Gallium Nitride and Silicon Carbide Power Devices (Hardcover)
暫譯: 氮化鎵與碳化矽功率元件 (精裝版)
B Jayant Baliga
- 出版商: World Scientific Pub
- 出版日期: 2017-03-15
- 售價: $1,980
- 貴賓價: 9.8 折 $1,940
- 語言: 英文
- 頁數: 592
- 裝訂: Hardcover
- ISBN: 9813109408
- ISBN-13: 9789813109407
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相關分類:
半導體、材料科學 Meterials、電力電子 Power-electronics
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商品描述
During the last 30 years, significant progress has been made to improve our understanding of gallium nitride and silicon carbide device structures, resulting in experimental demonstration of their enhanced performances for power electronic systems. Gallium nitride power devices made by the growth of the material on silicon substrates have gained a lot of interest. Power device products made from these materials have become available during the last five years from many companies.
This comprehensive book discusses the physics of operation and design of gallium nitride and silicon carbide power devices. It can be used as a reference by practicing engineers in the power electronics industry and as a textbook for a power device or power electronics course in universities.
Readership: Researchers, academics, and graduate students in electrical & electronic engineering, semiconductors, materials engineering and energy research.
商品描述(中文翻譯)
在過去的30年中,我們對氮化鎵(gallium nitride)和碳化矽(silicon carbide)器件結構的理解取得了重大進展,並實驗性地展示了它們在電力電子系統中的增強性能。基於在矽基板上生長的氮化鎵功率器件引起了廣泛的關注。在過去五年中,許多公司已經推出了這些材料製成的功率器件產品。
這本綜合性的書籍討論了氮化鎵和碳化矽功率器件的運作物理和設計。它可以作為電力電子行業中實務工程師的參考書,也可以作為大學電力器件或電力電子課程的教科書。
讀者對象:電機與電子工程、半導體、材料工程及能源研究的研究人員、學者和研究生。