Solid State Electronic Devices, 7/e (GE-Paperback)

Ben Streetman , Sanjay Banerjee

Solid State Electronic Devices, 7/e (GE-Paperback)

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商品描述

  • For undergraduate electrical engineering students or for practicing engineers and scientists interested in updating their understanding of modern electronics

    One of the most widely used introductory books on semiconductor materials, physics, devices and technology, Solid State Electronic Devices aims to: 1) develop basic semiconductor physics concepts, so students can better understand current and future devices; and 2) provide a sound understanding of current semiconductor devices and technology, so that their applications to electronic and optoelectronic circuits and systems can be appreciated. Students are brought to a level of understanding that will enable them to read much of the current literature on new devices and applications.

    Teaching and Learning Experience
    This program will provide a better teaching and learning experience–for you and your students. It will help:
    • Provide a Sound Understanding of Current Semiconductor Devices: With this background, students will be able to see how their applications to electronic and optoelectronic circuits and systems are meaningful.
    • Incorporate the Basics of Semiconductor Materials and Conduction Processes in Solids: Most of the commonly used semiconductor terms and concepts are introduced and related to a broad range of devices.
    • Develop Basic Semiconductor Physics Concepts: With this background, students will be better able to understand current and future devices.
    • Provide a Sound Understanding of Current Semiconductor Devices
      The authors have chosen devices to discuss that are broadly illustrative of important principles at the undergraduate level.
      • The basics of semiconductor materials and conduction processes in solids are incorporated to understand p-n junctions, bipolar and metal oxide semiconductor transistors, optoelectronic and other devices.
      • A discussion of device fabrication processes and CMOS integrated circuit technology, along with data in the Appendices, provide a useful understanding of how semiconductor devices are made.
      • The extensive discussion of circuit and other application examples provides students with feedback about the practical relevance of the theory.
      • UPDATED: The discussion of MOS devices is updated, both in the underlying theory of ballistic FETs as well as discussion of advanced MOSFETs such as FinFETs, strained Si devices, metal gate/ high-k devices, III-V high channel mobility devices.
      • UPDATED: The treatment of optoelectronic devices is updated, including high bandgap nitride semiconductors and quantum cascade lasers
      • NEW: A brand new section on nanoelectronics introduces students to exciting concepts such as 2D materials including graphene and topological insulators, 1D nanowires and nanotubes, and 0D quantum dots.
      • NEW: A new discussion highlights spintronics and novel resistive and phase change memories.
      Incorporate the Basics of Semiconductor Materials and Conduction Processes in Solids
      All of the devices covered are important in today’s electronics; furthermore, learning about these devices should be an enjoyable and rewarding experience.
      • The first four chapters of the book provide background on the nature of semiconductors and conduction processes in solids.
      • Included is a brief introduction to quantum concepts (Chapter 2) for those students who do not already have this background from other courses.
      • Chapter 5 describes the p-n junction and some of its applications.
      • Chapters 6 and 7 deal with the principles of transistor operation.
      • Chapter 8 covers optoelectronics and Chapter 9 discusses integrated circuits.
      • Chapter 10 applies the theory of junctions and conduction processes to microwave and power devices.
      Develop Basic Semiconductor Physics Concepts
      • NEW: This edition features about 100 new problems and updated references that extend concepts in the text.
      • Reading Lists: As a further aid in developing techniques for independent study, the reading list at the end of each chapter includes a few articles which students can read as they study this book. Some exposure to periodicals is useful in laying the foundation for a career of constant updating and self-education. A summary of the key concepts is included at the end of each chapter.
      • Problems: One of the keys to success in understanding this material is to work problems that exercise the concepts. The problems at the end of each chapter are designed to facilitate learning the material. Very few are simple “plug-in” problems. Instead, they are chosen to reinforce or extend the material presented in the chapter. In addition, “self quiz” problems test students’ conceptual understanding.
      • Key Equations: A listing of the key equations for semiconductor devices on the inside covers of the book is arranged thematically to help students digest the concepts.
      • Units: Examples and problems are stated in terms of units commonly used in the semiconductor literature. The basic system of units is rationalized MKS, although cm is often used as a convenient unit of length. Similarly, electron volts (eV) are often used rather than joules (J) to measure the energy of electrons. Units for various quantities are given in Appendices I and II.

