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商品描述
Description
This is the first book to be published on physical principles, mathematical models, and practical simulation of GaN-based devices. Gallium nitride and its related compounds enable the fabrication of highly efficient light-emitting diodes and lasers for a broad spectrum of wavelengths, ranging from red through yellow and green to blue and ultraviolet. Since the breakthrough demonstration of blue laser diodes by Shuji Nakamura in 1995, this field has experienced tremendous growth worldwide. Various applications can be seen in our everyday life, from green traffic lights to full-color outdoor displays to high-definition DVD players. In recent years, nitride device modeling and simulation has gained importance and advanced software tools are emerging. Similar developments occurred in the past with other semiconductors such as silicon, where computer simulation is now an integral part of device development and fabrication.
This book presents a review of modern device concepts and models, written by leading researchers in the field. It is intended for scientists and device engineers who are interested in employing computer simulation for nitride device design and analysis.
Table of Contents
Preface.List of Contributors.
Part 1 Material Properties.
1 Introduction (Joachim Piprek).
1.1 A Brief History.
1.2 Unique Material Properties.
1.3 Thermal Parameters.
References.
2 Electron Bandstructure Parameters (Igor Vurgaftman and Jerry R. Meyer).
2.1 Introduction.
2.2 Band Structure Models.
2.3 Band Parameters.
2.4 Conclusions.
References.
3 Spontaneous and Piezoelectric Polarization: Basic Theory vs. Practical Recipes (Fabio Bernardini).
3.1 Why Spontaneous Polarization in III-V Nitrides?
3.2 Theoretical Prediction of Polarization Properties in AlN, GaN and InN.
3.3 Piezoelectric and Pyroelectric Effects in III-V Nitrides Nanostructures.
3.4 Polarization Properties in Ternary and Quaternary Alloys.
3.5 Orientational Dependence of Polarization.
References.
4 Transport Parameters for Electrons and Holes (Enrico Bellotti and Francesco Bertazzi).
4.1 Introduction.
4.2 Numerical Simulation Model.
4.3 Analytical Models for the Transport Parameters.
4.4 GaN Transport Parameters.
4.5 AlN Transport Parameters.
4.6 InN Transport Parameters.
4.7 Conclusions.
References.
5 Optical Constants of Bulk Nitrides (Rüdiger Goldhahn, Carsten Buchheim, Pascal Schley, Andreas Theo Winzer, and Hans Wenzel).
5.1 Introduction.
5.2 Dielectric Function and Band Structure.
5.3 Experimental Results.
5.4 Modeling of the Dielectric Function.
References.
6 Intersubband Absorption in AlGaN/GaN Quantum Wells (Sulakshana Gunna, Francesco Bertazzi, Roberto Paiella, and Enrico Bellotti).
6.1 Introduction.
6.2 Theoretical Model.
6.3 Numerical Implementation.
6.4 Absorption Energy in AlGaN-GaN MQWs.
6.5 Conclusions.
References.
7 Interband Transitions in InGaN Quantum Wells (Jörg Hader, Jerome V. Moloney, Angela Thränhardt, and Stephan W. Koch).
7.1 Introduction.
7.2 Theory.
7.3 Theory–Experiment Gain Comparison.
7.4 Absorption/Gain.
7.5 Spontaneous Emission.
7.6 Auger Recombinations.
7.7 Internal Field Effects.
7.8 Summary.
References.
8 Electronic and Optical Properties of GaN-based Quantum Wells with (1010) Crystal Orientation (Seoung-Hwan Park and Shun-Lien Chuang).
8.1 Introduction.
8.2 Theory.
8.2.1 Non-Markovian gain model with many-body effects.
8.3 Results and Discussion.
8.4 Summary.
References.
9 Carrier Scattering in Quantum-Dot Systems (Frank Jahnke).
9.1 Introduction.
9.2 Scattering Due to Carrier–Carrier Coulomb Interaction.
9.3 Scattering Due to Carrier–Phonon Interaction.
9.4 Summary and Outlook.
References.
Part 2 Devices.
10 AlGaN/GaN High Electron Mobility Transistors (Tomás Palacios and Umesh K. Mishra).
10.1 Introduction.
10.2 Physics-based Simulations.
10.3 Conclusions.
References.
11 Intersubband Optical Switches for Optical Communications (Nobuo Suzuki).
11.1 Introduction.
11.2 Physics of ISBT in Nitride MQWs.
11.3 Calculation of Absorption Spectra.
11.4 FDTD Simulator for GaN/AlGaN ISBT Switches.
References.
12 Intersubband Electroabsorption Modulator (Petter Holmström).
12.1 Introduction.
12.2 Modulator Structure.
12.3 Model.
12.4 Results.
12.5 Summary.
References.
13 Ultraviolet Light-Emitting Diodes (Yen-Kuang Kuo, Sheng-Horng Yen, and Jun-Rong Chen).
13.1 Introduction.
13.2 Device Structure.
13.3 Physical Models and Parameters.
13.4 Comparison Between Simulated and Experimental Results.
13.5 Performance Optimization.
13.6 Conclusion.
References.
