Resistive RAM and Peripheral Circuitry: An Integrated Circuit Perspective

Reuben, John

  • 出版商: John Reuben
  • 出版日期: 2024-04-09
  • 售價: $2,670
  • 貴賓價: 9.5$2,537
  • 語言: 英文
  • 頁數: 162
  • 裝訂: Quality Paper - also called trade paper
  • ISBN: 3000778489
  • ISBN-13: 9783000778483
  • 海外代購書籍(需單獨結帳)

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商品描述

This book is written as an introductory textbook on Resistive Random Access Memory (ReRAM). ReRAM is a prominent emerging memory among other competing Non-Volatile Memories (NVM) seeking to replace flash memory. This book is based on the author's peer-reviewed research conducted at the Chair of Computer Architecture, FAU, Germany. Referring to his research and the most relevant research from the literature, the author presents the developments in this field concisely. The purpose is to clarify basic concepts and introduce the reader to ReRAM with an emphasis on circuit design. Hence, this book is written for university students considering a career in the semiconductor industry. Since the author's research was conducted in collaboration with a silicon foundry, hardware engineers will find this book practical and industry-relevant. Researchers in the field of In-Memory Computing will also benefit from this book since the NVM array is the basic substrate for such computing paradigms.

This three-part book condenses the research and development of the last decade into eight chapters. In Part I, a good foundation is laid for understanding the individual device structure, its electrical characteristics, and modeling methodology. The different array configurations in which these memory devices are fabricated are also discussed. In Part II, the peripheral circuits -the CMOS circuits around the ReRAM array are discussed. They include sense amplifiers, programming circuits, and row/column access circuits. Recent developments such as the possibility to perform certain computing tasks in the ReRAM array are discussed in Part III.

商品描述(中文翻譯)

這本書是一本關於電阻式隨機存取記憶體(ReRAM)的入門教材。ReRAM是一種備受矚目的新興記憶體,旨在取代快閃記憶體等其他競爭的非揮發性記憶體(NVM)。本書基於作者在德國FAU計算機架構主席的同行評審研究,參考了他的研究以及相關文獻中最具相關性的研究,簡明扼要地介紹了這一領域的發展。其目的是澄清基本概念,並向讀者介紹ReRAM,重點放在電路設計上。因此,這本書是為考慮在半導體行業發展職業生涯的大學生而寫的。由於作者的研究是與矽晶圓廠合作進行的,硬體工程師會發現這本書實用且與業界相關。在記憶計算領域的研究人員也會從這本書中受益,因為NVM陣列是這種計算範式的基本基板。

這本書分為三個部分,將過去十年的研究和發展壓縮成八章。第一部分為理解個別裝置結構、其電氣特性和建模方法奠定了良好的基礎。還討論了這些記憶體裝置製造的不同陣列配置。第二部分討論了周邊電路-圍繞ReRAM陣列的CMOS電路。這些電路包括感測放大器、編程電路和行/列存取電路。第三部分討論了最近的發展,例如在ReRAM陣列中執行某些計算任務的可能性。