Silicon Non-Volatile Memories: Paths of Innovation (Hardcover)
暫譯: 矽非揮發性記憶體:創新之路 (精裝版)

Barbara de Salvo

  • 出版商: Wiley
  • 出版日期: 2009-10-01
  • 定價: $4,980
  • 售價: 9.5$4,731
  • 貴賓價: 9.0$4,482
  • 語言: 英文
  • 頁數: 256
  • 裝訂: Hardcover
  • ISBN: 1848211058
  • ISBN-13: 9781848211056
  • 立即出貨 (庫存 < 3)

商品描述

This book provides a comprehensive overview of the different technological approaches currently being studied to fulfill future memory requirements. Two main research paths are identified and discussed. Different “evolutionary paths” based on new materials and new transistor structures are investigated to extend classical floating gate technology to the 32 nm node. “Disruptive paths” are also covered, addressing 22 nm and smaller IC generations. Finally, the main factors at the origin of these phenomena are identified and analyzed, providing pointers on future research activities and developments in this area.

商品描述(中文翻譯)

本書提供了對目前正在研究的不同技術方法的全面概述,以滿足未來的記憶體需求。識別並討論了兩條主要的研究路徑。基於新材料和新晶體管結構的不同「演進路徑」被探討,以將經典的浮動閘技術擴展到32奈米節點。此外,還涵蓋了「顛覆性路徑」,針對22奈米及更小的集成電路世代。最後,識別並分析了這些現象的主要因素,並提供了未來在該領域的研究活動和發展的指引。

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