14 Visible Light-Emitting Diodes (Sergey Yu. Karpov).
14.1 Introduction.
14.2 Simulation Approach and Materials Properties.
14.3 Device Analysis.
14.4 Novel LED Structures.
14.5 Conclusion.
References.
15 Simulation of LEDs with Phosphorescent Media for the Generation of White Light (Norbert Linder, Dominik Eisert, Frank Jermann, and Dirk Berben).
15.1 Introduction.
15.2 Requirements for a Conversion LED Model.
15.3 Color Metrics for Conversion LEDs.
15.4 Phosphor Model.
15.5 Simulation Examples.
15.6 Conclusions.
References.
16 Fundamental Characteristics of Edge-Emitting Lasers (Gen-ichi Hatakoshi).
16.1 Introduction.
16.2 Basic Equations for the Device Simulation.
16.3 Simulation for Electrical Characteristics and Carrier Overflow Analysis.
16.4 Perpendicular TransverseMode and Beam Quality Analysis.
16.5 Thermal Analysis.
16.6 Conclusions.
References.
17 Resonant Internal Transverse-Mode Coupling in InGaN/GaN/AlGaN Lasers (Gennady A. Smolyakov and Marek Osiński).
17.1 Introduction.
17.2 Internal Mode Coupling and the Concept of “Ghost Modes.”
17.3 Device Structure and Material Parameters.
17.4 Calculation Technique.
17.5 Results of Calculations.
17.6 Discussion and Conclusions.
References.
18 Optical Properties of Edge-Emitting Lasers: Measurement and Simulation (Ulrich T. Schwarz and Bernd Witzigmann).
18.1 Introduction.
18.2 Waveguide Mode Stability.
18.3 Optical Waveguide Loss.
18.4 Mode Gain Analysis.
18.5 Conclusion.
References.
19 Electronic Properties of InGaN/GaN Vertical-Cavity Lasers (Joachim Piprek, Zhan-Ming Li, Robert Farrell, Steven P. DenBaars, and Shuji Nakamura).
19.1 Introduction to Vertical-Cavity Lasers.
19.2 GaN-based VCSEL Structure.
19.3 Theoretical Models and Material Parameters.
19.4 Simulation Results and Device Analysis.
19.5 Summary.
References.
20 Optical Design of Vertical-Cavity Lasers (Wlodzimierz Nakwaski, Tomasz Czyszanowski, and Robert P. Sarzala).
20.1 Introduction.
20.2 The GaN VCSEL Structure.
20.3 The Scalar Optical Approach.
20.4 The Vectorial Optical Approach.
20.5 The Self-consistent Calculation Algorithm.
20.6 Simulation Results.
20.7 Discussion and Conclusions.
References.
21 GaN Nanowire Lasers (Alexey V. Maslov and Cun-Zheng Ning).
21.1 Introduction.
21.2 Nanowire Growth and Characterization.
21.3 Nanowire Laser Principles.
21.4 Anisotropy of Material Gain.
21.5 Guided Modes.
21.6 Modal Gain and Threshold.
21.7 Conclusion.
References.
Index.
商品描述(中文翻譯)
**書籍描述**
這是第一本關於氮化鎵（GaN）基元件的物理原理、數學模型和實用模擬的出版書籍。氮化鎵及其相關化合物使得能夠製造出高效能的發光二極體和激光器，涵蓋從紅色、黃色、綠色到藍色和紫外線的廣泛波長。自1995年中村修司（Shuji Nakamura）成功展示藍色激光二極體以來，這一領域在全球經歷了巨大的增長。我們日常生活中可以看到各種應用，從綠色交通信號燈到全彩戶外顯示器，再到高畫質DVD播放器。近年來，氮化物元件的建模和模擬變得越來越重要，並且出現了先進的軟體工具。過去，其他半導體如矽（Silicon）也發生了類似的發展，計算機模擬現在已成為元件開發和製造的不可或缺的一部分。
