Analytical Methods and Instruments for Micro- And Nanomaterials
暫譯: 微米與奈米材料的分析方法與儀器

本書描述了廣泛用於表徵納米結構材料的分析儀器。它提供了有關如何評估材料質量、缺陷、表面和界面的狀態、元素分佈、應變、晶格畸變以及材料和設備的電光特性的資訊。本書提供的資訊可作為材料加工、材料設計和設備性能調試的備援。每種分析技術的基本原則和方法論在單獨的章節中進行描述，並添加了歷史視角和近期發展。數據分析從簡單到高級的層次，通過眾多例子介紹，這些例子大多來自作者的研究領域；半導體材料、金屬和氧化物。

本書是材料科學、物理學和工程學領域的科學家和學生的寶貴指南，旨在幫助他們熟悉納米材料最重要的分析技術。

Henry H. Radamson received his M.Sc. degree in physics and his Ph.D. degree in semiconductor materials from Linköping University in Sweden, in 1989 and 1996, respectively. In 1997, he joined the KTH Royal Institute of Technology in Stockholm as a senior scientist. In 2016, he joined the Chinese Academy of Sciences Institute of Microelectronics. Henry Radamson is full professor of optoelectronics and since 2020 he is a member of the European Academy of Sciences. In the same year he became the director of optoelectronics in Guangdong Greater Bay Area Institute of Integrated Circuit and System. He has long time experience in teaching of semiconductor physics and his work in education has been awarded in China. He is author/co-author of several hundreds of scientific articles, several book chapters, and two books. He is a member of the Executive Committee of the European Material Society. His research is focused on nanoelectronics, nanophotonics and nanosensors.

AndersHallén received his M.Sc. degree in electronic engineering 1985 and his PhD degree in ion physics 1990 from Uppsala University, Sweden. He started at The Royal Institute of Technology, KTH, in 1996 to work on silicon carbide material development for power semiconductor applications. His main research area involves material modification using ion beams, focusing on electrical properties of semiconductor materials. Since 2006, he is a professor at the Department of Electronics (KTH). He was also highly involved in the formation of the Ion Technology Centre (ITC) in 2001, a Swedish national platform for the application of ion beams located at Uppsala University and worked as manager for ITC 18 years. He is teaching at undergraduate level in areas of mathematics and physics and, at graduate level, on semiconductor materials, device physics and power semiconductor applications. His publication list includes over 250 articles in international journals, several book chapters and he has given numerous invited talks at international conferences, including several plenary contributions.

Ilya Sychugov received his Master degree in nuclear physics from Moscow Engineering Physics Institute in 2001 and obtained his PhD degree in solid state physics from KTH Royal Institute of Technology, Stockholm in 2007. After Postdoc experience in Japan with Nippon Telegraph, Telephone Basic Research Labs, and National Institute of Material Science, he jointed KTH as an Assistant Professor in 2011, and became an Associate Professor in 2015. His research interests include nanomaterials for light conversion applications and photonic nanostructures. He has co-authored about a hundred of scientific papers and had a dozen of invited talks at international conferences. Ilya Sychugov is involved in teaching of physics courses in all three educational cycles.

Alexander Azarov received his PhD degree with specialization in physics of semiconductors and physicalelectronics from St. Petersburg State Polytechnical University (Russia) in 2005. After that he worked several years as a researcher/process engineer at R&D company "Elar" specializing on the development and fabrication of CCD image sensors. In 2009 Dr. Azarov joined the University of Oslo in Norway after a postdoc position at Royal Institute of Technology, Sweden. Dr. Azarov is an expert in ion beam modification and ion-beam analysis of bulk materials, thin films, and nanostructures. At present the main area of his research activity is application motivated basic research focusing on defects diffusion and phase transformations in ion implanted materials including wide and ultra-wide bandgap semiconductors. Dr. Azarov has an active research collaboration with several research groups worldwide and he is author/co-author of more than 100 scientific papers in peer-reviewed journals.

亨利·H·拉達姆森於1989年和1996年分別在瑞典林雪平大學獲得物理學碩士學位和半導體材料博士學位。1997年，他加入瑞典斯德哥爾摩的KTH皇家技術學院擔任高級科學家。2016年，他加入中國科學院微電子研究所。亨利·拉達姆森是光電學的全職教授，自2020年以來，他是歐洲科學院的成員。同年，他成為廣東大灣區集成電路與系統研究院的光電學主任。他在半導體物理教學方面有著長期的經驗，並因其在教育方面的工作在中國獲得了獎項。他是數百篇科學文章的作者或合著者，還有幾個書章和兩本書。他是歐洲材料學會執行委員會的成員。他的研究專注於納米電子學、納米光子學和納米傳感器。

安德斯·哈倫於1985年獲得瑞典烏普薩拉大學電子工程碩士學位，1990年獲得離子物理博士學位。他於1996年開始在KTH皇家技術學院工作，專注於用於功率半導體應用的碳化矽材料開發。他的主要研究領域涉及使用離子束進行材料改性，重點研究半導體材料的電氣特性。自2006年以來，他是KTH電子系的教授。他還在2001年積極參與了離子技術中心（ITC）的成立，該中心是位於烏普薩拉大學的瑞典國家平台，專注於離子束的應用，並擔任ITC經理18年。他在本科層次教授數學和物理，並在研究生層次教授半導體材料、器件物理和功率半導體應用。他的出版物清單包括250多篇國際期刊文章、幾個書章，並在國際會議上發表了多次受邀演講，包括幾次全體會議貢獻。

伊利亞·西丘戈夫於2001年在莫斯科工程物理學院獲得核物理碩士學位，並於2007年在KTH皇家技術學院獲得固態物理博士學位。在日本的日本電信電話基礎研究所和國立材料科學研究所完成博士後研究後，他於2011年加入KTH擔任助理教授，並於2015年晉升為副教授。他的研究興趣包括用於光轉換應用的納米材料和光子納米結構。他共同撰寫了約一百篇科學論文，並在國際會議上發表了十幾次受邀演講。伊利亞·西丘戈夫參與所有三個教育階段的物理課程教學。

亞歷山大·阿扎羅夫於2005年在聖彼得堡國立理工大學（俄羅斯）獲得專攻半導體物理和物理電子學的博士學位。之後，他在專注於CCD影像感測器的開發和製造的研發公司「Elar」擔任研究員/工藝工程師數年。2009年，阿扎羅夫博士在瑞典皇家技術學院完成博士後研究後，加入挪威奧斯陸大學。阿扎羅夫博士是離子束改性和對大塊材料、薄膜和納米結構進行離子束分析的專家。目前，他的主要研究活動領域是以應用為動機的基礎研究，專注於離子植入材料中的缺陷擴散和相變化，包括寬帶隙和超寬帶隙半導體。阿扎羅夫博士與全球多個研究小組有著活躍的研究合作，他是100多篇同行評審期刊科學論文的作者或合著者。