Nitride Semiconductor Technology: Power Electronics and Optoelectronic Devices (Hardcover)
暫譯: 氮化物半導體技術：功率電子學與光電裝置（精裝版）

Roccaforte

Nitride Semiconductor Technology: Power Electronics and Optoelectronic Devices (Hardcover)

相關主題

商品描述

Groundbreaking book that combines information on power electronics and optoelectronic applications of nitride semiconductors

With contributions from a panel of international experts, Nitride Semiconductor Technology: Power Electronics and Optoelectronic Devices offers a state-of-the-art review of GaN-based technologies that covers the fields of both power electronics and optoelectronic devices. The authors present detailed explanations of the physical properties of materials and their growth methods. They also include information on GaN-based technology applications in high electron mobility transistors, vertical power devices, LEDs, laser diodes, and vertical-cavity surface-emitting lasers.

Nitride Semiconductor Technology contains an in-depth examination of reliability issues with the materials and offers advice on integrating them with 2D materials for novel high-frequency and high-power devices. The book also contains a review of the most recent advances in the field. This important book:

  • Presents an in-depth overview of properties, growth techniques, and applicability of nitride semiconductors
  • Offers a one-stop resource that covers nitride semiconductor technology from materials to devices
  • Reviews a widerange of nitride semiconductor applications in high-power and high-frequency devices

Written for materials scientists, semiconductor physicists, semiconductor industry professionals, electrical engineers, and electrotechnical industry professionals, Nitride Semiconductor Technology: Power Electronics and Optoelectronic Devices combines the most recent information on power electronics and optoelectronic applications of nitride semiconductors.

商品描述(中文翻譯)

開創性的書籍，結合了氮化物半導體的功率電子學和光電應用資訊

本書《氮化物半導體技術：功率電子學與光電裝置》由一群國際專家共同撰寫，提供了基於氮化鎵（GaN）技術的最新綜述，涵蓋了功率電子學和光電裝置兩個領域。作者詳細解釋了材料的物理特性及其生長方法，並提供了氮化鎵技術在高電子遷移率晶體管、垂直功率裝置、LED、雷射二極體和垂直腔面發射雷射中的應用資訊。

《氮化物半導體技術》深入探討了材料的可靠性問題，並提供了將其與二維材料整合以開發新型高頻和高功率裝置的建議。本書還回顧了該領域的最新進展。這本重要的書籍：


  • 提供了氮化物半導體的特性、生長技術和應用性的深入概述

  • 提供了一個涵蓋從材料到裝置的氮化物半導體技術的一站式資源

  • 回顧了氮化物半導體在高功率和高頻裝置中的廣泛應用

本書《氮化物半導體技術：功率電子學與光電裝置》是為材料科學家、半導體物理學家、半導體產業專業人士、電氣工程師及電氣技術產業專業人士所撰寫，結合了氮化物半導體在功率電子學和光電應用方面的最新資訊。

作者簡介

Fabrizio Roccaforte, PhD, is a Senior Researcher of the Italian National Research Council at the Institute for Microelectronics and Microsystems (CNR-IMM) in Catania, Italy. His research interests are in the field of wide band gap semiconductor materials and processing for power electronics devices.

Mike Leszczynski, PhD, is a Professor of the Polish Academy of Sciences at the Institute of High Pressure Physics (Unipress) and a Vicepresident of TopGaN Lasers, Warsaw, Poland. His research interests are nitride semiconductors, optoelectronics, crystal growth, crystal defects, and X-ray diffraction.

作者簡介(中文翻譯)

**Fabrizio Roccaforte, PhD** 是義大利國家研究委員會（CNR）微電子與微系統研究所（CNR-IMM）的一位高級研究員，位於義大利卡塔尼亞。他的研究興趣集中在寬帶隙半導體材料及其在電力電子設備中的加工應用。

**Mike Leszczynski, PhD** 是波蘭科學院高壓物理研究所（Unipress）的教授，並且是波蘭華沙TopGaN Lasers公司的副總裁。他的研究興趣包括氮化物半導體、光電電子學、晶體生長、晶體缺陷以及X射線衍射。

類似商品