本書由該領域的領先研究人員撰寫，回顧了現代元件概念和模型。它旨在為對氮化物元件設計和分析中使用計算機模擬感興趣的科學家和元件工程師提供參考。
**目錄**
前言
貢獻者名單
第一部分 材料特性
1 介紹（Joachim Piprek）
1.1 簡史
1.2 獨特的材料特性
1.3 熱參數
參考文獻
2 電子能帶結構參數（Igor Vurgaftman 和 Jerry R. Meyer）
2.1 介紹
2.2 能帶結構模型
2.3 能帶參數
2.4 結論
參考文獻
3 自發極化和壓電極化：基本理論與實用配方（Fabio Bernardini）
3.1 為什麼在III-V氮化物中存在自發極化？
3.2 AlN、GaN和InN中的極化特性理論預測
3.3 III-V氮化物納米結構中的壓電和熱電效應
3.4 三元和四元合金中的極化特性
3.5 極化的方向依賴性
參考文獻
4 電子和孔的傳輸參數（Enrico Bellotti 和 Francesco Bertazzi）
4.1 介紹
4.2 數值模擬模型
4.3 傳輸參數的解析模型
4.4 GaN傳輸參數
4.5 AlN傳輸參數
4.6 InN傳輸參數
4.7 結論
參考文獻
5 大塊氮化物的光學常數（Rüdiger Goldhahn、Carsten Buchheim、Pascal Schley、Andreas Theo Winzer 和 Hans Wenzel）
5.1 介紹
5.2 電介質函數和能帶結構
5.3 實驗結果
5.4 電介質函數的建模
參考文獻
6 AlGaN/GaN量子井中的子帶吸收（Sulakshana Gunna、Francesco Bertazzi、Roberto Paiella 和 Enrico Bellotti）
6.1 介紹
6.2 理論模型
6.3 數值實現
6.4 AlGaN-GaN MQWs中的吸收能量
6.5 結論
參考文獻
7 InGaN量子井中的帶間轉換（Jörg Hader、Jerome V. Moloney、Angela Thrähardt 和 Stephan W. Koch）
7.1 介紹
7.2 理論
7.3 理論與實驗增益比較
7.4 吸收/增益
7.5 自發發射
7.6 Auger重組
7.7 內部場效應
7.8 總結
參考文獻
8 具有(1010)晶體取向的GaN基量子井的電子和光學特性（Seoung-Hwan Park 和 Shun-Lien Chuang）
8.1 介紹
8.2 理論
8.2.1 考慮多體效應的非馬可夫增益模型
8.3 結果與討論
8.4 總結
參考文獻
9 量子點系統中的載流子散射（Frank Jahnke）
9.1 介紹
9.2 載流子-載流子庫倫相互作用引起的散射
9.3 載流子-聲子相互作用引起的散射
9.4 總結與展望
參考文獻
第二部分 元件
10 AlGaN/GaN高電子遷移率晶體管（Tomás Palacios 和 Umesh K. Mishra）
10.1 介紹
10.2 基於物理的模擬
10.3 結論
參考文獻
11 用於光通信的子帶光開關（Nobuo Suzuki）
11.1 介紹
11.2 氮化物MQWs中的ISBT物理
11.3 吸收光譜的計算
11.4 GaN/AlGaN ISBT開關的FDTD模擬器
參考文獻
12 子帶電吸收調製器（Petter Holmström）
12.1 介紹
12.2 調製器結構
12.3 模型
12.4 結果
12.5 總結
參考文獻
13 紫外光發射二極體（Yen-Kuang Kuo、Sheng-Horng Yen 和 Jun-Rong Chen）
13.1 介紹
13.2 元件結構
13.3 物理模型和參數
13.4 模擬結果與實驗結果的比較
13.5 性能優化
13.6 結論
參考文獻
14 可見光發射二極體（Sergey Yu. Karpov）
14.1 介紹
14.2 模擬方法和材料特性
14.3 元件分析
14.4 新型LED結構
14.5 結論
參考文獻
15 使用磷光介質生成白光的LED模擬（Norbert Linder、Dominik Eisert、Frank Jermann 和 Dirk Berben）
15.1 介紹
15.2 轉換LED模型的要求
15.3 轉換LED的顏色度量
15.4 磷光模型
15.5 模擬範例
15.6 結論
參考文獻
16 邊發射激光器的基本特性（Gen-ichi Hatakoshi）
16.1 介紹
16.2 元件模擬的基本方程
16.3 電特性和載流子溢出分析的模擬
16.4 垂直橫向模式和光束質量分析
16.5 熱分析
16.6 結論
參考文獻
17 InGaN/GaN/AlGaN激光器中的共振內部橫向模式耦合（Gennady A. Smolyakov 和 Marek Osiński）
17.1 介紹
17.2 內部模式耦合和“幽靈模式”的概念
17.3 元件結構和材料參數
17.4 計算技術
17.5 計算結果
17.6 討論與結論
參考文獻
18 邊發射激光器的光學特性：測量與模擬（Ulrich T. Schwarz 和 Bernd Witzigmann）
18.1 介紹
18.2 波導模式穩定性
18.3 光學波導損耗
18.4 模式增益分析
18.5 結論
參考文獻
19 InGaN/GaN垂直腔激光器的電子特性（Joachim Piprek、Zhan-Ming Li、Robert Farrell、Steven P. DenBaars 和 Shuji Nakamura）
19.1 垂直腔激光器的介紹
19.2 GaN基VCSEL結構
19.3 理論模型和材料參數
19.4 模擬結果和元件分析
19.5 總結
參考文獻
20 垂直腔激光器的光學設計（Wlodzimierz Nakwaski、Tomasz Czyszanowski 和 Robert P. Sarzala）
20.1 介紹
20.2 GaN VCSEL結構
20.3 標量光學方法
20.4 向量光學方法
20.5 自洽計算算法
20.6 模擬結果
20.7 討論與結論
參考文獻
21 GaN納米線激光器（Alexey V. Maslov 和 Cun-Zheng Ning）
21.1 介紹
21.2 納米線的生長與表徵
21.3 納米線激光原理
21.4 材料增益的各向異性
21.5 引導模式
21.6 模式增益和閾值
21.7 結論
參考文獻
索引
