商品描述
Space applications, nuclear physics, military operations, medical imaging, and especially electronics (modern silicon processing) are obvious fields in which radiation damage can have serious consequences, i.e., degradation of MOS devices and circuits. Zeroing in on vital aspects of this broad and complex topic, Radiation Effects in Semiconductors addresses the ever-growing need for a clear understanding of radiation effects on semiconductor devices and circuits to combat potential damage it can cause.
Features a chapter authored by renowned radiation authority Lawrence T. Clark on Radiation Hardened by Design SRAM Strategies for TID and SEE Mitigation
This book analyzes the radiation problem, focusing on the most important aspects required for comprehending the degrading effects observed in semiconductor devices, circuits, and systems when they are irradiated. It explores how radiation interacts with solid materials, providing a detailed analysis of three ways this occurs: Photoelectric effect, Compton effect, and creation of electron-positron pairs. The author explains that the probability of these three effects occurring depends on the energy of the incident photon and the atomic number of the target. The book also discusses the effects that photons can have on matter—in terms of ionization effects and nuclear displacement
Aimed at post-graduate researchers, semiconductor engineers, and nuclear and space engineers with some electronics background, this carefully constructed reference explains how ionizing radiation is creating damage in semiconducting devices and circuits and systems—and how that damage can be avoided in areas such as military/space missions, nuclear applications, plasma damage, and X-ray-based techniques. It features top-notch international experts in industry and academia who address emerging detector technologies, circuit design techniques, new materials, and innovative system approaches. This book is a must-read for anyone serious about understanding radiation effects in the electronics industry.
商品描述(中文翻譯)
太空應用、核物理、軍事作戰、醫學影像，尤其是電子學（現代矽處理）都是輻射損傷可能造成嚴重後果的明顯領域，即 MOS 裝置和電路的退化。針對這個廣泛而複雜主題的關鍵方面，《半導體中的輻射效應》探討了對半導體裝置和電路輻射效應的清晰理解日益增長的需求，以應對可能造成的損害。
本書包含著名輻射權威 Lawrence T. Clark 撰寫的章節，主題為 設計輻射抗擾的 SRAM 策略以減輕 TID 和 SEE
本書分析了輻射問題，重點關注理解半導體裝置、電路和系統在受到輻射照射時所觀察到的退化效應所需的最重要方面。它探討了輻射如何與固體材料相互作用，詳細分析了三種發生方式：光電效應、康普頓效應和電子-正電子對的產生。作者解釋了這三種效應發生的概率取決於入射光子的能量和目標的原子序數。本書還討論了光子對物質的影響——在電離效應和核位移方面。
本書針對具有一定電子學背景的研究生研究人員、半導體工程師以及核能和太空工程師，這本精心構建的參考書解釋了電離輻射如何在半導體裝置和電路及系統中造成損害，以及如何在軍事/太空任務、核應用、等離子體損傷和基於 X 射線的技術等領域避免這種損害。書中匯聚了來自業界和學術界的頂尖國際專家，探討新興的探測器技術、電路設計技術、新材料和創新的系統方法。這本書是任何對理解電子產業中的輻射效應認真者的必讀之作。
