Differentiated Layout Styles for Mosfets: Electrical Behavior in Harsh Environments

Gimenez, Salvador Pinillos, Galembeck, Egon Henrique Salerno

Differentiated Layout Styles for Mosfets: Electrical Behavior in Harsh Environments
  • 出版商: Springer
  • 出版日期: 2024-05-07
  • 售價: $3,020
  • 貴賓價: 9.5 折 $2,869
  • 語言: 英文
  • 頁數: 216
  • 裝訂: Quality Paper - also called trade paper
  • ISBN: 3031290887
  • ISBN-13: 9783031290886

    • 海外代購書籍(需單獨結帳)

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商品描述

This book describes in detail the semiconductor physics and the effects of the high temperatures and ionizing radiations in the electrical behavior of the Metal-OxideSemiconductor Field Effect Transistors (MOSFETs), implemented with the first and second generations of the differentiated layout styles. The authors demonstrate a variety of innovative layout styles for MOSFETs, enabling readers to design analog and RF MOSFETs that operate in a high-temperature wide range and an ionizing radiation environment with high electrical performance and reduced die area.

商品描述(中文翻譯)

本書詳細描述了半導體物理學以及高溫和電離輻射對金屬氧化物半導體場效電晶體（MOSFET）的電性行為的影響，並介紹了第一代和第二代不同佈局風格的實現方式。作者展示了各種創新的MOSFET佈局風格，使讀者能夠設計在高溫廣範圍和電離輻射環境下具有高電性能和減少晶片面積的類比和射頻MOSFET。

作者簡介

Salvador Pinillos Gimenez is a Full Professor at the Department of Electrical Engineering, Centro Universitário FEI (FEI-SP) and MTG2i Solutions Co., São Paulo, Brazil. In 1984, he received his B.Sc. degree in Electronic Engineering from UMC, São Paulo, Brazil. He obtained the M.Sc. degree in Electrical Engineering from Microelectronic Lab. of São Paulo University (LME/EPUSP) in 1990. In October 2004, he obtained the Ph.D. degree in Microelectronics. His general interests are in new MOSFETs, FinFETs, power devices, design and optimization of analog and radiofrequency CMOS ICs by using computational tools based on Artificial Inteligence (iMTGSPICE) and parallel digital processing.

Egon Henrique Salerno Galembeck is a researcher at MTG2i Solutions Co. in the research lines of design and optimization of analog and radio frequency CMOS ICs, electrical characterization of transistors in harsh environment and three-dimensional numerical simulation of MOS devices. In2013, he received the electrical engineering degree from Centro Universitário FEI, São Paulo, Brazil. He obtained the M. Sc. degree in Electrical Engineering in the area of ​​Integrated Electronic Devices from Centro Universitário FEI, in September 2015. He received his Ph.D. degree in Electrical Engineering in the area of Nanoelectronics and Integrated Devices from Centro Universitário FEI, São Paulo, Brazil, in 2022.

作者簡介(中文翻譯)

Salvador Pinillos Gimenez是巴西聖保羅州Centro Universitário FEI（FEI-SP）和MTG2i Solutions Co.的電機工程系全職教授。他於1984年在巴西聖保羅州的UMC獲得電子工程學士學位。他於1990年在聖保羅大學微電子實驗室（LME/EPUSP）獲得電機工程碩士學位。2004年10月，他獲得微電子學博士學位。他的研究興趣包括新型MOSFET、FinFET、功率器件、基於人工智能的計算工具（iMTGSPICE）和並行數字處理的模擬和優化類比和射頻CMOS集成電路設計。

Egon Henrique Salerno Galembeck是MTG2i Solutions Co.的研究員，研究方向包括類比和射頻CMOS集成電路的設計和優化、惡劣環境下晶體管的電氣特性測試以及MOS器件的三維數值模擬。他於2013年在巴西聖保羅州的Centro Universitário FEI獲得電機工程學士學位。他於2015年9月在Centro Universitário FEI的集成電子器件領域獲得電機工程碩士學位。他於2022年在巴西聖保羅州的Centro Universitário FEI獲得納米電子學和集成器件領域的電機工程博士學位。

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