Dynamic RAM: Technology Advancements (Hardcover)

Muzaffer A. Siddiqi

  • 出版商: CRC
  • 出版日期: 2012-12-19
  • 售價: $8,250
  • 貴賓價: 9.5$7,838
  • 語言: 英文
  • 頁數: 382
  • 裝訂: Hardcover
  • ISBN: 143989373X
  • ISBN-13: 9781439893739
  • 海外代購書籍(需單獨結帳)

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商品描述

Because of their widespread use in mainframes, PCs, and mobile audio and video devices, DRAMs are being manufactured in ever increasing volume, both in stand-alone and in embedded form as part of a system on chip. Due to the optimum design of their components—access transistor, storage capacitor, and peripherals—DRAMs are the cheapest and densest semiconductor memory currently available. As a result, most of DRAM structure research and development focuses on the technology used for its constituent components and their interconnections. However, only a few books are available on semiconductor memories in general and fewer on DRAMs.

Dynamic RAM: Technology Advancements provides a holistic view of the DRAM technology with a systematic description of the advancements in the field since the 1970s, and an analysis of future challenges.

Topics Include:

  • DRAM cells of all types, including planar, three-dimensional (3-D) trench or stacked, COB or CUB, vertical, and mechanically robust cells using advanced transistors and storage capacitors
  • Advancements in transistor technology for the RCAT, SCAT, FinFET, BT FinFET, Saddle and advanced recess type, and storage capacitor realizations
  • How sub 100 nm trench DRAM technologies and sub 50 nm stacked DRAM technologies and related topics may lead to new research
  • Various types of leakages and power consumption reduction methods in active and sleep mode
  • Various types of SAs and yield enhancement techniques employing ECC and redundancy

A worthwhile addition to semiconductor memory research, academicians and researchers interested in the design and optimization of high-density and cost-efficient DRAMs may also find it useful as part of a graduate-level course.

商品描述(中文翻譯)

由於在大型主機、個人電腦及行動音視頻設備中的廣泛應用,DRAM 的生產量不斷增加,無論是獨立型還是嵌入式形式作為系統單晶片的一部分。由於其組件—存取晶體管、儲存電容器及周邊設備—的最佳設計,DRAM 目前是最便宜且密度最高的半導體記憶體。因此,大多數 DRAM 結構的研究與開發都集中在其組成元件及其互連技術上。然而,關於半導體記憶體的一般書籍不多,而專門針對 DRAM 的書籍更是稀少。

《動態隨機存取記憶體:技術進展》提供了 DRAM 技術的整體觀點,系統性地描述了自 1970 年代以來該領域的進展,以及對未來挑戰的分析。

主題包括:
- 各類型的 DRAM 單元,包括平面、三維(3-D)溝槽或堆疊、COB 或 CUB、垂直及使用先進晶體管和儲存電容器的機械穩健型單元
- 用於 RCAT、SCAT、FinFET、BT FinFET、鞍型及先進凹槽型的晶體管技術進展,以及儲存電容器的實現
- 如何利用小於 100 nm 的溝槽 DRAM 技術和小於 50 nm 的堆疊 DRAM 技術及相關主題來引領新的研究
- 在活動模式和睡眠模式下各類型的漏電及降低功耗的方法
- 各類型的 SAs 及利用 ECC 和冗餘的產量提升技術

這本書對於半導體記憶體研究是一個值得的補充,對於有興趣於高密度和成本效益 DRAM 設計與優化的學者和研究人員來說,也可能作為研究生課程的一部分而具有實用價值。