Fundamentals of Power Semiconductor Devices, 2/e (Paperback)
暫譯: 功率半導體器件基礎，第2版（平裝本）

《功率半導體器件基礎》深入探討了功率半導體器件的運作物理，這些器件在功率電子產業中被廣泛使用。書中展示了解釋所有功率半導體器件運作的分析模型。內容重點放在矽器件上，並包括新興碳化矽器件的獨特特性和設計要求。

Jayant Baliga is an internationally recognized expert on power semiconductor devices. He is a Member of the National Academy of Engineering and a Fellow of the IEEE. He spent 15 years at the General Electric Research and Development Center, Schenectady, NY, leading their power device effort and was bestowed the highest scientific rank of Coolidge Fellow. He joined NCSU in 1988 as a Full Professor and was promoted to the rank of 'Distinguished University Professor' in 1997. Among his many NCSU honors, he was the recepient of the 1998 O. Max Gardner Award given by the North Carolina University Board of Governors to the one person within the 16 constituent universities who has made 'the greatest contribution to the welfare of the human race'; and the 2011 Alexander Quarles Holladay Medal of Excellence, the highest honor at NCSU from the Board of Trustees.

Prof. Baliga has authored/edited 18 books and over 500 scientific articles. He has been granted 120 U.S. Patents. The IEEE has recognized him numerous times - most recently with the 'Lamme Medal' at Whitehall Palace in London. Scientific American magazine included him among the 'Eight Heroes of the Semiconductor Revolution' when commemorating the 50th anniversary of the invention of the transistor.

Prof. Baliga invented, developed and commercialized the Insulated Gate Bipolar Trannsistor (IGBT) at GE. The IGBT is extensively used in the consumer, industrial, lighting, transportation, medical, renewable energy, and other sectors of the economy. It has enabled enormous reduction of gasoline and electrical energy use, resulting in huge cost savings to consumers, and reduction of world-wide carbon dioxide emissions. A detailed report on the applications and social impact of the IGBT is available. He received the National Medal of Technology and Innovation, the highest form of recognition given to an engineer by the United States Government, from President Obama in October 2011, at the White House; and the North Carolina Award for Science from Governor Purdue in October 2012.

Jayant Baliga 是一位國際公認的電力半導體裝置專家。他是美國國家工程院的成員及 IEEE 的院士。他在紐約斯克內克塔迪的通用電氣研究與開發中心工作了 15 年，負責其電力裝置的研究，並獲得了最高的科學榮譽 Coolidge Fellow。他於 1988 年加入北卡羅來納州立大學 (NCSU) 擔任正教授，並於 1997 年晉升為「傑出大學教授」。在 NCSU 的眾多榮譽中，他於 1998 年獲得北卡羅來納大學理事會頒發的 O. Max Gardner 獎，該獎項頒給在 16 所成員大學中對「人類福祉做出最大貢獻」的個人；以及 2011 年獲得的 Alexander Quarles Holladay 卓越獎，這是 NCSU 理事會頒發的最高榮譽。

巴利加教授已撰寫或編輯 18 本書籍及超過 500 篇科學文章。他獲得了 120 項美國專利。IEEE 多次表彰他，最近一次是在倫敦的 Whitehall Palace 頒發的「Lamme Medal」。科學美國人雜誌在慶祝晶體管發明 50 週年時，將他列為「半導體革命的八位英雄」之一。

巴利加教授在通用電氣發明、開發並商業化了絕緣閘雙極型晶體管 (IGBT)。IGBT 廣泛應用於消費、工業、照明、交通、醫療、可再生能源及其他經濟部門。它使汽油和電能的使用大幅減少，為消費者帶來巨大的成本節省，並減少全球二氧化碳排放。關於 IGBT 的應用及社會影響的詳細報告可供查閱。他於 2011 年 10 月在白宮獲得了由奧巴馬總統頒發的國家技術與創新獎，這是美國政府頒發給工程師的最高榮譽；並於 2012 年 10 月獲得北卡羅來納州州長普杜頒發的科學獎。