Ashok

The Physics of Semiconductor Devices: Proceedings of Iwpsd 2021
  • 出版商: Springer
  • 出版日期: 2024-05-31
  • 售價: $6,480
  • 貴賓價: 9.5 折 $6,156
  • 語言: 英文
  • 頁數: 410
  • 裝訂: Hardcover - also called cloth, retail trade, or trade
  • ISBN: 9819715709
  • ISBN-13: 9789819715701
  • 相關分類: 半導體、物理學 Physics

    • 海外代購書籍(需單獨結帳)

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商品描述

This book includes proceedings of the 21st International Workshop on Physics of Semiconductor Devices. The workshop is jointly organized by the Indian Institute of Technology, Delhi, and Solid State Physics Laboratory, Delhi, in collaboration with the Society for Semiconductor Devices and Semiconductor Society of India. This book disseminates the current knowledge of semiconductor physics and its applications across the scientific community. It is based on a biennial workshop that provides the participating research groups with a stimulating platform for interaction and collaboration with colleagues from the same scientific community. The book discusses the latest developments in III-nitrides; materials and devices, compound semiconductors, VLSI technology, optoelectronics, sensors, photovoltaics, crystal growth, epitaxy, and characterization, graphene, and other 2D materials and organic semiconductors. The research articles included in this book are contributed by various eminent scientists from all over the world. The book serves as a reference resource for researchers and practitioners in academia and industry.

商品描述(中文翻譯)

本書包含第21屆國際半導體器件物理研討會的會議紀錄。該研討會由德里印度理工學院與德里固態物理實驗室共同主辦，並與半導體器件學會及印度半導體學會合作舉辦。本書旨在向科學社群傳播半導體物理及其應用的最新知識。它基於每兩年舉辦一次的研討會，為參與的研究團隊提供了一個促進互動與合作的激勵平台，讓來自同一科學社群的同事們能夠交流。本書討論了III-氮化物的最新發展；材料與器件、化合物半導體、VLSI技術、光電學、感測器、光伏技術、晶體生長、外延生長及表徵、石墨烯及其他二維材料和有機半導體。本書中所包含的研究文章由來自世界各地的多位傑出科學家貢獻。該書作為學術界和產業界研究人員及實務工作者的參考資源。

作者簡介

Rajendra Singh is Professor at the Department of Physics, IIT Delhi, New Delhi since 2006. He received a Ph.D. degree from the Inter-University Accelerator Centre (affiliated to J.N.U., New Delhi) in 2001. He worked as Post-doctoral Fellow first at the Walter Schottky Institute, Technical University of Munich, Germany, and then at the Max Planck Institute of Microstructure Physics, Halle, Germany (2001-2006). His areas of interest are GaN-based materials and devices, wafer bonding, layer transfer of crystalline semiconductors and 2D materials, 2D materials and devices, 2D/3D heterojunctions. He has about 150 publications in International Journals and a similar number of publications in conference proceedings.

Madhusudan Singh received his Ph.D. degree in Electrical Engineering from the University of Michigan, Ann Arbor, in 2005. After the post-doctoral experience at MIT, and research scientist experience at Arizona State, and serving as an Associate Editor for John Wiley, he joined the faculty of Department of Electrical Engineering, IIT Delhi in 2013 as Associate Professor. His research interests include solution-processed devices, flexible and printed electronics, materials chemistry, sensors and detectors, and general device physics.

Ashok Kumar Kapoor received his Ph. D degree from the Department of Physics, Delhi University. He Joined Solid State Physics Laboratory, Delhi, in 1985 and superannuated as scientist 'G' and Group Head of Material Characterization group. His areas of research interest are the growth and characterization of semiconductor materials and conduction mechanisms in conducting polymers for solar cells and display applications for MBE growth of 2D metal chalcogenides. He has co-authored 35 publications in International and National journals and about 30 papers presented in various conferences and seminars. He has given several invited talks in various seminars and educational institutions.


作者簡介(中文翻譯)

Rajendra Singh 自 2006 年以來擔任德里印度理工學院物理系教授。他於 2001 年在新德里 J.N.U. 附屬的跨大學加速器中心獲得博士學位。他首先在德國慕尼黑工業大學的 Walter Schottky Institute 擔任博士後研究員，然後在德國哈雷的馬克斯·普朗克微結構物理研究所工作（2001-2006）。他的研究興趣包括基於 GaN 的材料和器件、晶圓鍵合、晶體半導體和 2D 材料的層轉移、2D 材料和器件、2D/3D 異質結。他在國際期刊上發表了約 150 篇論文，並在會議論文集中發表了相似數量的論文。

Madhusudan Singh 於 2005 年在密西根大學安娜堡校區獲得電機工程博士學位。在麻省理工學院完成博士後研究經驗後，他在亞利桑那州立大學擔任研究科學家，並擔任 John Wiley 的副編輯，於 2013 年加入德里印度理工學院電機工程系，擔任副教授。他的研究興趣包括溶液處理器件、柔性和印刷電子學、材料化學、傳感器和探測器，以及一般器件物理。

Ashok Kumar Kapoor 於德里大學物理系獲得博士學位。他於 1985 年加入德里固態物理實驗室，並以科學家 'G' 的身份退休，擔任材料表徵小組的組長。他的研究興趣包括半導體材料的生長和表徵，以及導電聚合物在太陽能電池和顯示應用中的導電機制，並專注於 2D 金屬硫化物的 MBE 生長。他共同撰寫了 35 篇國際和國內期刊的論文，以及約 30 篇在各種會議和研討會上發表的論文。他在各種研討會和教育機構中發表了多次受邀演講。

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