In Search of the Next Memory: Inside the Circuitry from the Oldest to the Emerging Non-Volatile Memories
暫譯: 尋找下一代記憶體:從最古老到新興的非揮發性記憶體內部電路解析
- 出版商: Springer
- 出版日期: 2017-03-15
- 售價: $5,640
- 貴賓價: 9.5 折 $5,358
- 語言: 英文
- 頁數: 247
- 裝訂: Hardcover
- ISBN: 3319477226
- ISBN-13: 9783319477220
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商品描述
This book provides students and practicing chip designers with an easy-to-follow yet thorough, introductory treatment of the most promising emerging memories under development in the industry. Focusing on the chip designer rather than the end user, this book offers expanded, up-to-date coverage of emerging memories circuit design. After an introduction on the old solid-state memories and the fundamental limitations soon to be encountered, the working principle and main technology issues of each of the considered technologies (PCRAM, MRAM, FeRAM, ReRAM) are reviewed and a range of topics related to design is explored: the array organization, sensing and writing circuitry, programming algorithms and error correction techniques are reviewed comparing the approach followed and the constraints for each of the technologies considered. Finally the issue of radiation effects on memory devices has been briefly treated. Additionally some considerations are entertained about how emerging memories can find a place in the new memory paradigm required by future electronic systems. This book is an up-to-date and comprehensive introduction for students in courses on memory circuit design or advanced digital courses in VLSI or CMOS circuit design. It also serves as an essential, one-stop resource for academics, researchers and practicing engineers.
商品描述(中文翻譯)
本書為學生和實務中的晶片設計師提供了一個易於理解但又全面的介紹,涵蓋了業界正在開發的最具潛力的新興記憶體。該書專注於晶片設計師而非最終使用者,提供了有關新興記憶體電路設計的擴展和最新的內容。在介紹舊的固態記憶體及其即將面臨的基本限制後,對每種考慮技術(PCRAM、MRAM、FeRAM、ReRAM)的工作原理和主要技術問題進行了回顧,並探討了一系列與設計相關的主題:陣列組織、感測和寫入電路、編程算法和錯誤修正技術,並比較了每種技術所遵循的方法和限制。最後,簡要討論了輻射對記憶體裝置的影響。此外,還考慮了新興記憶體如何在未來電子系統所需的新記憶體範式中找到其位置。本書是針對記憶體電路設計課程或VLSI或CMOS電路設計的高級數位課程的學生的最新和全面的介紹,同時也是學術界、研究人員和實務工程師的重要一站式資源。