Integrated Power Devices and TCAD Simulation (Hardcover)

Yue Fu, Zhanming Li, Wai Tung Ng, Johnny K.O. Sin

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商品描述

From power electronics to power integrated circuits (PICs), smart power technologies, devices, and beyond, Integrated Power Devices and TCAD Simulation provides a complete picture of the power management and semiconductor industry. An essential reference for power device engineering students and professionals, the book not only describes the physics inside integrated power semiconductor devices such lateral double-diffused metal oxide semiconductor field-effect transistors (LDMOSFETs), lateral insulated-gate bipolar transistors (LIGBTs), and super junction LDMOSFETs but also delivers a simple introduction to power management systems.

Instead of abstract theoretical treatments and daunting equations, the text uses technology computer-aided design (TCAD) simulation examples to explain the design of integrated power semiconductor devices. It also explores next generation power devices such as gallium nitride power high electron mobility transistors (GaN power HEMTs).

Including a virtual process flow for smart PIC technology as well as a hard-to-find technology development organization chart, Integrated Power Devices and TCAD Simulation gives students and junior engineers a head start in the field of power semiconductor devices while helping to fill the gap between power device engineering and power management systems.

商品描述(中文翻譯)

從電力電子學到電力集成電路(PICs)、智慧電力技術、裝置及其他,《集成電力裝置與TCAD模擬》提供了電力管理和半導體產業的完整圖景。這本書是電力裝置工程學生和專業人士的重要參考資料,不僅描述了集成電力半導體裝置內部的物理原理,如橫向雙擴散金屬氧化物半導體場效應電晶體(LDMOSFETs)、橫向絕緣閘雙極電晶體(LIGBTs)和超結LDMOSFETs,還簡單介紹了電力管理系統。

本書並未採用抽象的理論處理和艱深的方程式,而是利用技術計算機輔助設計(TCAD)模擬範例來解釋集成電力半導體裝置的設計。它還探討了下一代電力裝置,如氮化鎵高電子遷移率電晶體(GaN power HEMTs)。

《集成電力裝置與TCAD模擬》包括智慧PIC技術的虛擬流程以及難以找到的技術開發組織圖,為學生和初級工程師在電力半導體裝置領域提供了優勢,同時幫助填補電力裝置工程與電力管理系統之間的空白。