Gallium Nitride (Gan): Physics, Devices, and Technology (氮化鎵（GaN）：物理、器件與技術)

Medjdoub, Farid

Gallium Nitride (Gan): Physics, Devices, and Technology

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商品描述

Addresses a Growing Need for High-Power and High-Frequency Transistors

 

Gallium Nitride (GaN): Physics, Devices, and Technology offers a balanced perspective on the state of the art in gallium nitride technology. A semiconductor commonly used in bright light-emitting diodes, GaN can serve as a great alternative to existing devices used in microelectronics. It has a wide band gap and high electron mobility that gives it special properties for applications in optoelectronic, high-power, and high-frequency devices, and because of its high off-state breakdown strength combined with excellent on-state channel conductivity, GaN is an ideal candidate for switching power transistors.

 

Explores Recent Progress in High-Frequency GaN Technology

 

Written by a panel of academic and industry experts from around the globe, this book reviews the advantages of GaN-based material systems suitable for high-frequency, high-power applications. It provides an overview of the semiconductor environment, outlines the fundamental device physics of GaN, and describes GaN materials and device structures that are needed for the next stage of microelectronics and optoelectronics. The book details the development of radio frequency (RF) semiconductor devices and circuits, considers the current challenges that the industry now faces, and examines future trends.

 

In addition, the authors:

 

 

 

  • Propose a design in which multiple LED stacks can be connected in a series using interband tunnel junction (TJ) interconnects
  • Examine GaN technology while in its early stages of high-volume deployment in commercial and military products
  • Consider the potential use of both sunlight and hydrogen as promising and prominent energy sources for this technology
  • Introduce two unique methods, PEC oxidation and vapor cooling condensation methods, for the deposition of high-quality oxide layers

 

A single-source reference for students and professionals, Gallium Nitride (GaN): Physics, Devices, and Technology provides an overall assessment of the semiconductor environment, discusses the potential use of GaN-based technology for RF semiconductor devices, and highlights the current and emerging applications of GaN.

商品描述(中文翻譯)

「應對高功率和高頻率晶體管需求的增長」

「氮化鎵（GaN）：物理、器件和技術」提供了對氮化鎵技術的最新狀態的平衡觀點。氮化鎵是一種常用於明亮發光二極管的半導體，可作為微電子中現有器件的理想替代品。它具有寬帶隙和高電子遷移率，具有特殊的光電、高功率和高頻率器件應用特性。由於其高關機擊穿強度和優異的通道導電性，氮化鎵是開關功率晶體管的理想候選材料。

「探索高頻率氮化鎵技術的最新進展」

本書由來自世界各地的學術和工業專家組成的團隊撰寫，回顧了適用於高頻率、高功率應用的基於氮化鎵材料系統的優勢。它概述了半導體環境，概述了氮化鎵的基本器件物理，並描述了微電子和光電子的下一階段所需的氮化鎵材料和器件結構。本書詳細介紹了射頻（RF）半導體器件和電路的發展，考慮了行業目前面臨的挑戰，並探討了未來的趨勢。

此外，作者還：

- 提出了一種設計，可以使用帶間隙隧道接合（TJ）互連將多個LED堆疊連接成串
- 在商業和軍事產品的大規模部署初期，研究了氮化鎵技術
- 考慮了太陽能和氫能作為這項技術的有前途和重要能源的潛在使用
- 引入了兩種獨特的方法，PEC氧化和蒸汽冷凝法，用於高質量氧化物層的沉積

作為學生和專業人士的單一來源參考資料，《氮化鎵（GaN）：物理、器件和技術》提供了對半導體環境的整體評估，討論了GaN技術在射頻半導體器件中的潛在應用，並突出了GaN的當前和新興應用。

作者簡介

Farid Medjdoub is a CNRS senior scientist at IEMN in France. He earned his Ph.D in electrical engineering from the University of Lille in 2004, and worked as a research associate at the University of Ulm in Germany before joining IMEC. Medjdoub's research interests include the design, fabrication, and characterization of innovative GaN-based devices. He is the author and co-author of more than 100 articles, and holds several patents deriving from his research. In addition, he serves as a reviewer for IEEE journals, is a TPC member in several conferences, and is part of the French observatory of wide-bandgap devices.

 

Krzysztof (Kris) Iniewski manages R&D at Redlen Technologies, Inc., Vancouver, Canada. He is also the president of CMOS Emerging Technologies Research, Inc. (www.cmosetr.com). Iniewski has held numerous faculty and management positions at the University of Toronto, University of Alberta, SFU, and PMC-Sierra, Inc. He has written and edited several books for numerous publications including CRC Press, published more than 100 articles in international journals and conferences, and holds numerous international patents. He is also a frequent invited speaker and has consulted for multiple organizations internationally. His personal goal is to contribute to healthy living and sustainability through innovative engineering solutions.

作者簡介(中文翻譯)

Farid Medjdoub是法國IEMN的CNRS高級科學家。他於2004年在里爾大學獲得電氣工程博士學位，並在加入IMEC之前在德國烏爾姆大學擔任研究助理。Medjdoub的研究興趣包括創新GaN基礎器件的設計、製造和特性測試。他是100多篇文章的作者和合著者，並擁有多項與其研究相關的專利。此外，他還擔任IEEE期刊的審稿人，是多個會議的技術節目委員會成員，並且是法國寬能隙器件觀測站的一部分。

Krzysztof (Kris) Iniewski在加拿大溫哥華的Redlen Technologies, Inc.擔任研發部門的管理職位。他還是CMOS Emerging Technologies Research, Inc. (www.cmosetr.com)的總裁。Iniewski曾在多倫多大學、阿爾伯塔大學、SFU和PMC-Sierra, Inc.擔任多個教職和管理職位。他為多個出版物撰寫和編輯了幾本書籍，在國際期刊和會議上發表了100多篇文章，並擁有多項國際專利。他還經常受邀演講，並為多個國際組織提供諮詢服務。他的個人目標是通過創新的工程解決方案為健康生活和可持續發展做出貢獻。

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