      New to this edition
      Provide a Sound Understanding of Current Semiconductor Devices
      The authors have chosen devices to discuss that are broadly illustrative of important principles at the undergraduate level.
      • The discussion of MOS devices is updated, both in the underlying theory of ballistic FETs as well as discussion of advanced MOSFETs such as FinFETs, strained Si devices, metal gate/ high-k devices, III-V high channel mobility devices.
      • The treatment of optoelectronic devices is updated, including high bandgap nitride semiconductors and quantum cascade lasers
      • A brand new section on nanoelectronics introduces students to exciting concepts such as 2D materials including graphene and topological insulators, 1D nanowires and nanotubes, and 0D quantum dots.
      • A new discussion highlights spintronics and novel resistive and phase change memories.
      Develop Basic Semiconductor Physics Concepts
      • This edition features about 100 new problems and updated references that extend concepts in the text.

商品描述(中文翻譯)

《固態電子元件》是一本廣泛使用的半導體材料、物理、元件和技術的入門書籍，適用於本科電氣工程學生、從業工程師和科學家，以及希望更新對現代電子學的理解的人。本書的目標是：1）發展基本的半導體物理概念，使學生能更好地理解當前和未來的元件；2）提供對當前半導體元件和技術的深入理解，以便能夠欣賞它們在電子和光電路和系統中的應用。本書將使學生達到一個能夠讓他們閱讀許多關於新元件和應用的當前文獻的理解水平。

本書的教學和學習體驗將為您和您的學生提供更好的教學和學習體驗。它將有助於：
- 提供對當前半導體元件的深入理解：有了這個背景，學生將能夠看到它們在電子和光電路和系統中的應用的意義。
- 將半導體材料和固體導電過程的基礎納入其中：介紹了大部分常用的半導體術語和概念，並與各種設備相關聯。
- 發展基本的半導體物理概念：有了這個背景，學生將更好地理解當前和未來的元件。
- 提供對當前半導體元件的深入理解：作者選擇了一些在本科水平上具有廣泛示例意義的設備。
- 更新：更新了有關MOS設備的討論，包括彈道場效應晶體管的基礎理論以及FinFETs、應變硅設備、金屬閘/高介電設備、III-V高通道遷移率設備等先進MOSFETs的討論。
- 更新：更新了光電設備的處理，包括高能隙氮化物半導體和量子級聯激光器。
- 新增：全新的納米電子學部分介紹了令人興奮的概念，如二維材料（包括石墨烯和拓撲絕緣體）、一維納米線和納米管以及零維量子點。
- 新增：新增的討論突出了自旋電子學和新型電阻性和相變記憶體。

所有涉及的設備在當今的電子學中都很重要；此外，學習這些設備應該是一個有趣和有益的經歷。
- 本書的前四章介紹了半導體的性質和固體導電過程的背景。
- 其中包括對量子概念的簡要介紹（第2章），供那些在其他課程中沒有這方面背景的學生參考。
- 第5章描述了p-n結和它的一些應用。
- 第6章和第7章介紹了晶體管的原理。

作者簡介

Ben Streetman, University of Texas, Austin
Sanjay Banerjee, University of Texas, Austin

作者簡介(中文翻譯)

Ben Streetman，德克薩斯大學奧斯汀分校
Sanjay Banerjee，德克薩斯大學奧斯汀分校

目錄大綱

1. Crystal Properties and Growth of Semiconductors
2. Atoms and Electrons
3. Energy Bands and Charge Carriers in Semiconductors
4. Excess Carriers in Semiconductors
5. Junctions
6. Field-Effect Transistors
7. Bipolar Junction Transistors
8. Optoelectronic Devices
9. Integrated Circuits
10. High-Frequency, High-Power and Nanoelectronic Devices

Appendices
I. Definitions of Commonly Used Symbols
II. Physical Constants and Conversion Factors
III. Properties of Semiconductor Materials
IV. Derivation of the Density of States in the Conduction Band
V. Derivation of Fermi-Dirac Statistics
VI. Dry and Wet Thermal Oxide Thickness Grown on Si (100) as a function of Time and Temperature
VII. Solid Solubilities of Impurities in Si
VIII. Diffusivities of Dopants in Si and SiO2
IX. Projected Range and Straggle as Function of Implant Energy in Si

目錄大綱(中文翻譯)

1. 半導體的晶體特性和生長
2. 原子和電子
3. 半導體的能帶和載流子
4. 半導體中的過剩載流子
5. 聯接
6. 場效應電晶體
7. 雙極接面電晶體
8. 光電子器件
9. 集成電路
10. 高頻、高功率和納米電子器件

附錄
I. 常用符號的定義
II. 物理常數和換算因子
III. 半導體材料的特性
IV. 導帶中態密度的推導
V. Fermi-Dirac 統計的推導
VI. Si (100) 上乾燥和濕氧化層的厚度隨時間和溫度的變化
VII. Si 中雜質的固溶度
VIII. Si 和 SiO2 中摻雜物的擴散率
IX. 在 Si 中，投射範圍和偏差隨注入能量的變化

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