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商品描述
This concise volume examines the characteristic electronic parameters of semiconductor interfaces, namely the barrier heights of metal-semiconductor or Schottky contacts and the valence-band discontinuities of semiconductor-semiconductor interfaces or heterostructures. Both are determined by the same concept, namely the wave-function tails of electron states overlapping a semiconductor band gap directly at the interface. These interface-induced gap states (IFIGS) result from the complex band structure of the corresponding semiconductor. The IFIGS are characterized by two parameters, namely by their branch point, at which their charge character changes from predominantly valence-band- to conduction-band-like, and secondly by the proportionality factor or slope parameter of the corresponding electric-dipole term, which varies in proportion to the difference in the electronegativities of the two solids forming the interface. This IFIGS-and-electronegativity concept consistently and quantitatively explains the experimentally observed barrier heights of Schottky contacts as well as the valence-band offsets of heterostructures. Insulators are treated as wide band-gap semiconductors.
商品描述(中文翻譯)
這本簡明的著作探討了半導體介面的特徵電子參數，即金屬-半導體或Schottky接觸的勢壘高度，以及半導體-半導體介面或異質結構的價帶不連續性。這兩者都是由同一概念決定的，即電子態的波函數尾部在介面處與半導體帶隙的重疊。這些介面誘導的帶隙態（IFIGS）源自於相應半導體的複雜能帶結構。IFIGS由兩個參數特徵化，首先是其分支點，在此點其電荷特性從主要的價帶特性轉變為導帶特性；其次是相應電偶極項的比例因子或斜率參數，該參數隨著形成介面的兩種固體的電負性差異而變化。這一IFIGS與電負性概念一致且定量地解釋了實驗觀察到的Schottky接觸的勢壘高度以及異質結構的價帶偏移。絕緣體被視為寬帶隙半導體。
作者簡介
Winfried Mönch received a Dr.rer.nat. degree from the Georg-August-University of Göttingen in 1961. He spent three years in the Semiconductor Department of the AEG Research Institute Frankfurt-Main before moving to the RWTH Aachen University. There he was awarded the venia legendi for physics in 1968 and became an Associate Professor two years later. In 1974 he was appointed Professor at the University of Duisburg (since 2003 University of Duisburg-Essen) and retired in 1999. He was the first Walter Schottky Visiting Professor at Stanford University in 1981 and received the E.W. Müller Award 1984 from the University of Wisconsin-Milwaukee. He has authored two monographs on semiconductor surfaces and interfaces, which have been published in the Springer Series in Surface Sciences.
作者簡介(中文翻譯)
Winfried Mönch於1961年獲得哥廷根大學的自然科學博士學位。他在法蘭克福-美因的AEG研究所半導體部門工作了三年，之後轉至亞琛工業大學。在那裡，他於1968年獲得物理學的教學資格，並在兩年後成為副教授。1974年，他被任命為杜伊斯堡大學（自2003年起為杜伊斯堡-埃森大學）的教授，並於1999年退休。他於1981年成為史丹佛大學首位Walter Schottky訪問教授，並於1984年獲得威斯康辛大學密爾瓦基分校的E.W. Müller獎。他撰寫了兩本關於半導體表面和界面的專著，已在Springer的表面科學系列中出版。
