High Performance Memory Testing: Design Principles, Fault Modeling and Self-Test
暫譯: 高效能記憶體測試:設計原則、故障模型與自我測試

R. Dean Adams

  • 出版商: Kluwer Academic Publ
  • 出版日期: 2002-09-30
  • 售價: $6,890
  • 貴賓價: 9.5$6,546
  • 語言: 英文
  • 頁數: 250
  • 裝訂: Hardcover
  • ISBN: 1402072554
  • ISBN-13: 9781402072550
  • 海外代購書籍(需單獨結帳)

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商品描述

Design and test are considered jointly in this book since knowledge of one without the other is insufficient for the task of having high quality memories. Knowledge of memory design is required to understand test. An understanding of test is required to have effective built-in self-test implementations. A poor job can be done on any of these pieces resulting in a memory that passes test but which is not actually good. The relentless press of Moore's law drives more and more bits onto a single chip. The large number of bits means that methods that were "gotten away with" in the past will no longer be sufficient. Because the number of bits is so large, fine nuances of fails that were rarely seen previously now will happen regularly on most chips. These subtle fails must be caught or else quality will suffer severely.

Are memory applications more critical than they have been in the past? Yes, but even more critical is the number of designs and the sheer number of bits on each design. It is assured that catastrophes, which were avoided in the past because memories were small, will easily occur if the design and test engineers do not do their jobs very carefully.

High Performance Memory Testing: Design Principles, Fault Modeling and Self Test is based on the author's 20 years of experience in memory design, memory reliability development and memory self test.

High Performance Memory Testing: Design Principles, Fault Modeling and Self Test is written for the professional and the researcher to help them understand the memories that are being tested.

Contents

Preface. Section I: Design & Test of Memories. 1. Opening Pandora's Box. 2. Static Random Access Memories. 3. Multi-Port Memories. 4. Silicon On Insulator Memories. 5. Content Addressable Memories. 6. Dynamic Random Access Memories. 7. Non-Volatile Memories. Testing II: Memory Testing. 8. Memory Faults. 9. Memory Patterns. Section III: Memory Self Test. 10. BIST Concepts. 11. State Machine BIST. 12. Micro-Code BIST. 13. BIST and Redundancy. 14. Design For Test and BIST. 15. Conclusions. Appendices. Appendix A. Further Memory Fault Modeling. Appendix B. Further Memory Test Patterns. Appendix C. State Machine HDL. References. Glossary/Acronyms. Index. About the Author.

商品描述(中文翻譯)

設計與測試在本書中被視為共同的主題,因為僅了解其中一個而不理解另一個,對於實現高品質記憶體的任務來說是不夠的。了解記憶體設計是理解測試所必需的,而理解測試則是有效實現內建自我測試的必要條件。任何一個環節的疏忽都可能導致記憶體通過測試,但實際上卻不良好。摩爾定律的持續推動使得越來越多的位元被集成到單一晶片上。位元的數量龐大意味著過去可以「逃避」的某些方法將不再足夠。由於位元數量如此之多,以前很少見的微妙故障現在在大多數晶片上將會經常發生。這些微妙的故障必須被捕捉,否則品質將會受到嚴重影響。

記憶體應用是否比過去更為關鍵?是的,但更關鍵的是設計的數量以及每個設計上的位元數量。可以確定的是,過去因為記憶體較小而避免的災難,如果設計和測試工程師不非常仔細地執行他們的工作,將會輕易發生。

《高效能記憶體測試:設計原則、故障建模與自我測試》基於作者在記憶體設計、記憶體可靠性開發和記憶體自我測試方面的20年經驗而撰寫。

《高效能記憶體測試:設計原則、故障建模與自我測試》是為專業人士和研究人員撰寫的,旨在幫助他們理解正在測試的記憶體。

目錄
前言。第一部分:記憶體的設計與測試。1. 打開潘多拉的盒子。2. 靜態隨機存取記憶體。3. 多埠記憶體。4. 矽上絕緣體記憶體。5. 內容可尋址記憶體。6. 動態隨機存取記憶體。7. 非揮發性記憶體。測試 II:記憶體測試。8. 記憶體故障。9. 記憶體模式。第三部分:記憶體自我測試。10. BIST 概念。11. 狀態機 BIST。12. 微碼 BIST。13. BIST 與冗餘。14. 設計以便測試與 BIST。15. 結論。附錄。附錄 A. 進一步的記憶體故障建模。附錄 B. 進一步的記憶體測試模式。附錄 C. 狀態機 HDL。參考文獻。術語表/縮寫詞。索引。關於作者。