Fundamentals of Power Semiconductor Devices, 2/e (Hardcover)
Baliga, B. Jayant
- 出版商: Springer
- 出版日期: 2018-10-12
- 售價: $4,950
- 貴賓價: 9.5 折 $4,703
- 語言: 英文
- 頁數: 1086
- 裝訂: 精装
- ISBN: 3319939874
- ISBN-13: 9783319939872
-
相關分類:
半導體
-
其他版本:
Fundamentals of Power Semiconductor Devices, 2/e (Paperback)
海外代購書籍(需單獨結帳)
買這商品的人也買了...
-
$4,770$4,532 -
$2,450$2,328 -
$4,700$4,465 -
$3,600$3,420 -
$8,270$7,857 -
$8,270$7,857 -
$380$361 -
$480$432 -
$550$495 -
$2,100$2,058 -
$2,280$2,166 -
$4,130$3,924 -
$2,500$2,450 -
$1,980$1,940 -
$3,680$3,496 -
$3,350$3,183 -
$653現代 VLSI 器件基礎, 2/e (Fundamentals of Modern VLSI Devices, 2/e)
-
$2,700$2,646 -
$480$379 -
$1,950$1,853 -
$1,744Physics of Semiconductor Devices, 4/e (Hardcover)
-
$1,870$1,777 -
$1,710$1,625 -
$474$450 -
$950$855
相關主題
商品描述
Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment here focuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide devices. The book will appeal to practicing engineers in the power semiconductor device community.
商品描述(中文翻譯)
《功率半導體器件基礎》深入探討了電力電子行業常用的功率半導體器件的操作物理學。書中展示了解釋所有功率半導體器件操作的分析模型。本書主要關注矽器件,但也包括新興碳化矽器件的獨特特性和設計要求。該書將對功率半導體器件社區的實踐工程師具有吸引力。